Abstract: In an output driver circuit and method, a control circuit generates a control signal in response to a current internal data signal. An output driver generates an output data signal in response to the control signal. A pre-emphasis circuit adjusts a current flowing through a node having the control signal generated thereon in response to a previous internal data signal. The pre-emphasis circuit may also adjust the output signal in response to the previous internal data signal.

Abstract: A duty cycle correction circuit may include an error corrector adapted to correct duty cycles of first differential analog clock signals input to a pair of input terminals based on duty cycle correction signals input to a pair of control terminals and to output second differential analog clock signals having corrected duty cycles through a pair of output terminals, an analog to digital buffer adapted to convert the second differential analog clock signals to differential digital clock signals, a duty error detector adapted to detect duty cycles of the differential digital clock signals and to output a N bit digital signal, and a duty error correction signal generator adapted to output differential control current signals having current gains controlled based on the second differential analog clock signals and the N bit digital signal to the pair of control terminals as the duty cycle correction signals.

Abstract: A memory device compensates for delay time variations among multi-bit data. The device includes a first stage and a second stage of data storage units. The first stage of data storage units store first to nth data bits in response to a latch clock signal. The second stage of data storage units store the first to nth data contents output from the first stage of data storage units in response to a reference clock signal. The latch clock signal is obtained by delaying the reference clock signal. The latch clock signal includes first to nth sub latch signals. The sub latch signals are generated at different times according to propagation delay time periods of the corresponding first to nth data contents.

Abstract: Provided are a temperature sensor using a ring oscillator and temperature detection method using the same. One embodiment of the temperature sensor includes a first pulse generator, a second pulse generator, and a counter. The first pulse generator includes a first ring oscillator and generates a first clock signal having a variable period according to a change in temperature. The second pulse generator includes a second ring oscillator and generates a second clock signal having a fixed period. The counter counts a pulse width of the first clock signal as a function of a pulse width of the second clock signal and generates a temperature code.

Abstract: Provided are a temperature sensor for generating a sectional temperature code and sectional temperature detection method. In one embodiment, the temperature sensor includes a plurality of serially connected fixed delay cells inputting a temperature detection signal and delaying the temperature detection signal, a variable delay cell inputting the temperature detection signal and delaying the temperature detection signal; and a sectional discrimination logic unit latching outputs of the fixed delay cells in response to the variable delay cells and generating the sectional temperature code. The sectional discrimination logic unit discriminates the sectional temperatures based on temperatures where an output of the variable delay cell meets each of outputs of the fixed delay cells according to the change in the temperature, and generates temperature codes corresponding to the sectional temperatures.

Abstract: A memory device compensates for delay time variations among multi-bit data. The device includes a first stage and a second stage of data storage units. The first stage of data storage units store first to nth data bits in response to a latch clock signal. The second stage of data storage units store the first to nth data contents output from the first stage of data storage units in response to a reference clock signal. The latch clock signal is obtained by delaying the reference clock signal. The latch clock signal includes first to nth sub latch signals. The sub latch signals are generated at different times according to propagation delay time periods of the corresponding first to nth data contents.

Abstract: A memory device for storage of digitally formatted data can include a Digital to Analog Converter (DAC) circuit that is configured to convert digitally formatted data received from outside the memory device to analog formatted data. An Analog to Digital Converter (ADC) circuit is coupled to the DAC circuit and is configured to convert the analog formatted data to the digitally formatted data for storage in the memory device. Related methods are also disclosed.

Abstract: A duty cycle correction circuit and a delay locked loop (DLL) including the duty cycle correction circuit, are capable of controlling their operation in order to correctly analyze the cause of generation of a duty cycle error when the duty cycle error is generated in the DLL. The duty cycle correction circuit selectively outputs to a DLL core duty cycle offset information for controlling a duty cycle of an internal clock signal synchronized to an external clock signal under the control of a switching control signal. The DLL corrects the duty cycle of a reference clock signal according to the duty cycle offset information, thereby outputting a reference clock signal having a 50% duty cycle.

Abstract: The present invention comprises a memory device for compensating for a clock skew that generates a centering error, and a method of compensating for the clock skew. To compensate for a clock skew that causes a centering error between an external clock signal and an output data signal, the memory device includes a phase detector (PD) and an up-down counter. The PD detects a phase difference between the output data signal and the external clock signal and generates an up signal or a down signal depending on the detected phase difference. The up-down counter is enabled by a calibration signal that directs a compensation of the skew and generates an offset code in response to the up signal or the down signal. The offset code is fed back to a delay locked loop (DLL) circuit and aligns the middle points of the output data signal with the edges of the external clock signal.

Abstract: A duty cycle correction circuit and a delay locked loop (DLL) including the duty cycle correction circuit, are capable of controlling their operation in order to correctly analyze the cause of generation of a duty cycle error when the duty cycle error is generated in the DLL. The duty cycle correction circuit selectively outputs to a DLL core duty cycle offset information for controlling a duty cycle of an internal clock signal synchronized to an external clock signal under the control of a switching control signal. The DLL corrects the duty cycle of a reference clock signal according to the duty cycle offset information, thereby outputting a reference clock signal having a 50% duty cycle.

Abstract: A temperature sensing circuit and method are provided. An example temperature sensing circuit includes a temperature sensing unit that outputs a temperature signal indicating whether the temperature in the semiconductor device is higher or lower than a reference temperature in response to a first current control signal or a second current control signal by using a first current level that is increased when the temperature rises and a second current level that is reduced when the temperature rises. The temperature sensing unit also includes a storage unit that stores and outputs the temperature signal, and a controller that changes the first current level or the second current level in response to the temperature signal output from the storage unit and generates the first current control signal or the second current control signal used to control the reference temperature.

Abstract: In an output driver circuit and method, a control circuit generates a control signal in response to a current internal data signal. An output driver generates an output data signal in response to the control signal. A pre-emphasis circuit adjusts a current flowing through a node having the control signal generated thereon in response to a previous internal data signal. The pre-emphasis circuit may also adjust the output signal in response to the previous internal data signal.

Abstract: A memory device for storage of digitally formatted data can include a Digital to Analog Converter (DAC) circuit that is configured to convert digitally formatted data received from outside the memory device to analog formatted data. An Analog to Digital Converter (ADC) circuit is coupled to the DAC circuit and is configured to convert the analog formatted data to the digitally formatted data for storage in the memory device. Related methods are also disclosed.

Abstract: The invention discloses a semiconductor memory device and a method of testing the same. The semiconductor memory device comprises a memory for receiving or outputting data in response to a first clock signal; an input converting means for converting and outputting input data in response to a second clock signal; and an output converting means for converting and outputting data outputted from the memory in a first test mode and converting and outputting data outputted from the input converting means in a second test mode, in response to the second clock signal. Therefore, in case that the semiconductor memory device has a plurality of frequency regions, it is possible to recognize which frequency regions among a plurality of frequency regions may be suboptimal.

Abstract: A circuit and method of generating delayed tap signals can adjust a delay difference by interpolating two input clock signals as indicated by an offset information signal. In the circuit, first and second tap signals are generated by interpolating first and second clock signals in response to the offset information. A delay difference between output tap signals is adjusted by an amount indicated by the offset information. Thus, tap signals having a fine delay difference can be obtained by adjusting the offset information.

Abstract: A memory device compensates for delay time variations among multi-bit data. The device includes a first stage and a second stage of data storage units. The first stage of data storage units store first to nth data bits in response to a latch clock signal. The second stage of data storage units store the first to nth data contents output from the first stage of data storage units in response to a reference clock signal. The latch clock signal is obtained by delaying the reference clock signal. The latch clock signal includes first to nth sub latch signals. The sub latch signals are generated at different times according to propagation delay time periods of the corresponding first to nth data contents.

Abstract: The output signal from an output driver is compared with first and second reference voltages. A first comparison output signal is generated which exhibits a voltage transition when the output signal reaches the first reference voltage, and a second comparison output signal is generated which exhibits a voltage transition when the output signal reaches the second reference voltage. First and second pulse widths values are then compared. The first pulse width value corresponds to a time delay difference between the voltage transition of the first comparison output signal and the voltage transition of the second comparison output signal, and the second pulse width value corresponds to a target slew rate of the output signal from the output driver. The slew rate of the output signal is decrease when the first pulse width value is smaller than the second pulse width value, and the slew rate of the output signal is increased when the first pulse width value is larger than the second pulse width value.

Abstract: A semiconductor memory device includes a memory cell core having a plurality of memory cells; a data input/output circuit unit, which sets an input/output data width in response to input/output control signals and inputs/outputs data signals through at least some of a plurality of input/output pads; a pipelined circuit unit, which is connected to the data input/output circuit unit through input/output lines and transmits the data signals between the memory cell core and the data input/output circuit unit in synchronization with predetermined clock signals through an input/output path selected in response to pipeline enable signals; and a plurality of selection units, which are connected to the input/output lines through external common data lines and connect some of the input/output lines to the data input/output circuit unit in response to selection control signals.

Abstract: The present invention comprises a memory device for compensating for a clock skew that generates a centering error, and a method of compensating for the clock skew. To compensate for a clock skew that causes a centering error between an external clock signal and an output data signal, the memory device includes a phase detector (PD) and an up-down counter. The PD detects a phase difference between the output data signal and the external clock signal and generates an up signal or a down signal depending on the detected phase difference. The up-down counter is enabled by a calibration signal that directs a compensation of the skew and generates an offset code in response to the up signal or the down signal. The offset code is fed back to a delay locked loop (DLL) circuit and aligns the middle points of the output data signal with the edges of the external clock signal.

Abstract: A temperature sensing circuit and method are provided. An example temperature sensing circuit includes a temperature sensing unit that outputs a temperature signal indicating whether the temperature in the semiconductor device is higher or lower than a reference temperature in response to a first current control signal or a second current control signal by using a first current level that is increased when the temperature rises and a second current level that is reduced when the temperature rises. The temperature sensing unit also includes a storage unit that stores and outputs the temperature signal, and a controller that changes the first current level or the second current level in response to the temperature signal output from the storage unit and generates the first current control signal or the second current control signal used to control the reference temperature.