Patents by Inventor Chan Chung

Chan Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11040498
    Abstract: The present disclosure relates to an apparatus for manufacturing a nerve conduit, more particularly to an apparatus for manufacturing a porous nerve conduit using glass fibers whereby microchannels are formed using the space between the glass fibers and the defective rate and location-dependent variation of each nerve conduit can be minimized through uniform decompression during the manufacture. The nerve conduit manufactured according to the present disclosure can be manufactured to have various diameters and lengths to be applicable to in vitro and in vivo researches on nerves.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: June 22, 2021
    Assignee: RION CO., LTD.
    Inventors: Ki Woong Park, Ku Chan Chung, Jung Keun Hyun, Jong Wan Kim
  • Publication number: 20210172367
    Abstract: A catalytic converter for a vehicle includes: an inlet cone portion connected to an exhaust side of a turbocharger; a converter housing connected to the inlet cone portion and forming an exhaust gas flow passage; at least one catalyst element installed in the exhaust gas flow passage of the converter housing; and a pin member installed inside the inlet cone portion corresponding to the front end surface of the catalyst element.
    Type: Application
    Filed: May 13, 2020
    Publication date: June 10, 2021
    Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION
    Inventor: Hee Chan CHUNG
  • Patent number: 11005007
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: May 11, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
  • Publication number: 20200350742
    Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.
    Type: Application
    Filed: April 30, 2020
    Publication date: November 5, 2020
    Inventors: Hsin-Chan CHUNG, Shou-Lung CHEN
  • Patent number: 10756134
    Abstract: A light-emitting device includes: a substrate comprising a first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area; multiple electrode pads on the multiple semiconductor stacks; and a blocking layer between one of the semiconductor stacks and the substrate. The multiple semiconductor stacks comprises a first semiconductor stack and a second semiconductor stack, and the first semiconductor stack and the second semiconductor stack are independently controlled to emit light.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: August 25, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Chan Chung, Wen-Luh Liao, Shih-Chang Lee
  • Patent number: 10741721
    Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: August 11, 2020
    Assignee: EPISTAR Corporation
    Inventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
  • Patent number: 10700240
    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: June 30, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
  • Publication number: 20200153197
    Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole
    Type: Application
    Filed: November 8, 2019
    Publication date: May 14, 2020
    Inventors: Shou-Lung CHEN, Hsin-Chan CHUNG
  • Publication number: 20200105975
    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
  • Patent number: 10529896
    Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: January 7, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
  • Publication number: 20200006595
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Inventors: Wen-Luh LIAO, Chih-Chiang LU, Shih-Chang LEE, Hung-Ta CHENG, Hsin-Chan CHUNG, Yi-Chieh LIN
  • Patent number: 10461223
    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: October 29, 2019
    Assignee: Epistar Corporation
    Inventors: Yung-Fu Chang, Hsin-Chan Chung, Hung-Ta Cheng, Wen-Luh Liao, Shih-Chang Lee, Chih-Chiang Lu, Yi-Ming Chen, Yao-Ning Chan, Chun-Fu Tsai
  • Patent number: 10453995
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: October 22, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
  • Patent number: 10367118
    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 30, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
  • Publication number: 20190229233
    Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
    Type: Application
    Filed: April 3, 2019
    Publication date: July 25, 2019
    Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
  • Patent number: 10312407
    Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
    Type: Grant
    Filed: July 20, 2018
    Date of Patent: June 4, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
  • Publication number: 20190081213
    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.
    Type: Application
    Filed: September 12, 2018
    Publication date: March 14, 2019
    Inventors: Yung-Fu CHANG, Hsin-Chan CHUNG, Hung-Ta CHENG, Wen-Luh LIAO, Shih-Chang LEE, Chih-Chiang LU, Yi-Ming CHEN, Yao-Ning CHAN, Chun-Fu TSAI
  • Publication number: 20190019920
    Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.
    Type: Application
    Filed: September 19, 2018
    Publication date: January 17, 2019
    Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
  • Publication number: 20180351036
    Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.
    Type: Application
    Filed: July 20, 2018
    Publication date: December 6, 2018
    Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
  • Publication number: 20180311729
    Abstract: A die or piston of a spark plasma sintering apparatus, wherein the die or piston is made from graphite and the outer surfaces of the die or piston are coated with a silicon carbide layer with a thickness of 1 to 10 micrometres, the silicon carbide layer being further optionally coated with one or more other layer(s) made from a carbide other than silicon carbide chosen from hafnium carbide, tantalum carbide and titanium carbide, the other layer(s) each having a thickness of 1 to 10 micrometres. A spark plasma sintering (SPS) apparatus comprising the die and two of the pistons, defining a sintering, densification or assembly chamber capable of receiving a powder to be sintered, a part to be densified, or parts to be assembled. A method of sintering a powder, densifying a part, or assembling two parts by means of a method of spark plasma sintering (SPS) in an oxidising atmosphere, using the spark plasma sintering (SPS) apparatus.
    Type: Application
    Filed: November 3, 2016
    Publication date: November 1, 2018
    Inventors: Alexandre Allemand, Alain Largeteau, Seu U-Chan Chung, Yann Le Petitcorps, Jérôme Roger