Patents by Inventor Ce Ning

Ce Ning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9502436
    Abstract: A thin film transistor, an array substrate and a method for fabricating the array substrate, and a display device are disclosed. The thin film transistor comprises a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer provided on a base substrate, and comprises: a first transparent electrode provided between the source electrode and the semiconductor active layer, corresponding to the source electrode and in direct contact with the source electrode; a second transparent electrode provided between the drain electrode and the semiconductor active layer, corresponding to the drain electrode and in direct contact with the drain electrode, the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: November 22, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Ce Ning
  • Publication number: 20160338189
    Abstract: The present disclosure relates to the technical field of flexible substrate processing, and discloses a flexible substrate attaching method. The flexible substrate attaching method comprises the steps of: pre-fixing a flexible substrate on a carrier substrate with a first fixation structure; forming a thin film on the flexible substrate, and forming a pattern of the thin film via a patterning process; the pattern of the thin film contacting at least a part of the flexible substrate and at least a part of the carrier substrate simultaneously to play the function of consolidating the flexible substrate onto the carrier substrate. In this flexible substrate attaching method, a flexible substrate can be fixed on a carrier substrate in good effect and the flexible panel can be easily detached after the manufacture is completed. The present disclosure further provides a flexible substrate attachment structure.
    Type: Application
    Filed: February 10, 2015
    Publication date: November 17, 2016
    Inventors: Ce Ning, Tao Gao
  • Publication number: 20160315195
    Abstract: An array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method comprises: forming a first gate metal pattern on a base substrate; forming a gate insulating layer, a first active layer pattern and a source-drain metal pattern on the base substrate on which the first gate metal pattern is formed; forming a first protective layer pattern and a through hole pattern on the base substrate on which the source-drain metal pattern is formed; and forming a second active layer pattern and a pixel electrode pattern on the base substrate on which the first protective layer pattern is formed. Embodiments of the present disclosure solve problems of poor display performance and high cost of the array substrate and achieve effects of improving the display performance and reducing the cost.
    Type: Application
    Filed: March 31, 2016
    Publication date: October 27, 2016
    Inventors: Ce Ning, Wei Yang, Xiaohu Li
  • Publication number: 20160308061
    Abstract: A thin film transistor and a fabrication method thereof, and a display device are provided. The thin film transistor comprises an active layer, wherein, a target oxide is formed at a portion of the active layer where an oxygen content is higher than oxygen contents of other portions of the active layer, and a carrier mobility of the target oxide is greater than that of other portions of the active layer.
    Type: Application
    Filed: April 13, 2016
    Publication date: October 20, 2016
    Inventors: Wei Yang, Woo Bong Lee, Ce Ning, Wenlin Zhang
  • Publication number: 20160293628
    Abstract: The present disclosure provides a thin film transistor (TFT) array substrate, its manufacturing method and a display device. The method includes steps of: forming patterns of a common electrode, a common electrode line, a gate line and a data line on a substrate by a single patterning process; forming an insulating layer; forming a pattern of an active layer by a single patterning process; forming a gate insulating layer and forming via-holes corresponding to the gate line, the data line and the active layer in the gate insulating layer by a single patterning process; and forming patterns of a pixel electrode, a gate electrode, a source electrode and a drain electrode by a single patterning process.
    Type: Application
    Filed: October 31, 2014
    Publication date: October 6, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Ce NING
  • Patent number: 9373649
    Abstract: The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and driving electrodes provided on the base substrate, the thin film transistor includes a gate, a gate insulating layer, an active layer, a source and a drain, the driving electrodes include a slit-shaped electrode and a plate-shaped electrode which are located in different layers and at least partially overlap with each other in the orthographic projection direction, the source, the drain and the active layer are formed so that part of their bottom surfaces are located in the same plane, and a resin layer is further provided between the thin film transistor and the plate-shaped electrode.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: June 21, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce Ning, Wei Yang, Ke Wang
  • Patent number: 9362414
    Abstract: Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: June 7, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ke Wang, Seongyeol Yoo, Ce Ning, Wei Yang
  • Publication number: 20160035760
    Abstract: The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and driving electrodes provided on the base substrate, the thin film transistor includes a gate, a gate insulating layer, an active layer, a source and a drain, the driving electrodes include a slit-shaped electrode and a plate-shaped electrode which are located in different layers and at least partially overlap with each other in the orthographic projection direction, the source, the drain and the active layer are formed so that part of their bottom surfaces are located in the same plane, and a resin layer is further provided between the thin film transistor and the plate-shaped electrode.
    Type: Application
    Filed: June 30, 2014
    Publication date: February 4, 2016
    Inventors: Ce NING, Wei YANG, Ke WANG
  • Patent number: 9240424
    Abstract: Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: January 19, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce Ning, Zhijun Lv
  • Publication number: 20160005869
    Abstract: Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.
    Type: Application
    Filed: April 16, 2014
    Publication date: January 7, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ke WANG, Seongyeol YOO, Ce NING, Wei YANG
  • Patent number: 9178046
    Abstract: Embodiment of the present invention disclose an array substrate and a manufacturing method thereof, and the manufacturing method of an array substrate comprises the following steps: Step S1: a gate electrode metal layer, an insulating layer and an active layer are deposited successively on a substrate, and gate electrodes, gate lines and an active layer pattern are formed through a first mask process; Step S2: a protective layer is deposited on the substrate after completion of the step S1, and via-holes are formed in the protective layer through a second mask process; and Step S3: a pixel electrode layer and a source/drain electrode metal layer are deposited sequentially on the substrate after completion of the step S2, and source/drain electrodes, pixel electrodes and data lines are formed through a third mask process.
    Type: Grant
    Filed: September 26, 2012
    Date of Patent: November 3, 2015
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Ce Ning
  • Publication number: 20150303221
    Abstract: An embodiment of the disclosure provides an array substrate comprising: a base substrate, an active layer and a transparent electrode disposed on the base substrate, an etch stop layer disposed on the active layer and configured for protecting a portion of the active layer, wherein the active layer, the transparent electrode and the etch stop layer are formed through one patterning process and one doping process, the doped region and the first transparent electrode are made of same material and are disposed on the same layer.
    Type: Application
    Filed: October 18, 2013
    Publication date: October 22, 2015
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: CE NING
  • Publication number: 20150303222
    Abstract: A thin film transistor, an array substrate and a method for fabricating the array substrate, and a display device are disclosed. The thin film transistor comprises a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer provided on a base substrate, and comprises: a first transparent electrode provided between the source electrode and the semiconductor active layer, corresponding to the source electrode and in direct contact with the source electrode; a second transparent electrode provided between the drain electrode and the semiconductor active layer, corresponding to the drain electrode and in direct contact with the drain electrode, the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer.
    Type: Application
    Filed: April 16, 2014
    Publication date: October 22, 2015
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Ce Ning
  • Patent number: 8952387
    Abstract: According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: February 10, 2015
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Ce Ning, Xuehui Zhang, Jing Yang
  • Publication number: 20140273362
    Abstract: The embodiments of the present invention provide a method for manufacturing a thin film transistor and a method for manufacturing an array substrate.
    Type: Application
    Filed: December 14, 2012
    Publication date: September 18, 2014
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tao Gao, Ce Ning, Hang Yu, Fangzhen Zhang
  • Publication number: 20140183519
    Abstract: According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device.
    Type: Application
    Filed: November 28, 2012
    Publication date: July 3, 2014
    Inventors: Ce Ning, Xuehui Zhang, Jing Yang
  • Publication number: 20140117372
    Abstract: Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires.
    Type: Application
    Filed: November 21, 2012
    Publication date: May 1, 2014
    Applicant: BOE TECHNOLOGY GROUP CO, LTD.
    Inventors: Ce Ning, Zhijun Lv
  • Publication number: 20140091331
    Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.
    Type: Application
    Filed: September 29, 2012
    Publication date: April 3, 2014
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce Ning, Xuehui Zhang, Jing Yang
  • Publication number: 20140054580
    Abstract: Embodiment of the present invention disclose an array substrate and a manufacturing method thereof, and the manufacturing method of an array substrate comprises the following steps: Step S1: a gate electrode metal layer, an insulating layer and an active layer are deposited successively on a substrate, and gate electrodes, gate lines and an active layer pattern are formed through a first mask process; Step S2: a protective layer is deposited on the substrate after completion of the step S1, and via-holes are formed in the protective layer through a second mask process; and Step S3: a pixel electrode layer and a source/drain electrode metal layer are deposited sequentially on the substrate after completion of the step S2, and source/drain electrodes, pixel electrodes and data lines are formed through a third mask process.
    Type: Application
    Filed: September 26, 2012
    Publication date: February 27, 2014
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Ce Ning