Abstract: In various aspects, the present disclosure relates to device structures and a method of forming such a device structure. In some illustrative embodiments herein, a device is provided, including a semiconductor substrate having a first trench formed therein, and a first trench isolation structure formed in the first trench. The first trench isolation structure includes first and second insulating liners formed adjacent inner surfaces of the first trench, wherein the first insulating liner is in direct contact with inner surfaces of the first trench and the second insulating liner is formed directly on the first insulating liner, and a first insulating filling material which at least partially fills the first trench. In some aspects, a thickness of the first insulating liner is greater than a thickness of the second insulating liner.

Abstract: In semiconductor devices, some active regions may frequently have to be formed on the basis of a silicon/germanium (Si/Ge) mixture in order to appropriately adjust transistor characteristics, for instance, for P-type transistors. To this end, the present disclosure provides manufacturing techniques and respective devices in which at least two different types of active regions, including Si/Ge material, may be provided with a high degree of compatibility with conventional process strategies. Due to the provision of different germanium concentrations, increased flexibility in adjusting characteristics of transistor elements that require Si/Ge material in their active regions may be achieved.

Abstract: A semiconductor device includes a first transistor element having a first channel region and a second transistor element having a second channel region, wherein the first channel region includes a first crystalline silicon/germanium (Si/Ge) material mixture having a first germanium concentration, and wherein the second channel region includes a second crystalline Si/Ge material mixture having a second germanium concentration that is higher than the first germanium concentration.

Abstract: A method for producing a twist drill has the following steps. A blank is shaped to form a semi-finished product. The semi-finished product is formed from a core, coaxial with the drill axis, having a radius and a number of webs, arranged on the core, having a height. The semi-finished product has a constant cross section along the drill axis. The webs have a first portion which adjoins the core and in which a width of the web remains constant or decreases in the circumferential direction with increasing radial distance from the drill axis. The webs have a second portion which adjoins the first portion and in which the width of the web increases in the circumferential direction with increasing radial distance from the drill axis. The webs of the semi-finished product are shaped into helical segments using a plurality of rolling tools that annularly enclose the semi-finished product and roll on the webs along the drill axis. The rolling tools have teeth that are inclined with respect to the drill axis.

Abstract: The twist drill (1) has a drilling head (3), a continuous two-flute, three-flute to six-flute helix (4) and an insertion end (5) that are arranged consecutively on a drill axis (2). The helix (4) has a radial outer dimension (18) that varies periodically two, three to six times per revolution around the drill axis (2). The invention also relates to a production method for such a drill.

Abstract: The present invention relates to lipase variants and methods of obtaining them. The present invention also relates to polynucleotides encoding the variants; nucleic acid constructs, vectors, and host cells comprising the polynucleotides; and methods of using the variants.

Abstract: A method for producing a drill includes cold forming of a rod-shaped blank to form a semifinished product having three or more rectilinear longitudinal ribs extending along a longitudinal axis of the semifinished product, introducing the longitudinal ribs into a first die and a second die in a working direction, where the first die bears against the longitudinal ribs in a direction of rotation about the longitudinal axis and the second die bears against the longitudinal ribs counter to the direction of rotation, pivoting the first die in the direction of rotation in relation to the second die in order to twist the longitudinal ribs between the first and second dies, pulling the longitudinal ribs 31 through the pivoted first die and the second die counter to the working direction in order to twist the longitudinal ribs and apply a drill head to the rear end in the working direction.

Abstract: A control method for a bore-chiseling portable power tool for machining a substrate by a drill bit includes superimposing a periodic striking on the drill bit at an impact rate and a rotating of the tool holder at a rotational speed in a rotational direction, identifying a material of the substrate being machined by the drill bit by a sensor, adjusting the rotational speed and/or the rotational direction to a first rotational speed and a first rotational direction when the identified material is an iron-based material, and adjusting the rotational speed and/or the rotational direction to a second rotational speed and a second rotational direction when the identified material is a mineral material. The first rotational speed is less than the second rotational speed and the first rotational direction is counter-clockwise and the second rotational direction is clockwise.

Abstract: The present invention relates to lipase variants and methods of obtaining them. The present invention also relates to polynucleotides encoding the variants; nucleic acid constructs, vectors, and host cells comprising the polynucleotides; and methods of using the variants.

Abstract: A drill bit has, along a drill bit axis, a drilling head, a multi-start helix made of two or more helical coils, and an insertion end. The helix has a helix slope and a pitch in a delivery region. In an outlet region of the helix, the outlet region being directed towards the insertion end, the helical coils merge continuously, within a first portion, from an orientation in alignment with the helix slope into an orientation parallel to the drill bit axis. A length of the first portion is at least one quarter of the pitch of the delivery region. The helical coils, in a second portion, are oriented parallel to the drill bit axis.

Abstract: The present invention relates to an isothermal method for detecting in a sample a target nucleic acid strand.

Abstract: A method for producing a twist drill has the following steps. A blank is shaped to form a semi-finished product. The semi-finished product is formed from a core, coaxial with the drill axis, having a radius and a number of webs, arranged on the core, having a height. The semi-finished product has a constant cross section along the drill axis. The webs have a first portion which adjoins the core and in which a width of the web remains constant or decreases in the circumferential direction with increasing radial distance from the drill axis. The webs have a second portion which adjoins the first portion and in which the width of the web increases in the circumferential direction with increasing radial distance from the drill axis. The webs of the semi-finished product are shaped into helical segments using a plurality of rolling tools that annularly enclose the semi-finished product and roll on the webs along the drill axis. The rolling tools have teeth that are inclined with respect to the drill axis.

Abstract: The present invention relates to lipase variants and methods of obtaining them. The present invention also relates to polynucleotides encoding the variants; nucleic acid constructs, vectors, and host cells comprising the polynucleotides; and methods of using the variants.

Abstract: Methods and compositions for treating textiles and hard surfaces with compositions having specific lipases are described. The compositions have increased stability to oxidative degradation in particular due to bleach catalysts.

Abstract: The present invention relates to lipase variants and methods of obtaining them. The present invention also relates to polynucleotides encoding the variants; nucleic acid constructs, vectors, and host cells comprising the polynucleotides; and methods of using the variants.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a metal contact structure, an electrically conductive capping layer formed on the metal contact structure, and a conductive via electrically connected to the metal contact structure through the electrically conductive capping layer.

Abstract: The twist drill (1) has a drilling head (3), a continuous two-flute, three-flute to six-flute helix (4) and an insertion end (5) that are arranged consecutively on a drill axis (2). The helix (4) has a radial outer dimension (18) that varies periodically two, three to six times per revolution around the drill axis (2). The invention also relates to a production method for such a drill.

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes densifying an upper-surface portion of an ILD layer of dielectric material that overlies a metallization layer above a semiconductor substrate to form a densified surface layer of dielectric material. The densified surface layer and the ILD layer are etched through to expose a metal line of the metallization layer.

Abstract: The present invention provides a method for making a large nucleic acid having a defined sequence in vivo. The method combines recombineering techniques with a CRISPR/Cas system to permit multiple insertions of defined sequences into a target nucleic acid at one time, double stranded cleavage of target nucleic acids in which the defined sequences were not successfully inserted, and selection of successful recombinant cells. The method further includes repeating the process one or more times, using a successful recombinant from one round as the host cell for the next round.

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes densifying an upper-surface portion of an ILD layer of dielectric material that overlies a metallization layer above a semiconductor substrate to form a densified surface layer of dielectric material. The densified surface layer and the ILD layer are etched through to expose a metal line of the metallization layer.