Abstract: An apparatus for a profile including an upper rib and a lower rib, including: at least one support beam placed between the upper rib and the lower rib, wherein the upper rib provides a surface on which to apply adhesive to attach a front panel to the profile, wherein the at least one support beam attaches to the profile to provide an additional surface on which to apply the adhesive to attach the front panel to the profile.

Abstract: A silicon-carbon composite of the present invention comprises a lithium silicon composite oxide and carbon, wherein the lithium silicon composite oxide includes silicon particles, silicon oxide, magnesium silicate, and a lithium silicon compound. By comprising two or more carbon layers including a first carbon layer and a second carbon layer, the silicon-carbon composite can improve the performance of a secondary battery, such as slurry stability and initial charge/discharge characteristics, when used as a negative electrode active material of the secondary battery. In addition, the first carbon layer and the second carbon layer of the silicon-carbon composite satisfy specific thickness ranges, and thus, the silicon-carbon composite can further improve the performance of a secondary battery, such as capacity, cycle characteristics, and initial charge/discharge characteristics, when used as a negative electrode active material of the secondary battery.

Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

Abstract: The present invention relates to a porous silicon-carbon composite having a core-shell structure, a preparing method therefor, and an anode active material comprising same, wherein the core comprises silicon particles and the shell comprises two or more carbon layers including a first carbon layer and a second carbon layer, so that the application of the composite as an anode active material for a secondary battery can enhance the discharge capacity, initial efficiency, and capacity retention rate of the secondary battery. In addition, the preparing method for the porous silicon-carbon composite having the core-shell structure enables the mass production through a continuous process with minimized steps.

Abstract: A plasma shield assembly may include a guide component including first through holes connected to plasma generators that generate radicals using process gas, and a shield component detachably coupled to the guide component and disposed on a lower surface of the guide component, and including second through holes aligned with the first through holes to pass the radicals from the first through holes. The shield component may be spaced apart from the lower surface of the guide component with a gap formed between the shield component and the guide component. Bumper rings disposed adjacent to the second through holes to prevent the radicals from entering the gap.

Abstract: The present disclosure provides a semiconductor device manufacturing method that includes forming a lower chip and an upper chip, and bonding the lower chip and the upper chip to each other. The forming of the lower chip includes providing a lower substrate, sequentially forming a lower interlayer insulating film and a pre-lower adhesive film, etching portions of the pre-lower adhesive film and the lower interlayer insulating film to form a lower trench, forming, using a sputtering process, a first lower seed film and a second lower seed film. The forming of the upper chip includes providing an upper substrate, sequentially forming an upper interlayer insulating film and a pre-upper adhesive film, etching portions of the pre-upper adhesive film and the upper interlayer insulating film to form an upper trench, forming, using the sputtering process, a first upper seed film and a second upper seed film.

Abstract: Method and system, including: a strip of metallic material used by a bender to produce the 3-D signage; a sanding unit coupled to the bender and configured to sand away any dirt, oil, or other undesirable material attaching to the strip of metallic material; and a controller configured to make a measurement of how fast the strip of metallic material is feeding into the bender, and to control an operating speed of the sanding unit based on the measurement.

Abstract: An apparatus for fabricating a display panel includes: a sample module in which a switching transistor is formed, a measurement module having input/output terminals electrically connected to the switching transistor of the sample module, a characteristic detecting unit configured to detect primary operation characteristic information including an output current, an output voltage value and a threshold voltage range of the switching transistor, a model learning unit configured to correct at least one of the output current, the output voltage value and the threshold voltage range in the primary operation characteristic information using a learning program included in at least one learning model, and to extract correction results as learning result data, and a correction learning unit configured to classify the learning result data containing the primary operation characteristic information according to fabrication characteristics of sample switching transistors and a list of classifications.

Abstract: The described technology relates generally to a material for a metal line in a semiconductor device including an alloy including aluminum as a main material, copper, and an element X, wherein the element X has 1) a coefficient of thermal expansion (CTE) of greater than about 0.55 ppm/K and less than about 5 ppm/K, 2) a melting point (MP) of greater than about 3000° C., and 3) electronegativity of greater than about 2.2, a metal line in a semiconductor device including the alloy, and a method of forming a metal line in a semiconductor device.

Abstract: Disclosed is a tip separation apparatus of a welding gun, which mechanically separates consumable tips installed at the end of the welding gun in a robot welding machine. The tip separation apparatus includes tip seating stands coupled to a main plate configured to maintain level, and configured such that each of the tip seating stands has a first insertion hole, into which a corresponding one of tips coupled to fingers of the welding gun is inserted, tip separation units rotatably disposed on bottom surfaces of the tip seating stands and configured to press outer circumferential surfaces of the tips inserted into the first insertion holes of the tip seating stands so as to clamp the tips and to rotate the clamped tips so as to separate the tips from the welding gun, and a housing configured to rotatably receive the tip separation units in a state of being elastically supported.

Abstract: A semiconductor device includes an interlayer dielectric layer on a substrate, a first connection line that fills a first trench of the interlayer dielectric layer, the first trench having a first width, and a second connection line that fills a second trench of the interlayer dielectric layer, the second trench having a second width greater than the first width, and the second connection line including a first metal layer that covers an inner sidewall of the second trench, a barrier layer that covers a bottom surface of the second trench, and a second metal layer on the first metal layer and the barrier layer, the first connection line and the first metal layer include a first metal, and the second metal layer includes a second metal different from the first metal.

Abstract: An ion beam deposition method includes placing a substrate into an ion beam deposition apparatus, irradiating an ion beam from an ion beam source toward a target plate, and rotating the target plate during the irradiating of the ion beam. The target plate includes a first region that includes a first material, and a second region that includes a second material different from the first material.

Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

Abstract: An embodiment of the present invention relates to a porous silicon structure, a porous silicon-carbon composite comprising same, and a negative electrode active material. The porous silicon structure and the porous silicon-carbon composite each have a molar ratio (O/Si) of oxygen (O) atoms to silicon (Si) atoms that satisfies a specific range, and thus, when applied to a negative electrode active material, the porous silicon structure and the porous silicon-carbon composite can have excellent capacity retention and remarkably enhanced discharge capacity and initial efficiency.

Abstract: An embodiment of the present invention relates to a porous silicon composite, a porous silicon-carbon composite comprising same, and an anode active material, wherein the porous silicon composite and the porous silicon-carbon composite each comprise silicon particles and a magnesium compound together and satisfy a molar ratio (O/Si) of oxygen (O) atom to silicon (Si) atom in a specific range, so that the application of the porous silicon composite and the porous silicon-carbon composite to an anode active material leads to an excellent capacity retention rate as well as a significant improvement in discharge capacity and initial efficiency.

Abstract: An embodiment of the present invention relates to: an anode material for a lithium ion secondary battery, comprising a silicon-silicon carbide composite; a preparation method therefor; and a lithium ion secondary battery comprising same, and, more specifically, the anode material for a lithium ion secondary battery, according to the embodiment, is an anode material, which comprises a silicon-silicon carbide composite containing silicon particles and silicon carbide particles, wherein the silicon particles and the silicon carbide particles in the silicon-silicon carbide composite are dispersed from each other and the amount of the silicon carbide particles satisfies a specific range, and thus high capacity and excellent cycle characteristics can be implemented while a low volume expansivity is maintained.

Abstract: The present invention relates to a porous silicon-based composite, a preparation method therefor, and an anode active material comprising same, and, more specifically, the porous silicon-based composite comprises silicon particles and fluoride, and thus a porous silicon-based composite with excellent selective etching efficiency can be obtained, and the anode active material comprising same can further improve a discharge capacity and a capacity retention while holding the excellent initial efficiency of a secondary battery.

Abstract: The present invention provides a porous silicon-carbon composite, a manufacturing method therefor, and a negative electrode active material comprising same. Since the porous silicon-carbon composite of the present invention includes silicon particles, magnesium fluoride, and carbon, the initial efficiency and capacity retention ratio of a secondary battery can be further increased as well as the discharge capacity thereof.

Abstract: The present invention relates to a molded body, a sandwich panel using same as a core layer, and a method for manufacturing same, the molded body having a non-woven fiber aggregate structure comprising two or more non-woven fiber aggregates. The molded body comprises a polyester-based fiber and a polypropylene composite fiber, wherein the polypropylene composite fiber comprises polypropylene and maleic anhydride polyolefin.

Abstract: An embodiment of the present invention relates to a porous silicon-based carbon composite, a method for preparing same, and a negative electrode active material comprising same. The porous silicon-based carbon composite according to an embodiment comprises silicon particles capable of intercalating and deintercalating lithium, a magnesium compound, and carbon, and satisfies a molar ratio (Mg/Si) of magnesium atoms to silicon atoms present in the composite of 0.02-0.30 and a molar ratio (O/Si) of oxygen atoms to silicon atoms in the composite of 0.40-0.90. Thus, when the porous silicon-based carbon composite is applied to a negative electrode active material, initial efficiency and capacity retention as well as discharge capacity can be enhanced.