Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate and a display panel. The display substrate includes: a first semiconductor layer on a base substrate, where an active layer of the first thin film transistor is in the first semiconductor layer, and the active layer of the first thin film transistor at least comprises a channel region and a drain contact region; an interlayer insulation layer on a side of the first semiconductor layer away from the base substrate; and a first conductive layer on a side of the interlayer insulation layer away from the first semiconductor layer, wherein the pixel electrode is located in the first conductive layer, and the pixel electrode in the pixel unit is directly and electrically connected to the drain contact region of the active layer of the first thin film transistor through a through hole.

Abstract: The present disclosure relates to an OLED display panel and display device. The OLED display panel includes: a display area, a bending area and a bonding area for bonding a circuit board, wherein the display panel further includes: a base substrate; a first semiconductor pattern on the base substrate; a first insulating layer group on the first semiconductor pattern; a second semiconductor pattern on the first insulating layer group; a second insulating layer group on the second semiconductor pattern; first via holes in the first insulating layer group and the second insulating layer group; second via holes in the second insulating layer group, wherein the display panel further includes: a first groove located in the bending area and having a depth substantially identical to that of the first via holes; and a metal trace, connecting a trace in the display area to the circuit board.

Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.

Abstract: Provided is an array substrate. The array substrate includes a display region and a non-display region located at a periphery of the display region, wherein the array substrate includes a substrate; a first transistor and a second transistor that are disposed on the substrate, wherein the first transistor is disposed in the display region, and the second transistor is disposed in the non-display region; and a data line and a pixel electrode that are disposed in the display region, wherein the data line is disposed on a side of the first active layer close to the substrate and is lapped with the first active layer, and the pixel electrode is disposed on a side of the first gate facing away from the substrate and is lapped with the first active layer.

Abstract: Provided is a shift register unit. The shift register unit includes an input circuit, a compensation control circuit, and an output circuit; wherein input circuit coupled to an input signal terminal, an input control terminal, a first power supply terminal, a reference node, and a first node; the compensation control circuit coupled to a first clock signal terminal, the reference node, and the first node; and the output circuit coupled to the first node, a second clock signal terminal, and an output terminal.

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region opposite to each other; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor including a first active layer, the first active layer includes a metal oxide semiconductor material; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor, and the second thin film transistor includes a second active layer, the second active layer includes a metal oxide semiconductor material.

Abstract: A display panel includes base substrate, second conductive layer, second active layer, third gate insulating layer, third conductive layer in sequence. The second conductive layer includes first conductive part forming first gate of first transistor. The second active layer includes first active part including first and second sub-active parts and third sub-active part therebetween. The first and second sub-active parts form first and second electrodes of first transistor, and portion of the third sub-active part forms channel region of first transistor. Orthographic projection of the first conductive part on the base substrate covers that of the third sub-active part. Orthographic projection of the third gate insulating layer on the base substrate covers that of the first active part. The third conductive layer includes second conductive part forming second gate of first transistor. Orthographic projection of the second conductive part on the base substrate covers that of the channel region.

Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.

Abstract: A thin film transistor includes a first active layer, a second active layer, a first electrode, a second electrode and a third electrode. The first active layer includes a first surface away from a substrate. The second active layer includes a second surface in contact with the first surface. The first electrode, the first active layer and the second active layer have an overlapping region. The second electrode, the first active layer and the second active layer have an overlapping region. The third electrode, the first active layer and the second active layer have an overlapping region, and the third electrode is opposite to the second electrode. The second surface is located within the first surface, and a distance between at least part of a border of the second surface and a border of the first surface is less than or equal to 0.5 ?m.

Abstract: A liquid crystal display device, a method for displaying an image, and an electronic device are provided. In the first operation mode, a control circuit of the display device is configured to: receive display data of an mth image frame, and control the display device to display n sub-field images. The display data includes initial gray scales under n base colors. In a sub-field image of the mth image frame: pixels include a target pixel, and an actual gray scale of the target pixel is an average of an intermediate gray scale and initial gray scales of T non-target pixels. An actual gray scale of at least a part of non-target pixels is an initial gray scale thereof. The target pixel meets at least one of a first condition and a second condition.

Abstract: A display substrate, a manufacturing method therefor, and a display device are provided.

Abstract: A photodetection backplane, a liquid crystal display panel and a liquid crystal display apparatus are provided. The photodetection backplane includes: a base substrate; a first organic switching unit arranged at a side of the base substrate; and an organic photodetector arranged at a same side of the base substrate as the first organic switching unit. The organic photodetector is electrically connected to the first organic switching unit, and at least one film layer of the organic photodetector and a film layer of the first organic switching unit are arranged in a same layer and made of a same material. (FIG.

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

Abstract: The present disclosure provides a display substrate, including: a base substrate; and a plurality of spacers on a side of the base substrate and each comprising at least one first sub-pattern and at least one second sub-pattern stacked along a normal direction of the base substrate, the first sub-pattern being made of an organic material and the second sub-pattern being made of an inorganic material. The present disclosure also provides a method for manufacturing the display substrate and a display device.

Abstract: A color filter, a preparation method therefore, an array substrate and a display device are provided. The color filter includes a plurality of filter units (20) provided on a base substrate (10) for transmitting light of different colors, and a light shielding layer (30) located between adjacent filter units (20) for transmitting light of different colors. The filter unit (20) includes a first surface facing the base substrate (10), a second surface facing away from the base substrate, and a third surface connecting the first surface and the second surface. The light shielding layer (30) is provided on the third surface of at least one of two adjacent filter units (20) transmitting light of different colors.

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

Abstract: An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.