Abstract: Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate, each microelectronic device comprising an active surface having bond pads operably coupled to conductive traces extending over a dielectric material to via locations beyond at least one side of the stack, and vias extending through the dielectric materials at the via locations and comprising conductive material in contact with at least some of the conductive traces of each of the two or more electronic devices and extending to exposed conductors of the substrate. Methods of fabrication and related electronic systems are also disclosed.

Abstract: Semiconductor assemblies including thermal management configurations for reducing heat transfer between overlapping devices and associated systems and methods are disclosed herein. A semiconductor assembly may comprise a first device and a second device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the first and second devices. The thermally conductive layer and/or the thermal-insulator interposer may be configured to reduce heat transfer between the first and second devices.

Abstract: Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

Abstract: A semiconductor device assembly that includes a flexible member having a first portion connected to a substrate and a connector attached to a second portion of the flexible member. The connector is electrically connected to the substrate via a conducting layer within the flexible member. The substrate may be a semiconductor device, such as a chip. The connector may be configured to connect the semiconductor device to another semiconductor device assembly or a system board, such as a printed circuit board. A material may encapsulate at least a portion of the substrate of the semiconductor assembly. The semiconductor device assembly may be formed by selectively connecting the flexible member to a first substrate. A second substrate and connector may then be connected to the flexible member. A release layer may be used to release the assembly of the second substrate, flexible member, and connector from the first substrate.

Abstract: A semiconductor device assembly that includes first and second semiconductor devices connected directly to a first side of a substrate and a plurality of interconnects connected to a second side of the substrate. The substrate is configured to enable the first and second semiconductor devices to communicate with each other through the substrate. The substrate may be a silicon substrate that includes complementary metal-oxide-semiconductor (CMOS) circuits. The first semiconductor device may be a processing unit and the second semiconductor device may be a memory device, which may be a high bandwidth memory device. A method of making a semiconductor device assembly includes applying CMOS processing to a silicon substrate, forming back end of line (BEOL) layers on a first side of the substrate, attaching a memory device and a processing unit directly to the BEOL layers, and forming a redistribution layer on the second side of the substrate.

Abstract: Systems, apparatuses, and methods for operating a memory device or devices are described. A memory device or module may introduce latency in commands to coordinate operations at the device or to improve timing or power consumption at the device. For example, a host may issue a command to a memory module, and a component or feature of the memory module may receive the command and modify the command or the timing of its execution in manner that is invisible or non-disruptive to the host while facilitating operations at the memory module. In some examples, components or features of a memory module may be disabled to effect or introduce latency in operation without affecting timing or operation of a host device. A memory module may operate in different modes that allow for different latencies; the use or introduction of latencies may not affect other features or operability of the memory module.

Abstract: Systems, apparatuses, and methods for thermal dissipation on or from an electronic device are described. For example, a memory module may have a printed circuit board (PCB) having an edge connector, a plurality of memory devices disposed on a surface of the PCB, and a tubular heat spreader disposed along an edge of the PCB opposite the edge connector. The tubular heat spreader may comprise a tubular portion open at both ends thereof to permit the through flow of a cooling gas; and two planar elements extending in parallel away from the tubular portion and configured to provide a friction fit with the memory module. Each of the planar elements may be configured to convey thermal energy from the memory module to the tubular portion.

Abstract: Systems, apparatuses, and methods relating to memory devices and packaging are described. A device, such as a dual inline memory module (DIMM) or other electronic device package, may include a substrate with a layer of graphene configured to conduct thermal energy (e.g., heat) away from components mounted or affixed to the substrate. In some examples, a DIMM includes an uppermost or top layer of graphene that is exposed to the air and configured to allow connection of memory devices (e.g., DRAMs) to be soldered to the conducting pads of the substrate. The graphene may be in contact with parts of the memory device other than the electrical connections with the conducting pads and may thus be configured as a heat sink for the device. Other thin, conductive layers of may be used in addition to or as an alternative to graphene. Graphene may be complementary to other heat sink mechanisms.

Abstract: Semiconductor assemblies including thermal management configurations for reducing heat transfer between vertically stacked devices and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise at least one memory device mounted over a logic device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the memory device and the logic device. The thermally conductive layer includes a structure configured to transfer the thermal energy across a horizontal plane. The thermal-insulator interposer includes a structure configured to reduce heat transfer between the logic device and the memory device.

Abstract: Semiconductor assemblies including thermal layers and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise one or more semiconductor devices over a substrate. The substrate includes a thermal layer configured to transfer thermal energy along a lateral plane and across the substrate. The thermal energy is transferred along a non-lateral direction from the semiconductor device to the graphene layer using one or more thermal connectors.

Abstract: Semiconductor assemblies including thermal management configurations for reducing heat transfer between vertically stacked devices and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise at least one memory device mounted over a logic device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the memory device and the logic device. The thermally conductive layer includes a structure configured to transfer the thermal energy across a horizontal plane. The thermal-insulator interposer includes a structure configured to reduce heat transfer between the logic device and the memory device.

Abstract: Semiconductor device packages and associated assemblies are disclosed herein. In some embodiments, the semiconductor device package includes a substrate having a first side and a second side opposite the first side, a first metallization layer positioned at the first side of the substrate, and a second metallization layer in the substrate and electrically coupled to the first metallization layer. The semiconductor device package further includes a metal bump electrically coupled to the first metallization layer and a divot formed at the second side of the substrate and aligned with the metal bump. The divot exposes a portion of the second metallization layer and enables the portion to electrically couple to another semiconductor device package.

Abstract: Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

Abstract: A semiconductor device assembly that includes first and second semiconductor devices connected directly to a first side of a substrate and a plurality of interconnects connected to a second side of the substrate. The substrate is configured to enable the first and second semiconductor devices to communicate with each other through the substrate. The substrate may be a silicon substrate that includes complementary metal-oxide-semiconductor (CMOS) circuits. The first semiconductor device may be a processing unit and the second semiconductor device may be a memory device, which may be a high bandwidth memory device. A method of making a semiconductor device assembly includes applying CMOS processing to a silicon substrate, forming back end of line (BEOL) layers on a first side of the substrate, attaching a memory device and a processing unit directly to the BEOL layers, and forming a redistribution layer on the second side of the substrate.

Abstract: Semiconductor devices including stacked semiconductor dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die coupled to a package substrate and a second semiconductor die stacked over the first semiconductor die and laterally offset from the first semiconductor die. The second semiconductor die can accordingly include an overhang portion that extends beyond a side of the first semiconductor die and faces the package substrate. In some embodiments, the second semiconductor die includes bond pads at the overhang portion that are electrically coupled to the package substrate via conductive features disposed therebetween. In certain embodiments, the first semiconductor die can include second bond pads electrically coupled to the package substrate via wire bonds.

Abstract: Semiconductor devices including a dual-sided redistribution structure and having low-warpage across all temperatures and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die electrically coupled to a first side of a redistribution structure and a second semiconductor die electrically coupled to a second side of the redistribution structure opposite the first side. The semiconductor device also includes a first molded material on the first side, a second molded material on the second side, and conductive columns electrically coupled to the first side and extending through the first molded material. The first and second molded materials can have the same volume and/or coefficients of thermal expansion to inhibit warpage of the semiconductor device.

Abstract: An interposer comprises a semiconductor material and includes cache memory under a location on the interposer for a host device. Memory interface circuitry may also be located under one or more locations on the interposer for memory devices. Microelectronic device assemblies incorporating such an interposer and comprising a host device and multiple memory devices are also disclosed, as are methods of fabricating such microelectronic device assemblies.

Abstract: A semiconductor device assembly that includes a second side of an interposer being connected to a first side of a substrate. A plurality of interconnects may be connected to a second side of the substrate. First and second semiconductor devices are connected directly to the first side of the interposer. The interposer is configured to enable the first semiconductor device and the second semiconductor device to communicate with each other through the interposer. The interposer may be a silicon interposer that includes complementary metal-oxide-semiconductor circuits. The first semiconductor device may be a processing unit and the second semiconductor device may be a memory device, which may be a high bandwidth memory device. A method of making a semiconductor device assembly includes attaching both a memory device and a processing unit directly to a first side of an interposer and connecting a second side of the interposer to a substrate.

Abstract: Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some examples, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected example memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

Abstract: Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some examples, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected example memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.