Abstract: A substrate and a method of making a substrate having a functionally gradient coefficient of thermal expansion are described herein. A system having a silicon die, an organic package substrate, and a substrate having a functionally gradient coefficient of thermal expansion, connecting the silicon die and the organic substrate is also described. The coefficient of thermal expansion at the upper surface of the substrate matches the coefficient of thermal expansion of the die, the coefficient of thermal expansion at the lower surface of the substrate matches the coefficient of thermal expansion of the package substrate, and the substrate has one or more coefficients of thermal expansion between the coefficients of thermal expansion of the upper and lower surfaces.

Abstract: An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted.

Abstract: A substrate and a method of making a substrate having a functionally gradient coefficient of thermal expansion are described herein. A system having a silicon die, an organic package substrate, and a substrate having a functionally gradient coefficient of thermal expansion, connecting the silicon die and the organic substrate is also described. The coefficient of thermal expansion at the upper surface of the substrate matches the coefficient of thermal expansion of the die, the coefficient of thermal expansion at the lower surface of the substrate matches the coefficient of thermal expansion of the package substrate, and the substrate has one or more coefficients of thermal expansion between the coefficients of thermal expansion of the upper and lower surfaces.

Abstract: An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature.

Abstract: This invention relates to the manufacture of a substrate, such as a package substrate or an interposer substrate, of an integrated circuit package. A base structure is formed from a green material having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. A capacitor structure is formed on the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill vias openings in brittle substrates such as silicon substrates.

Abstract: An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature.

Abstract: An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature.

Abstract: A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor assembly is also part of computing system.

Abstract: In some embodiments, an individual sub-assembly containing a ceramic interposer, silicon voltage regulator, and array capacitor is presented. In this regard, an apparatus is introduced having a table-shaped ceramic interposer containing conductive traces, a silicon voltage regulator coupled with contacts on a first surface of the ceramic interposer, and an array capacitor coupled with contacts on a second surface of the ceramic interposer. Other embodiments are also disclosed and claimed.

Abstract: In some embodiments, a ceramic interposer with silicon voltage regulator and array capacitor combination for integrated circuit packages is presented. In this regard, an apparatus is introduced having a bowl-shaped ceramic interposer containing conductive traces, one or more silicon voltage regulator(s) coupled with contacts on a first surface of the ceramic interposer, and one or more array capacitor(s) coupled with contacts on a second surface of the ceramic interposer. Other embodiments are also disclosed and claimed.

Abstract: A ceramic package substrate has a recess. This allows a device in that recess to be close to a die attached to the substrate's top side, for better performance. The device may be an array capacitor, an in-silicon voltage regulator, or another device or devices.

Abstract: A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate comprising at least one capacitor structure formed on a surface, the capacitor structure comprising a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material comprises columnar grains.

Abstract: A thin-film capacitor assembly includes two plates that are accessed through deep and shallow vias. The thin-film capacitor assembly is able to be coupled with a spacer and an interposer. The thin-film capacitor assembly is also able to be stacked with a plurality of thin-film capacitor assemblies. The thin-film capacitor assembly is also part of computing system.

Abstract: A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate comprising at least one capacitor structure formed on a surface, the capacitor structure comprising a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material comprises columnar grains.

Abstract: A method including depositing a suspension of a colloid comprising an amount of nano-particles of a ceramic material on a substrate; and thermally treating the suspension to form a thin film. A method including depositing a plurality of nano-particles of a ceramic material to pre-determined locations across a surface of a substrate; and thermally treating the plurality of nano-particles to form a thin film. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate comprising at least one capacitor structure formed on a surface, the capacitor structure comprising a first electrode, a second electrode, and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material comprises columnar grains.

Abstract: An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature.

Abstract: A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.

Abstract: A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.

Abstract: A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.

Abstract: An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted.