Abstract: An integrated Hall sensor is provided with: a main wafer (10) of semiconductor material having a substrate (101) with a first surface (101a) and a second surface (101b), opposite to the first surface (101a) along a vertical axis (y); Hall sensor terminals (1, 2, 3, 4; 1?, 2?, 3?, 4?) arranged at least one of the first and second surfaces (101a, 101b) of the substrate (101); an isolation structure (109) in the substrate (101) defining a Hall sensor plate (103) of the integrated Hall sensor, the Hall sensor terminals being arranged in the isolation structure (109). The integrated Hall sensor moreover has a test or calibration coil integrated in the wafer (10), having a plurality of windings formed, at least in part, by metal portions (130b, 170b; 130a, 170a) arranged above the first and second surfaces (101a, 101b) of the substrate (101) and defining an inner volume (1001) entirely enclosing the Hall sensor plate (103).

Abstract: The invention relates to a computer implemented method for simulating an aerial image of a model of a photolithography mask illuminated by incident electromagnetic waves, the method comprising: obtaining the model of the photolithography mask, the model describing the photolithography mask at least partially in a dimension orthogonal to the mask carrier plane; simulating the propagation of the incident electromagnetic waves through the model of the photolithography mask using a machine learning model, wherein the machine learning model maps the model of the photolithography mask to a representation of an electromagnetic field generated by the incident electromagnetic waves on the photolithography mask; obtaining the aerial image of the model of the photolithography mask by applying a simulation of an imaging process. The invention also relates to corresponding computer programs, computer-readable media and systems.

Abstract: The invention relates to a computer implemented method for simulating an aerial image of a model of a photolithography mask illuminated by incident electromagnetic waves, the method comprising: obtaining the model of the photolithography mask; simulating the propagation of the incident electromagnetic waves through the model of the photolithography mask using a machine learning model, wherein the machine learning model maps the model of the photolithography mask to a representation of an electromagnetic field generated by the incident electromagnetic waves on the photolithography mask; obtaining the aerial image of the model of the photolithography mask by applying a simulation of an imaging process. The invention also relates to corresponding computer programs, computer-readable media and systems.

Abstract: A semiconductor vertical Schottky diode device, having: a substrate of semiconductor material, with a front surface and a back surface; a lightly doped region formed in a surface portion of the substrate facing the front surface, having a first conductivity type; a first electrode formed on the lightly doped region on the front surface of the substrate, to establish a Schottky contact; a highly doped region at the back surface of the substrate, in contact with the lightly doped region and having the first conductivity type; and a second electrode electrically in contact with the highly doped region, on the back surface of the substrate, to establish an Ohmic contact.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: A method for measuring photomasks for semiconductor lithography, includes the following steps: loading a photomask into a recording unit of a measuring apparatus, recording images of individual measurement regions on the photomask by means of an image capturing unit, comparing at least one recorded image of a measurement region with a simulated image of this measurement region using specific simulation parameters. In the process, the comparison of at least one of the recorded images with the corresponding simulated image is used to carry out an adjustment of at least one portion of the simulation parameters.

Abstract: The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Abstract: A Hall integrated circuit including a vertical Hall element, having a first wafer and a second wafer, the second wafer including a CMOS substrate integrating a CMOS processing circuit coupled to the vertical Hall element and a stack of dielectric layers, and the first wafer including a Hall-sensor layer having a first surface and a second surface, the first and second wafers being bonded with the interposition of a dielectric layer arranged above the first surface of the Hall-sensor layer. The vertical Hall element has: at least a first Hall terminal; at least a second Hall terminal; a deep trench isolation ring extending through the Hall-sensor layer from the first surface to the second surface and enclosing and isolating a Hall sensor region of the Hall-sensor layer; and a first and a second conductive structures electrically connected to respective contact pads embedded in the stack of the second wafer.

Abstract: The present invention relates to a method of diagnosing eczema and/or psoriasis, wherein said method differentiates between eczema and psoriasis, and comprises determining the expression of at least two markers in a sample taken from an individual, wherein said at least two markers are selected from CCL27, NOS2, IL36G, KLK13, SOST, NPTX1, PLA2G4D, GDA, IL36A, TGM1, CLEC4G, IL13, TCN1, TMPRSS11D and RHCG, provided that said at least two markers consist of or comprise (a) CCL27 and NOS2; (b) CCL27 and KLK13; (c) IL36G and KLK13; (d) CCL27 and IL36G; (e) NOS2 and IL36G; (f) NOS2 and KLK13; (g) SOST; or (h) NPTX1; and assessing on the basis of the expression of said at least two markers whether the individual is afflicted with eczema and/or psoriasis.

Abstract: An apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.

Abstract: The present invention relates to a method of diagnosing eczema and/or psoriasis, wherein said method differentiates between eczema and psoriasis, and comprises determining the expression of at least two markers in a sample taken from an individual, wherein said at least two markers are selected from CCL27, NOS2, IL36G, KLK13, SOST, NPTX1, PLA2G4D, GDA, IL36A, TGM1, CLEC4G, IL13, TCN1, TMPRSS11D and RHCG, provided that said at least two markers consist of or comprise (a) CCL27 and NOS2; (b) CCL27 and KLK13; (c) IL36G and KLK13; (d) CCL27 and IL36G; (e) NOS2 and IL36G; (f) NOS2 and KLK13; (g) SOST; or (h) NPTX1; and assessing on the basis of the expression of said at least two

Abstract: A process for the manufacture of semi-plastic pharmaceutical unit doses using a rotary moulding machine and semi-plastic pharmaceutical dosage units obtained by this process.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: An apparatus includes an input receiving a modulated optical data signal having components of at least first and second polarizations, a first optical detector receiving the data signal, the first optical detector being first polarization-selective or first polarization-sensitive, passing components of the data signal having the second polarization, and outputting a first electrical signal, a second optical detector coupled to the first optical detector to receive the components of the data signal having the second polarization, and outputting a second electrical signal, and a processor applying a Kramers-Kronig process to the first and second electrical signals, and outputting the data signal using the Kramers-Kronig processed first and second electrical signals.

Abstract: Methods and apparatuses for determining a quality of a mask of a photolithography apparatus are provided, which comprise a parallel calculation, using a plurality of computing devices, of a reference aerial image on the basis of a design of the mask and optical properties of the photolithography apparatus on a plurality of computing devices.

Abstract: The present invention relates to a method for superimposing at least two images of a photolithographic mask, wherein the method comprises the following steps: (a) determining at least one first difference of at least one first image relative to design data of the photolithographic mask; (b) determining at least one second difference of at least one second image relative to design data of the photolithographic mask, or relative to the at least one first image; and (c) superimposing the at least one first image and the at least one second image taking account of the at least one first difference and the at least one second difference.

Abstract: After finishing of the front side CMOS manufacturing process, the silicon wafer is permanently bonded with its front side onto a carrier wafer. The carrier wafer is a high resistivity silicon wafer or a wafer of a dielectric or of a ceramic material. The silicon substrate of the device wafer is thinned from the back side such that the remaining silicon thickness is only a few micrometers. In the area dedicated to a spiral inductor, the substrate material is entirely removed by a masked etching process and the resulting gap is filled with a dielectric material. A spiral inductor coil is formed on the backside of the wafer on top of the dielectric material. The inductor coil is connected to the CMOS circuits on the front side by through-silicon vias.

Abstract: The present invention relates to a solid pharmaceutical preparation of 3-(1-{3-[5-(1-Methyl-piperidin-4-ylmethoxy)-pyrimidin-2-yl]-benzyl}-6-oxo-1,6-dihydro-pyridazin-3-yl)-benzonitrile, a method of making same, and medical uses thereof.

Abstract: The invention relates to a pharmaceutical composition for the modulation of T cell and B cell responses made of one or more prepatations and comprising a therapeutically effective dose of at least one inhibitor of TNFR1-mediated functions and of at least one antigen or allergen.