Patents by Inventor Chan Liu

Chan Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110147720
    Abstract: The present invention relates to novel quinoxaline derivatives and their use in an organic light-emitting diode device. The quinoxaline derivative is of luminescence and rigidity, can increase glass transition temperature (Tg) and has better thermal stability, and thus can be used as a hole transporting layer, a host or guest of an emitting layer or an electron transporting layer of an organic light-emitting diode device.
    Type: Application
    Filed: June 8, 2010
    Publication date: June 23, 2011
    Inventors: Min Sheng Chen, Yue Lin Du, Hsiao Chan Liu
  • Publication number: 20060223018
    Abstract: A safety lighter comprises a main body having a sealed pressurized storage chamber for storing fuel for supplying the fuel; a fuel spraying head protrudes from the pressurized storage chamber for opening and closing the pressurized storage chamber; wherein in a first position of the fuel spraying head, the pressurized storage chamber is opened for spraying fuel; when in a second position of the fuel spraying head, the pressurized storage chamber is closed; a fuel supply device installed in the main body; the fuel supply device being capable of inserting into the pressurized storage chamber; a manual igniter installed aside a spraying head of the fuel supply device; and a far end control device installed at or near a bottom of the main body; for controlling the position of the fuel spraying head so as to open or close the fuel supply device.
    Type: Application
    Filed: April 1, 2005
    Publication date: October 5, 2006
    Inventor: Chan Liu
  • Patent number: 6031256
    Abstract: Structure of a wide voltage operation regime double heterojunction bipolar transistor, specifically a modified InGaP/GaAs double heterojunction bipolar transistor featuring a very broad collector-emitter voltage operation range, an invention of high speed, low power consumption and high breakdown voltage rated microwave power transistor. Unique in the incorporation of In.sub.0.49 Ga.sub.0.51 P collector layer, GaAs delta-doping sheet and undoped GaAs spacer in the collector zone. The introduction of a spacer with a delta doping sheet into the effective base-collector heterojunction serves to eliminate potential spike from appearing at base-collector interfacing any more, thus effectively precludes electron blocking effect. In the emitter zone the inventive design comprises a five-period In.sub.0.49 Ga.sub.0.
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: February 29, 2000
    Assignee: National Science Council of Republic of China
    Inventors: Wen-Chan Liu, Shiou-Ying Cheng