Abstract: Disclosed is a tip separation apparatus of a welding gun, which mechanically separates consumable tips installed at the end of the welding gun in a robot welding machine. The tip separation apparatus includes tip seating stands coupled to a main plate configured to maintain level, and configured such that each of the tip seating stands has a first insertion hole, into which a corresponding one of tips coupled to fingers of the welding gun is inserted, tip separation units rotatably disposed on bottom surfaces of the tip seating stands and configured to press outer circumferential surfaces of the tips inserted into the first insertion holes of the tip seating stands so as to clamp the tips and to rotate the clamped tips so as to separate the tips from the welding gun, and a housing configured to rotatably receive the tip separation units in a state of being elastically supported.

Abstract: A surface-treated inorganic nanoparticle includes a core including Mania (TiO2); a shell surrounding the core, and including zirconia(ZrO2); and a dispersant including a phosphate functional group, and connected to the shell,

Abstract: A semiconductor device includes an interlayer dielectric layer on a substrate, a first connection line that fills a first trench of the interlayer dielectric layer, the first trench having a first width, and a second connection line that fills a second trench of the interlayer dielectric layer, the second trench having a second width greater than the first width, and the second connection line including a first metal layer that covers an inner sidewall of the second trench, a barrier layer that covers a bottom surface of the second trench, and a second metal layer on the first metal layer and the barrier layer, the first connection line and the first metal layer include a first metal, and the second metal layer includes a second metal different from the first metal.

Abstract: An ion beam deposition method includes placing a substrate into an ion beam deposition apparatus, irradiating an ion beam from an ion beam source toward a target plate, and rotating the target plate during the irradiating of the ion beam. The target plate includes a first region that includes a first material, and a second region that includes a second material different from the first material.

Abstract: An electronic device includes a connector including a pair of terminals connected to a power source, a voltage sensor provided to detect a voltage between the pair of terminals, a communication device provided to perform communication with an external control device through a network, and a controller configured to determine whether the connector is separated from the power source based on a voltage variation between the pair of terminals, control the communication device to request the external control device to cut off power of the power source when the connector is separated from the power source, and control to perform self-discharge.

Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

Abstract: An embodiment of the present invention relates to a porous silicon structure, a porous silicon-carbon composite comprising same, and a negative electrode active material. The porous silicon structure and the porous silicon-carbon composite each have a molar ratio (O/Si) of oxygen (O) atoms to silicon (Si) atoms that satisfies a specific range, and thus, when applied to a negative electrode active material, the porous silicon structure and the porous silicon-carbon composite can have excellent capacity retention and remarkably enhanced discharge capacity and initial efficiency.

Abstract: An embodiment of the present invention relates to a porous silicon composite, a porous silicon-carbon composite comprising same, and an anode active material, wherein the porous silicon composite and the porous silicon-carbon composite each comprise silicon particles and a magnesium compound together and satisfy a molar ratio (O/Si) of oxygen (O) atom to silicon (Si) atom in a specific range, so that the application of the porous silicon composite and the porous silicon-carbon composite to an anode active material leads to an excellent capacity retention rate as well as a significant improvement in discharge capacity and initial efficiency.

Abstract: An embodiment of the present invention relates to: an anode material for a lithium ion secondary battery, comprising a silicon-silicon carbide composite; a preparation method therefor; and a lithium ion secondary battery comprising same, and, more specifically, the anode material for a lithium ion secondary battery, according to the embodiment, is an anode material, which comprises a silicon-silicon carbide composite containing silicon particles and silicon carbide particles, wherein the silicon particles and the silicon carbide particles in the silicon-silicon carbide composite are dispersed from each other and the amount of the silicon carbide particles satisfies a specific range, and thus high capacity and excellent cycle characteristics can be implemented while a low volume expansivity is maintained.

Abstract: The present invention relates to a porous silicon-based composite, a preparation method therefor, and an anode active material comprising same, and, more specifically, the porous silicon-based composite comprises silicon particles and fluoride, and thus a porous silicon-based composite with excellent selective etching efficiency can be obtained, and the anode active material comprising same can further improve a discharge capacity and a capacity retention while holding the excellent initial efficiency of a secondary battery.

Abstract: The present invention provides a porous silicon-carbon composite, a manufacturing method therefor, and a negative electrode active material comprising same. Since the porous silicon-carbon composite of the present invention includes silicon particles, magnesium fluoride, and carbon, the initial efficiency and capacity retention ratio of a secondary battery can be further increased as well as the discharge capacity thereof.

Abstract: The present invention relates to a molded body, a sandwich panel using same as a core layer, and a method for manufacturing same, the molded body having a non-woven fiber aggregate structure comprising two or more non-woven fiber aggregates. The molded body comprises a polyester-based fiber and a polypropylene composite fiber, wherein the polypropylene composite fiber comprises polypropylene and maleic anhydride polyolefin.

Abstract: An embodiment of the present invention relates to a porous silicon-based carbon composite, a method for preparing same, and a negative electrode active material comprising same. The porous silicon-based carbon composite according to an embodiment comprises silicon particles capable of intercalating and deintercalating lithium, a magnesium compound, and carbon, and satisfies a molar ratio (Mg/Si) of magnesium atoms to silicon atoms present in the composite of 0.02-0.30 and a molar ratio (O/Si) of oxygen atoms to silicon atoms in the composite of 0.40-0.90. Thus, when the porous silicon-based carbon composite is applied to a negative electrode active material, initial efficiency and capacity retention as well as discharge capacity can be enhanced.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes a substrate having a first via hole, an insulation interlayer formed on the substrate and having a first bonding pad in an outer surface thereof and a second via hole connected to the first via hole and exposing the first bonding pad, and a plug structure formed within the first and second via holes to be connected to the first bonding pad. The second semiconductor chip includes a second bonding pad bonded to the plug structure which is exposed from a surface of the substrate of the first semiconductor chip.

Abstract: The present invention relates to a cable comprising a crosslinked layer obtained from a polymer composition, the polymer composition comprising: a polymer blend comprising an ethylene vinyl acetate (EVA) copolymer, nitrile rubber (NBR), and an ethylene-methyl acrylate (EMA) copolymer; a crosslinking agent; and a flame-retardant filler.

Abstract: A bevel etching apparatus includes a chuck plate that is configured to receive a substrate, a lower ring surrounding a circumference of the chuck plate, a cover plate on the chuck plate, and an upper ring surrounding a circumference of the cover plate. The lower ring includes a ring base and a protrusion that extends upwardly from an edge of the ring base and surrounds a lower portion of a sidewall of the substrate.

Abstract: An imprint device according to an embodiment includes: a stage, which supports a substrate; a press roller, which presses a film with respect to the substrate; a first load cell and a second load cell, which are disposed corresponding to opposite ends of the press roller, respectively; and a controller, which monitors a release state of the film based on an output of the first load cell and an output of the second load cell.

Abstract: Laser cutting a dieboard using a laser cutting system, including: setting a width of material to be removed from the dieboard using the laser cutting system; capturing an image of the width of the material removed by the laser cutting system using at least one image capture unit; measuring the captured width of the material captured on the image using the at least one image capture unit; and comparing the measured width of the material to the set width of the material, and moving a laser head of the laser cutting system up and down to adjust a focal length of the laser cutting system and moving the laser head of the laser cutting system sideways to adjust a speed of the laser head, until the measured width and the set width are substantially similar.

Abstract: A semiconductor device includes a conductive component on a substrate, a passivation layer on the substrate and including an opening that exposes at least a portion of the conductive component, and a pad structure in the opening and located on the passivation layer, the pad structure being electrically connected to the conductive component. The pad structure includes a lower conductive layer conformally extending on an inner sidewall of the opening, the lower conductive layer including a conductive barrier layer, a first seed layer, an etch stop layer, and a second seed layer that are sequentially stacked, a first pad layer on the lower conductive layer and at least partially filling the opening, and a second pad layer on the first pad layer and being in contact with a peripheral portion of the lower conductive layer located on the top surface of the passivation layer.

Abstract: A mixed silver powder and a conductive paste comprising the powder are disclosed. The mixed silver powder is obtained by mixing two or more spherical silver powders having different properties from each other. The mixed powder may minimize the disadvantages of the respective types of the two or more powders and maximize the advantages thereof, thereby improving the characteristics of products. In addition, by comprehensively controlling the particle size distribution of surface-treated mixed silver powder and the particle diameter and specific gravity of primary particles, a high-density conductor pattern, a precise line pattern, and the suppression of aggregation over time can be simultaneously achieved.