Abstract: The present invention relates to a porous silicon-based composite, a preparation method therefor, and an anode active material comprising same, and, more specifically, the porous silicon-based composite comprises silicon particles and fluoride, and thus a porous silicon-based composite with excellent selective etching efficiency can be obtained, and the anode active material comprising same can further improve a discharge capacity and a capacity retention while holding the excellent initial efficiency of a secondary battery.

Abstract: The present invention provides a porous silicon-carbon composite, a manufacturing method therefor, and a negative electrode active material comprising same. Since the porous silicon-carbon composite of the present invention includes silicon particles, magnesium fluoride, and carbon, the initial efficiency and capacity retention ratio of a secondary battery can be further increased as well as the discharge capacity thereof.

Abstract: The present invention relates to a molded body, a sandwich panel using same as a core layer, and a method for manufacturing same, the molded body having a non-woven fiber aggregate structure comprising two or more non-woven fiber aggregates. The molded body comprises a polyester-based fiber and a polypropylene composite fiber, wherein the polypropylene composite fiber comprises polypropylene and maleic anhydride polyolefin.

Abstract: An embodiment of the present invention relates to a porous silicon-based carbon composite, a method for preparing same, and a negative electrode active material comprising same. The porous silicon-based carbon composite according to an embodiment comprises silicon particles capable of intercalating and deintercalating lithium, a magnesium compound, and carbon, and satisfies a molar ratio (Mg/Si) of magnesium atoms to silicon atoms present in the composite of 0.02-0.30 and a molar ratio (O/Si) of oxygen atoms to silicon atoms in the composite of 0.40-0.90. Thus, when the porous silicon-based carbon composite is applied to a negative electrode active material, initial efficiency and capacity retention as well as discharge capacity can be enhanced.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes a substrate having a first via hole, an insulation interlayer formed on the substrate and having a first bonding pad in an outer surface thereof and a second via hole connected to the first via hole and exposing the first bonding pad, and a plug structure formed within the first and second via holes to be connected to the first bonding pad. The second semiconductor chip includes a second bonding pad bonded to the plug structure which is exposed from a surface of the substrate of the first semiconductor chip.

Abstract: The present invention relates to a cable comprising a crosslinked layer obtained from a polymer composition, the polymer composition comprising: a polymer blend comprising an ethylene vinyl acetate (EVA) copolymer, nitrile rubber (NBR), and an ethylene-methyl acrylate (EMA) copolymer; a crosslinking agent; and a flame-retardant filler.

Abstract: A bevel etching apparatus includes a chuck plate that is configured to receive a substrate, a lower ring surrounding a circumference of the chuck plate, a cover plate on the chuck plate, and an upper ring surrounding a circumference of the cover plate. The lower ring includes a ring base and a protrusion that extends upwardly from an edge of the ring base and surrounds a lower portion of a sidewall of the substrate.

Abstract: An imprint device according to an embodiment includes: a stage, which supports a substrate; a press roller, which presses a film with respect to the substrate; a first load cell and a second load cell, which are disposed corresponding to opposite ends of the press roller, respectively; and a controller, which monitors a release state of the film based on an output of the first load cell and an output of the second load cell.

Abstract: Laser cutting a dieboard using a laser cutting system, including: setting a width of material to be removed from the dieboard using the laser cutting system; capturing an image of the width of the material removed by the laser cutting system using at least one image capture unit; measuring the captured width of the material captured on the image using the at least one image capture unit; and comparing the measured width of the material to the set width of the material, and moving a laser head of the laser cutting system up and down to adjust a focal length of the laser cutting system and moving the laser head of the laser cutting system sideways to adjust a speed of the laser head, until the measured width and the set width are substantially similar.

Abstract: A semiconductor device includes a conductive component on a substrate, a passivation layer on the substrate and including an opening that exposes at least a portion of the conductive component, and a pad structure in the opening and located on the passivation layer, the pad structure being electrically connected to the conductive component. The pad structure includes a lower conductive layer conformally extending on an inner sidewall of the opening, the lower conductive layer including a conductive barrier layer, a first seed layer, an etch stop layer, and a second seed layer that are sequentially stacked, a first pad layer on the lower conductive layer and at least partially filling the opening, and a second pad layer on the first pad layer and being in contact with a peripheral portion of the lower conductive layer located on the top surface of the passivation layer.

Abstract: A mixed silver powder and a conductive paste comprising the powder are disclosed. The mixed silver powder is obtained by mixing two or more spherical silver powders having different properties from each other. The mixed powder may minimize the disadvantages of the respective types of the two or more powders and maximize the advantages thereof, thereby improving the characteristics of products. In addition, by comprehensively controlling the particle size distribution of surface-treated mixed silver powder and the particle diameter and specific gravity of primary particles, a high-density conductor pattern, a precise line pattern, and the suppression of aggregation over time can be simultaneously achieved.

Abstract: An embodiment of the present invention relates to a silicon-based carbon composite, a preparation method therefor, and an anode active material for a lithium secondary battery, comprising same, and, more specifically, the silicon-based carbon composite of the present invention is a silicon-based carbon composite having a core-shell structure, wherein the core comprises silicon, silicon oxide compound and magnesium silicate, the shell comprises at least two carbon layers comprising a first carbon layer and a second carbon layer, and the second carbon layer is reduced graphene oxide, and thus, during application of the silicon-based carbon composite to an anode active material for a secondary battery, the charge/discharge capacity, initial charge/discharge efficiency and capacity retention of the secondary battery can be improved.

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.

Abstract: Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

Abstract: A cable is provided having at least one elongated conductor surrounded by at least one cross-linked layer, said layer being obtained from a polymer composition comprising a polymer, a crosslinking agent, and an amine as co-crosslinking agent, wherein said amine has a nucleophilic value (N) of 14 or more.

Abstract: A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.

Abstract: The present invention provides a silicon-silicon composite oxide-carbon composite, a method for preparing same, and a negative electrode active material for a lithium secondary battery, comprising same. More particularly, the silicon-silicon composite oxide-carbon composite of the present invention has a core-shell structure wherein the core comprises silicon, a silicon oxide compound, and magnesium silicate, and the shell comprises a carbon layer. In addition, by having a specific range of span values through the adjustment of particle size distribution of the composite, when used as a negative electrode active material of a secondary battery, the composite can improve not only the capacity of the secondary battery but also the cycle characteristics and initial efficiency thereof.

Abstract: Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

Abstract: The present disclosure relates to a manufacturing method of a vehicle seatback cover, comprising a lightweight composite manufacturing step of manufacturing a lightweight composite using a reinforcing fiber and a thermoplastic resin fiber, a lightweight composite forming step of forming the lightweight composite into a vehicle seatback cover shape and preparing a vehicle seatback cover material, and a carpet bonding step of bonding the vehicle seatback cover material and a carpet material.

Abstract: A semiconductor device includes an interlayer dielectric layer on a substrate, a first connection line that fills a first trench of the interlayer dielectric layer, the first trench having a first width, and a second connection line that fills a second trench of the interlayer dielectric layer, the second trench having a second width greater than the first width, and the second connection line including a first metal layer that covers an inner sidewall of the second trench, a barrier layer that covers a bottom surface of the second trench, and a second metal layer on the first metal layer and the barrier layer, the first connection line and the first metal layer include a first metal, and the second metal layer includes a second metal different from the first metal.