Abstract: A lighting device for a motor vehicle, wherein the lighting device has a circuit board with a multiplicity of light-emitting diodes arranged thereon, a transparent optical layer, and a reflector element, wherein the reflector element is arranged between the circuit board and the optical layer, wherein the reflector element has multiple segments into which the reflector element is subdivided, wherein a segment is associated with each light-emitting diode so that light emitted by the light-emitting diodes can be reflected by the reflector element and can pass through the optical layer. Two light-emitting diodes are arranged in a segment. In addition, a lighting system and a motor vehicle are provided.

Abstract: A method may include receiving a first transaction inserting a record into a database and a second transaction deleting the record from the database. A validity period for the record may be determined based on a first commit time at which the first transaction is committed and a second commit time at which the second transaction is committed. A current table and/or a history table of a system versioned table may be updated to include the record based on the validity period of the record. One or more temporal operations may be performed based on the system versioned table. For example, a time travel operation may be performed to retrieve, based on the system versioned table, one or more records that are valid at a given point in time. Related systems and computer program products are also provided.

Abstract: The present invention relates to a method of diagnosing eczema and/or psoriasis, wherein said method differentiates between eczema and psoriasis, and comprises determining the expression of at least two markers in a sample taken from an individual, wherein said at least two markers are selected from CCL27, NOS2, IL36G, KLK13, SOST, NPTX1, PLA2G4D, GDA, IL36A, TGM1, CLEC4G, IL13, TCN1, TMPRSS11D and RHCG, provided that said at least two markers consist of or comprise (a) CCL27 and NOS2; (b) CCL27 and KLK13; (c) IL36G and KLK13; (d) CCL27 and IL36G; (e) NOS2 and IL36G; (f) NOS2 and KLK13; (g) SOST; or (h) NPTX1; and assessing on the basis of the expression of said at least two

Abstract: A process for the manufacture of semi-plastic pharmaceutical unit doses using a rotary moulding machine and semi-plastic pharmaceutical dosage units obtained by this process.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: An apparatus includes an input receiving a modulated optical data signal having components of at least first and second polarizations, a first optical detector receiving the data signal, the first optical detector being first polarization-selective or first polarization-sensitive, passing components of the data signal having the second polarization, and outputting a first electrical signal, a second optical detector coupled to the first optical detector to receive the components of the data signal having the second polarization, and outputting a second electrical signal, and a processor applying a Kramers-Kronig process to the first and second electrical signals, and outputting the data signal using the Kramers-Kronig processed first and second electrical signals.

Abstract: Methods and apparatuses for determining a quality of a mask of a photolithography apparatus are provided, which comprise a parallel calculation, using a plurality of computing devices, of a reference aerial image on the basis of a design of the mask and optical properties of the photolithography apparatus on a plurality of computing devices.

Abstract: The present invention relates to a method for superimposing at least two images of a photolithographic mask, wherein the method comprises the following steps: (a) determining at least one first difference of at least one first image relative to design data of the photolithographic mask; (b) determining at least one second difference of at least one second image relative to design data of the photolithographic mask, or relative to the at least one first image; and (c) superimposing the at least one first image and the at least one second image taking account of the at least one first difference and the at least one second difference.

Abstract: After finishing of the front side CMOS manufacturing process, the silicon wafer is permanently bonded with its front side onto a carrier wafer. The carrier wafer is a high resistivity silicon wafer or a wafer of a dielectric or of a ceramic material. The silicon substrate of the device wafer is thinned from the back side such that the remaining silicon thickness is only a few micrometers. In the area dedicated to a spiral inductor, the substrate material is entirely removed by a masked etching process and the resulting gap is filled with a dielectric material. A spiral inductor coil is formed on the backside of the wafer on top of the dielectric material. The inductor coil is connected to the CMOS circuits on the front side by through-silicon vias.

Abstract: The present invention relates to a solid pharmaceutical preparation of 3-(1-{3-[5-(1-Methyl-piperidin-4-ylmethoxy)-pyrimidin-2-yl]-benzyl}-6-oxo-1,6-dihydro-pyridazin-3-yl)-benzonitrile, a method of making same, and medical uses thereof.

Abstract: The invention relates to a pharmaceutical composition for the modulation of T cell and B cell responses made of one or more prepatations and comprising a therapeutically effective dose of at least one inhibitor of TNFR1-mediated functions and of at least one antigen or allergen.

Abstract: An industrial truck comprising a vehicle body and a pair of fork prongs. Each of the fork prongs extends from the vehicle body towards a corresponding fork end in a longitudinal direction. The industrial truck comprises a plurality of wheels with which the industrial truck stands and moves on a driving surface in a driven and steered manner. At least one of the wheels is assigned to each of the fork prongs. The industrial truck comprises a lifting mechanism to adjust a height of the fork prongs above the driving surface. The industrial truck comprises at least one detection unit to detect objects located in surroundings of the truck within a detection region and to output corresponding data and a control unit operatively coupled to the at least one detection unit to receive and process the data output by the at least one detection unit.

Abstract: An integrated Hall sensor is provided with: a main wafer (10) of semiconductor material having a substrate (101) with a first surface (101a) and a second surface (101b), opposite to the first surface (101a) along a vertical axis (y); Hall sensor terminals (1, 2, 3, 4; 1?, 2?, 3?, 4?) arranged at least one of the first and second surfaces (101a, 101b) of the substrate (101); an isolation structure (109) in the substrate (101) defining a Hall sensor plate (103) of the integrated Hall sensor, the Hall sensor terminals being arranged in the isolation structure (109). The integrated Hall sensor moreover has a test or calibration coil integrated in the wafer (10), having a plurality of windings formed, at least in part, by metal portions (130b, 170b; 130a, 170a) arranged above the first and second surfaces (101a, 101b) of the substrate (101) and defining an inner volume (1001) entirely enclosing the Hall sensor plate (103).

Abstract: A soft chewable pharmaceutical product for delivery of a pharmaceutically acceptable active ingredient to an animal comprising pamoic acid or a pharmaceutically acceptable salt and a process for the manufacture of such soft chewable pharmaceutical product.

Abstract: An apparatus includes an input receiving a modulated optical data signal having components of at least first and second polarizations, a first optical detector receiving the data signal, the first optical detector being first polarization-selective or first polarization-sensitive, passing components of the data signal having the second polarization, and outputting a first electrical signal, a second optical detector coupled to the first optical detector to receive the components of the data signal having the second polarization, and outputting a second electrical signal, and a processor applying a Kramers-Kronig process to the first and second electrical signals, and outputting the data signal using the Kramers-Kronig processed first and second electrical signals.

Abstract: The present disclosure relates to an electronic unit having a sensor connection for receiving at least one measurement value from a sensor, a first data memory, a first communication module, a first display unit and a first input unit, wherein the first data memory has a file with at least one measurement value name and allows for saving the measurement value, wherein the first display unit allows for displaying the measurement value name of the file and of the measurement value, wherein the first input unit allows for assigning the measurement value name to the measurement value.

Abstract: A Hall integrated circuit including a vertical Hall element, having a first wafer and a second wafer, the second wafer including a CMOS substrate integrating a CMOS processing circuit coupled to the vertical Hall element and a stack of dielectric layers, and the first wafer including a Hall-sensor layer having a first surface and a second surface, the first and second wafers being bonded with the interposition of a dielectric layer arranged above the first surface of the Hall-sensor layer. The vertical Hall element has: at least a first Hall terminal; at least a second Hall terminal; a deep trench isolation ring extending through the Hall-sensor layer from the first surface to the second surface and enclosing and isolating a Hall sensor region of the Hall-sensor layer; and a first and a second conductive structures electrically connected to respective contact pads embedded in the stack of the second wafer.

Abstract: A semiconductor vertical Schottky diode device, having: a substrate of semiconductor material, with a front surface and a back surface; a lightly doped region formed in a surface portion of the substrate facing the front surface, having a first conductivity type; a first electrode formed on the lightly doped region on the front surface of the substrate, to establish a Schottky contact; a highly doped region at the back surface of the substrate, in contact with the lightly doped region and having the first conductivity type; and a second electrode electrically in contact with the highly doped region, on the back surface of the substrate, to establish an Ohmic contact.

Abstract: After finishing of the front side CMOS manufacturing process, the silicon wafer is permanently bonded with its front side onto a carrier wafer. The carrier wafer is a high resistivity silicon wafer or a wafer of a dielectric or of a ceramic material. The silicon substrate of the device wafer is thinned from the back side such that the remaining silicon thickness is only a few micrometers. In the area dedicated to a spiral inductor, the substrate material is entirely removed by a masked etching process and the resulting gap is filled with a dielectric material. A spiral inductor coil is formed on the backside of the wafer on top of the dielectric material. The inductor coil is connected to the CMOS circuits on the front side by through-silicon vias.