Patents by Inventor Cem Basceri

Cem Basceri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200350154
    Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial layers by epitaxial growth on the epitaxial silicon layer.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens
  • Publication number: 20200335418
    Abstract: An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.
    Type: Application
    Filed: June 26, 2020
    Publication date: October 22, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens, Ozgur Aktas
  • Patent number: 10811397
    Abstract: Some embodiments of the disclosure provide for a lighting system including a substrate. The lighting system includes several blue light emitting diodes (LEDs) supported by the substrate. The lighting system includes at least one red LED supported by the substrate. The lighting system includes a light conversion material covering the blue LEDs and the at least one red LED.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: October 20, 2020
    Assignee: BRIDGELUX INC.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Peng Chen
  • Patent number: 10763299
    Abstract: A method includes forming a wide band gap (WBG) epitaxial layer on an engineered substrate. The WBG epitaxial layer includes a plurality of groups of epitaxial layers. The engineered substrate includes engineered layers formed on a bulk material having a coefficient of thermal expansion (CTE) matching a CTE of the WBG epitaxial layer. The method also includes forming a plurality of WBG devices based on the plurality of groups of epitaxial layers by: for each respective WBG device, forming internal interconnects and electrodes within a respective group of epitaxial layers. The method further includes forming external interconnects between the electrodes of different WBG devices of the plurality of WBG devices to form an integrated circuit.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: September 1, 2020
    Assignee: QROMIS, INC.
    Inventors: Vladimir Odnoblyudov, Cem Basceri
  • Patent number: 10763110
    Abstract: A method of forming doped regions by diffusion in gallium nitride materials includes providing a substrate structure including a gallium nitride layer and forming a mask on the gallium nitride layer. The mask exposes one or more portions of a top surface of the gallium nitride layer. The method also includes depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer and concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions. The magnesium-containing gallium nitride layer provides a source of magnesium dopants. The method further includes removing the magnesium-containing gallium nitride layer and removing the mask.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: September 1, 2020
    Assignee: QROMIS, INC.
    Inventors: Ozgur Aktas, Vladimir Odnoblyudov, Cem Basceri
  • Patent number: 10763109
    Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: September 1, 2020
    Assignee: Qromis, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens
  • Patent number: 10755986
    Abstract: A substrate structure includes a polycrystalline substrate, a plurality of thin film layers disposed on the polycrystalline substrate, a bonding layer coupled to at least a portion of the plurality of thin films, and a single crystal silicon layer joined to the bonding layer.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: August 25, 2020
    Assignee: QROMIS, INC.
    Inventors: Ozgur Aktas, Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri
  • Publication number: 20200258741
    Abstract: A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.
    Type: Application
    Filed: April 29, 2020
    Publication date: August 13, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri
  • Patent number: 10734303
    Abstract: An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: August 4, 2020
    Assignee: Qromis, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens, Ozgur Aktas
  • Publication number: 20200234945
    Abstract: A method of fabricating a ceramic substrate structure includes providing a ceramic substrate, encapsulating the ceramic substrate in a barrier layer, and forming a bonding layer coupled to the barrier layer. The method further includes removing a portion of the bonding layer to expose at least a portion of the barrier layer and define fill regions, and depositing a second bonding layer on the at least a portion of the exposed barrier layer and the fill regions.
    Type: Application
    Filed: January 27, 2020
    Publication date: July 23, 2020
    Applicant: Qromis, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens
  • Publication number: 20200227251
    Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 16, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens
  • Publication number: 20200212213
    Abstract: A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.
    Type: Application
    Filed: March 6, 2020
    Publication date: July 2, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Ozgur Aktas
  • Publication number: 20200212214
    Abstract: A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.
    Type: Application
    Filed: March 6, 2020
    Publication date: July 2, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Ozgur Aktas
  • Patent number: 10679852
    Abstract: A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: June 9, 2020
    Assignee: QROMIS, INC.
    Inventors: Vladimir Odnoblyudov, Cem Basceri
  • Patent number: 10655243
    Abstract: An engineered substrate includes a support structure comprising a polycrystalline ceramic core, an adhesion layer coupled to the polycrystalline ceramic core, and a barrier layer coupled to the adhesion layer. The engineered substrate also includes an bonding layer coupled to the support structure, a substantially single crystal layer coupled to the bonding layer, and an epitaxial gallium nitride layer coupled to the substantially single crystal layer.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: May 19, 2020
    Assignee: QROMIS, INC.
    Inventors: Vladimir Odnoblyudov, Cem Basceri
  • Publication number: 20200152456
    Abstract: A method of forming a plurality of devices on an engineered substrate structure includes forming an engineered substrate by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core with a first adhesion shell, encapsulating the first adhesion shell with a barrier layer, forming a bonding layer on the barrier layer, and forming a substantially single crystal layer coupled to the bonding layer. The method further comprises forming a buffer layer coupled to the substantially single crystal layer, forming one or more epitaxial III-V layers on the buffer layer according to requirements associated with the plurality of devices, and forming the plurality of devices on the substrate by removing a portion of the one or more epitaxial III-V layers disposed between the plurality of devices and removing a portion of the buffer layer disposed between the plurality of devices.
    Type: Application
    Filed: January 14, 2020
    Publication date: May 14, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Dilip Risbud, Ozgur Aktas, Cem Basceri
  • Patent number: 10622468
    Abstract: A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: April 14, 2020
    Assignee: QROMIS, INC.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Ozgur Aktas
  • Publication number: 20200111698
    Abstract: A semiconductor diode includes an engineered substrate including a substantially single crystal layer, a buffer layer coupled to the substantially single crystal layer, and a semi-insulating layer coupled to the buffer layer. The semiconductor diode also includes a first N-type gallium nitride layer coupled to the semi-insulating layer and a second N-type gallium nitride layer coupled to the first N-type gallium nitride layer. The first N-type gallium nitride layer has a first doping concentration and the second N-type gallium nitride layer has a second doping concentration less than the first doping concentration. The semiconductor diode further includes a P-type gallium nitride layer coupled to the second N-type gallium nitride layer, an anode contact coupled to the P-type gallium nitride layer, and a cathode contact coupled to a portion of the first N-type gallium nitride layer.
    Type: Application
    Filed: December 5, 2019
    Publication date: April 9, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Dilip Risbud, Ozgur Aktas, Cem Basceri
  • Publication number: 20200066574
    Abstract: A substrate includes a polycrystalline ceramic core; a first adhesion layer encapsulating the polycrystalline ceramic core; a conductive layer encapsulating the first adhesion layer; a second adhesion layer encapsulating the conductive layer; a barrier layer encapsulating the second adhesion layer, and a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer.
    Type: Application
    Filed: November 4, 2019
    Publication date: February 27, 2020
    Applicant: QROMIS, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri, Shari Farrens
  • Patent number: 10573516
    Abstract: A method of forming a plurality of devices on an engineered substrate structure includes forming an engineered substrate by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core with a first adhesion shell, encapsulating the first adhesion shell with a barrier layer, forming a bonding layer on the barrier layer, and forming a substantially single crystal layer coupled to the bonding layer. The method further comprises forming a buffer layer coupled to the substantially single crystal layer, forming one or more epitaxial III-V layers on the buffer layer according to requirements associated with the plurality of devices, and forming the plurality of devices on the substrate by removing a portion of the one or more epitaxial III-V layers disposed between the plurality of devices and removing a portion of the buffer layer disposed between the plurality of devices.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: February 25, 2020
    Assignee: Qromis, Inc.
    Inventors: Vladimir Odnoblyudov, Dilip Risbud, Ozgur Aktas, Cem Basceri