Abstract: The present invention provides a technique for forming differently stressed contact etch stop layers, wherein sidewall spacers are removed prior to the formation of the contact etch stop layers. During the partial removal of respective contact etch stop layers, a corresponding etch stop layer regime is used to substantially avoid any unwanted stress-inducing material residuals, thereby significantly enhancing the stress transfer mechanism.

Abstract: By removing excess material of an interlayer dielectric material deposited by SACVD, the gap filling capabilities of this deposition technique may be exploited, while, on the other hand, negative effects of this material may be reduced. In other aspects, a buffer material, such as silicon dioxide, may be formed prior to depositing the interlayer dielectric material on the basis of SACVD, thereby creating enhanced uniformity during the deposition process when depositing the interlayer dielectric material on dielectric layers having different high intrinsic stress levels. Consequently, the reliability of the interlayer dielectric material may be enhanced while nevertheless maintaining the advantages provided by an SACVD deposition.

Abstract: A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. A first glue layer and a second glue layer are formed over the recess. The first glue layer comprises titanium and the second glue layer comprises tungsten nitride. The recess is filled with a material comprising tungsten.

Abstract: The use of a metathesis catalyst in the preparation of a functionalized sphingolipid.

Abstract: The invention provides for polynucleotides and vectors comprising at least two tag sequences. The invention also provides for polynucleotides and vectors comprising a streptavidin binding peptide sequence and a calmodulin binding peptide sequence. The invention also provides for polynucleotides and vectors wherein a gene of interest is fused in frame to at least two tag sequences, for example, a streptavidin binding peptide sequence and a calmodulin binding peptide sequence. The invention also provides for the chimeric proteins encoded by these polynucleotides. The invention also provides for methods of using the polynucleotides of the invention for detecting and/isolating protein complexes or identifying a binding partner for a protein of interest.

Abstract: By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.

Abstract: By providing a safety material, such as an adhesive foil, the probability for transport-related damage or destruction of substrates caused by broken substrates may be significantly reduced.

Abstract: By providing a surface modification process prior to or during a self-limiting deposition process, the per se highly conformal deposition behavior may be selectively changed so as to obtain reliable coverage at specific surface areas, while significantly reducing or suppressing a deposition above unwanted surface areas, such as the bottom of a via in advanced metallization structures of highly scaled semiconductor devices.

Abstract: Analogues of the amino acid sequence KAPREKY and their use in screening for compounds which interacts with Fc?RI?.

Abstract: The present invention provides methods, kits and compositions for the detection of an analyte. The invention is particularly suited for the detection and quantification of analytes in solution. In the methods of the invention a complex is formed between two or more analyte specific probes (ASP) and an analyte. The reactive moieties of the probes interact upon the binding of the analyte specific probes to the analyte. The reactive moieties generate a nucleic acid cleavage product which is detected and indicative of the presence of the analyte.

Abstract: The subject invention provides for a method of selectively cloning homoduplex nucleic acid molecules, in particular, by using a strain of host cells that contains a conditionally expressed and/or conditionally active mismatch-recognizing enzyme, e.g., a temperature sensitive variant of the gene encoding the endonuclease VII from phage T4. Using this host strain, the invention features a novel cloning method that selects for PCR products that are devoid of PCR-generated mutations.

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: By providing a protection layer at the bevel region, the deposition of polymer materials during the patterning process of complex metallization structures may be reduced. Additionally or alternatively, a surface topography may be provided, for instance in the form of respective recesses, in order to enhance the degree of adhesion of any materials deposited in the bevel region during the manufacturing of complex metallization structures. Advantageously, the provision of the protection layer providing the reduced polymer deposition may be combined with the modified surface topography.

Abstract: By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.

Abstract: A semiconductor device comprises metal lines in a specific metallization layer which have a different thickness and thus a different resistivity in different device regions. In this way, in high density areas of the device, metal lines of reduced thickness may be provided in order to comply with process requirements for achieving a minimum pitch between neighboring metal lines, while in other areas having less critical constraints with respect to minimum pitch, a reduced resistivity may be obtained at reduced lateral dimensions compared to conventional strategies. For this purpose, the dielectric material of the metallization layer may be appropriately patterned prior to forming respective trenches or the etch behavior of the dielectric material may be selectively adjusted in order to obtain differently deep trenches.

Abstract: The invention provides a method of generating a signal indicative of the presence of a target nucleic acid sequence in a sample by forming a cleavage structure by incubating a sample comprising a target nucleic acid sequence with a probe, nucleic acid polymerase, nuclease and optionally a primer. The target nucleic acid is extended and circularized and a cleavage structure is formed. The cleavage structure is cleaved with a nuclease to generate a nucleic acid fragment which is indicative of the presence of a target nucleic acid sequence in the sample.

Abstract: By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.

Abstract: By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.

Abstract: By forming an additional doped region with increased junction depth at areas in which contact regions may connect to drain and source regions, any contact irregularities may be embedded into the additional doped region, thereby reducing the risk for leakage currents or short circuits between the drain and source region and the well region that may be conventionally caused by the contact irregularity. Moreover, additionally or alternatively, the surface topography of the semiconductor region and the adjacent isolation trench may be modified prior to the formation of metal silicide regions and contact plugs to enhance the lithography procedure for forming respective contact openings in an interlayer dielectric material. For this purpose, the isolation trench may be brought to an equal or higher level compared to the adjacent semiconductor region.

Abstract: By providing additional etch stop layers and/or etch protection layers, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. Consequently, conductive line erosion and/or penetration into extension regions may be significantly reduced, thereby improving the reliability and performance of corresponding semiconductor devices.