Abstract: An engineered substrate structure includes a ceramic substrate having a front surface characterized by a plurality of peaks. The ceramic substrate includes a polycrystalline material. The engineered substrate structure also includes a planarization layer comprising a planarization layer material and coupled to the front surface of the ceramic substrate. The planarization layer defines fill regions filled with the planarization layer material between adjacent peaks of the plurality of peaks on the front surface of the ceramic substrate. The engineered substrate structure further includes a barrier shell encapsulating the ceramic substrate and the planarization layer, wherein the barrier shell has a front side and a back side, a bonding layer coupled to the front side of the barrier shell, a single crystal layer coupled to the bonding layer, and a conductive layer coupled to the back side of the barrier shell.

Abstract: An integrated circuit device includes an engineered substrate including a substantially single crystal layer and a buffer layer coupled to the substantially single crystal layer. The integrated circuit device also includes a plurality of semiconductor devices coupled to the buffer layer. The plurality of semiconductor devices can include a first power device coupled to a first portion of the buffer layer and a second power device coupled to a second portion of the buffer layer. The first power device includes a first channel region comprising a first end, a second end, and a first central portion disposed between the first end and the second end. The second power device includes a second channel region comprising a third end, a fourth end, and a second central portion disposed between the third end and the fourth end.

Abstract: A method of forming a plurality of devices on an engineered substrate structure includes forming an engineered substrate by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core with a first adhesion shell, encapsulating the first adhesion shell with a barrier layer, forming a bonding layer on the barrier layer, and forming a substantially single crystal layer coupled to the bonding layer. The method further comprises forming a buffer layer coupled to the substantially single crystal layer, forming one or more epitaxial III-V layers on the buffer layer according to requirements associated with the plurality of devices, and forming the plurality of devices on the substrate by removing a portion of the one or more epitaxial III-V layers disposed between the plurality of devices and removing a portion of the buffer layer disposed between the plurality of devices.

Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

Abstract: An interposer includes a polycrystalline ceramic core disposed between a first surface and a second surface of the interposer, an adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the adhesion layer, and one or more electrically conductive vias extending from the first surface to the second surface through the polycrystalline ceramic core, the adhesion layer, and the barrier layer.

Abstract: A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.

Abstract: A semiconductor diode includes an engineered substrate including a substantially single crystal layer, a buffer layer coupled to the substantially single crystal layer, and a semi-insulating layer coupled to the buffer layer. The semiconductor diode also includes a first N-type gallium nitride layer coupled to the semi-insulating layer and a second N-type gallium nitride layer coupled to the first N-type gallium nitride layer. The first N-type gallium nitride layer has a first doping concentration and the second N-type gallium nitride layer has a second doping concentration less than the first doping concentration. The semiconductor diode further includes a P-type gallium nitride layer coupled to the second N-type gallium nitride layer, an anode contact coupled to the P-type gallium nitride layer, and a cathode contact coupled to a portion of the first N-type gallium nitride layer.

Abstract: A method of forming a doped gallium nitride (GaN) layer includes providing a substrate structure, including a gallium nitride layer, forming a dopant source layer over the gallium nitride layer, and depositing a capping structure over the dopant source layer. The method also includes annealing the substrate structure to diffuse dopants into the gallium nitride layer, removing the capping structure and the dopant source layer, and activating the diffused dopants.

Abstract: Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.

Abstract: An engineered substrate structure includes a ceramic substrate having a front surface characterized by a plurality of voids, and a barrier layer encapsulating the ceramic substrate. The barrier layer defining a plurality of valleys corresponding to the plurality of voids. The engineered substrate structure further includes a first bonding layer comprising a bonding layer material and coupled to the barrier layer on the front surface of the ceramic substrate. The first bonding layer defines a plurality of fill regions filled with the bonding layer material in the plurality of valleys corresponding to the plurality of voids. The engineered substrate structure further includes a second bonding layer coupled to the first bonding layer, and a substantially single crystalline layer joined to the second bonding layer.

Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

Abstract: Some embodiments of the disclosure provide for a lighting system including a substrate. The lighting system includes several blue light emitting diodes (LEDs) supported by the substrate. The lighting system includes at least one red LED supported by the substrate. The lighting system includes a light conversion material covering the blue LEDs and the at least one red LED.

Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.

Abstract: A method of fabricating a ceramic substrate structure includes providing a ceramic substrate, encapsulating the ceramic substrate in a barrier layer, and forming a bonding layer coupled to the barrier layer. The method further includes removing a portion of the bonding layer to expose at least a portion of the barrier layer and define fill regions, and depositing a second bonding layer on the at least a portion of the exposed barrier layer and the fill regions.

Abstract: A micro-electromechanical system (MEMS) device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The support structure defines a cavity. The MEMS device also includes a III-V membrane coupled to a portion of the support structure. A portion of the III-V membrane is suspended over the cavity defined by the support structure and defines a MEMS structure.

Abstract: A substrate includes a polycrystalline ceramic core; a first adhesion layer encapsulating the polycrystalline ceramic core; a conductive layer encapsulating the first adhesion layer; a second adhesion layer encapsulating the conductive layer; a barrier layer encapsulating the second adhesion layer, and a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer.

Abstract: Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.

Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial layers by epitaxial growth on the epitaxial silicon layer.

Abstract: An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.

Abstract: Some embodiments of the disclosure provide for a lighting system including a substrate. The lighting system includes several blue light emitting diodes (LEDs) supported by the substrate. The lighting system includes at least one red LED supported by the substrate. The lighting system includes a light conversion material covering the blue LEDs and the at least one red LED.