Patents by Inventor Chan-Sik Park

Chan-Sik Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110042890
    Abstract: Disclosed is an image forming apparatus incorporating a discharging unit that discharges a printing medium outside the housing of the image forming apparatus, and which stacks the discharged printing medium. The discharging unit includes a discharging part arranged on the transportation path of the printing medium in the housing, a stacking lever rotatably supported on the housing and a driving unit that drives the stacking lever to rotate. The discharging part discharges a printing medium outside the housing, and stacks the discharged printing medium on a stacking unit provided outside the housing. The stacking lever guides the stacking of the printing medium in the stacking unit. A control unit may be provided to control the driving unit so as to vary the revolution position of the stacking lever based on the discharged position of the printing medium discharged by the discharging part.
    Type: Application
    Filed: May 26, 2010
    Publication date: February 24, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Duk-Young LEE, Soo-Yong Jung, Su-Hwan Kim, Chan-Sik Park
  • Publication number: 20100297839
    Abstract: A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and removing the mask layer pattern. The method further includes growing a silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from one another on the first and second regions.
    Type: Application
    Filed: August 5, 2010
    Publication date: November 25, 2010
    Inventor: Chan-Sik Park
  • Patent number: 7776761
    Abstract: A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and removing the mask layer pattern. The method further includes growing a silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from one another on the first and second regions.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: August 17, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chan-Sik Park
  • Patent number: 7641921
    Abstract: The composition and process for preparing an anti-anal fistula composition which comprises providing a predetermined effective amount of natural substances of the genera Safflower, Notoginseng Radix, Lightyellow Sophora, Elecampane Redix, Rumex, Pine Resin, Sassafras Tree, Glycyrrhizae Radix, Testudinis Carapax, Rhei Rhizoma, Ephedrae Herba, Natrii Sulfas, Menthae Herba, Pasoniae Radix, Acontii Tuber, Corni Fructus, Gypsum, and Pelladendri Radix in an aqueous medium to form an initial mixture, extracting the initial mixture with water at a temperature of about 65°-75° C. for 1-2 hours to produce an aqueous mixture, filtering the aqueous mixture to produce a filtrate, and evaporating the filtrate to a moisture content of 30% to produce an extract which can be used as a treatment for hemorrhoid diseases including anal fistula.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: January 5, 2010
    Inventor: Chan Sik Park
  • Publication number: 20090324112
    Abstract: An image encoding apparatus is provided, including a lossless compression unit that performs lossless compression on deblocked data on a window basis during encoding of image data; a lossless compression controller that determines a relation between the deblocked data and the losslessly compressed deblocked data and determines a size of the window; a cache controller that selects losslessly compressed deblocked data corresponding to reference data used for motion compensation or motion estimation from the losslessly compressed deblocked data, based on the relation between the deblocked data and losslessly compressed deblocked data; a lossless compression reconstruction unit that decodes the selected losslessly compressed deblocked data to reconstruct the reference data; and a cache storage unit that stores the reconstructed reference data.
    Type: Application
    Filed: June 30, 2009
    Publication date: December 31, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Chan-sik PARK
  • Publication number: 20080089595
    Abstract: Provided is a method of and apparatus for compressing/decompressing data, in which lossless compression is applied to a raw data transfer mode in order to decompress data into high-quality data in a encoder/decoder (CODEC) system. A method of encoding data includes performing intraprediction within a current frame and performing interprediction between the current frame and a reference frame, applying lossless compression in input data in a raw data transfer mode in which raw data is transferred within an input frame, and comparing a predetermined parameter generated by the intraprediction and the interprediction with a predetermined parameter generated by the lossless compression, in order to select one of a prediction mode and a lossless compression mode.
    Type: Application
    Filed: September 10, 2007
    Publication date: April 17, 2008
    Applicant: Samsung Electronics Co.,Ltd.
    Inventor: Chan-sik Park
  • Publication number: 20080062188
    Abstract: A method of and apparatus are provided for saving video data.
    Type: Application
    Filed: April 19, 2007
    Publication date: March 13, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Keun-kyoung PARK, Chan-sik PARK
  • Publication number: 20070122981
    Abstract: A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and removing the mask layer pattern. The method further includes growing a silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from one another on the first and second regions.
    Type: Application
    Filed: June 28, 2006
    Publication date: May 31, 2007
    Applicant: Samsung Electronics Co., LTD.
    Inventor: Chan-Sik Park
  • Publication number: 20050276327
    Abstract: A method of and an apparatus for predicting a motion. The method of predicting a motion using a hierarchical motion estimation (ME) method includes: compensating for the motion using data stored in an internal memory that has been used in the motion estimation method, without accessing data stored in an external memory. Accordingly, the internal memory for use in the ME is used instead of accessing to the external memory, whereby a burden of a bus is reduced and a processing time for the MC can be reduced.
    Type: Application
    Filed: May 12, 2005
    Publication date: December 15, 2005
    Applicant: Samsung Electronics Co., LTD
    Inventors: Nam-suk Lee, Jang-ook Lee, Chan-sik Park, Jae-hun Lee
  • Publication number: 20050276330
    Abstract: A method and apparatus are provided for sub-pixel motion estimation which performs sub-pixel motion estimation in which the precision of a difference between a pixel value of a block to be searched and a pixel value of a block of a search area, i.e., the number of bits of the difference, is reduced. The method for sub-pixel motion estimation in inter-prediction includes (a) determining one integer pixel corresponding to an estimated block by performing integer-pixel motion estimation, (b) receiving a value of a sub-pixel that is adjacent to the determined integer pixel and a value of an integer pixel of a block to be searched, (c) reducing a difference between the value of the sub-pixel and the value of the integer pixel and reducing a bit precision of the difference, and (d) calculating a similarity using the difference whose bit precision is reduced.
    Type: Application
    Filed: March 21, 2005
    Publication date: December 15, 2005
    Inventors: Chan-sik Park, Jae-hun Lee, Nam-suk Lee
  • Publication number: 20050238102
    Abstract: A motion estimation apparatus and method for efficient hierarchical motion estimation. The motion estimation apparatus includes a pixel data storing unit storing pixel data of a block to search for and pixel data of blocks in a search area a two-dimensional processing element array receiving pixel data from the pixel data storing unit and calculating degrees of similarity between the block to search for and the blocks in the search area, a merging and comparing unit merging the degrees of similarity, generating degrees of similarity for blocks of various sizes, comparing the generated degrees of similarity, and outputting motion vectors for the blocks of various sizes, and an address controlling unit controlling an address of the pixel data storing unit such that the pixel data of the pixel data storing unit can be sequentially transmitted to the two-dimensional processing element array.
    Type: Application
    Filed: April 22, 2005
    Publication date: October 27, 2005
    Applicant: Samsung Electronics Co., LTD.
    Inventors: Jae-hun Lee, Chan-sik Park
  • Patent number: 6916494
    Abstract: The composition and process for preparing an anti-hemorrhoid composition which comprises providing a predetermined effective amount of natural substances of the genera Glycyrrhizae Radix, Testudinis Carapax, Cervi Parvum Cornu, Rhei Rhizoma, Ephedrae Herba, Natrii Sulfas, Moutan Radicis Cortex, Menthae Herba, Pinelliae Rhizoma, Pasoniae Radix, Acontii Tuber, Corni Fructus, Gypsum, Ginseng Radix, Cinnabaris, Talcum and Pelladendri Radix in an aqueous medium to form an initial mixture, extracting the initial mixture with water at a temperature of about 70°-80° C. for 1-2 hours to produce an aqueous mixture, filtering the aqueous mixture to produce a filtrate, and evaporating the filtrate to a moisture content of 30% to produce an extract which can be used as a treatment for hemorrhoid diseases.
    Type: Grant
    Filed: October 21, 2002
    Date of Patent: July 12, 2005
    Inventor: Chan Sik Park
  • Publication number: 20040076688
    Abstract: The composition and process for preparing an anti-hemorrhoid composition which comprises providing a predetermined effective amount of natural substances of the genera Glycyrrhizae Radix, Testudinis Carapax, Cervi Parvum Cornu, Rhei Rhizoma, Ephedrae Herba, Natrii Sulfas, Moutan Radicis Cortx, Menthae Herba, Pinelliae Rhizoma, Pasoniae Radix, Acontii Tuber, Corni Fructus, Gypsum, Ginseng Radix, Cinnabaris, Talcum and Pelladendri Radix in an aqueous medium to form an initial mixture, extracting the initial mixture with water at a temperature of about 70°-80° C. for 1-2 hours to produce an aqueous mixture, filtering the aqueous mixture to produce a filtrate, and evaporating the filtrate to a moisture content of 30% to produce an extract which can be used as a treatment for hemorrhoid diseases.
    Type: Application
    Filed: October 21, 2002
    Publication date: April 22, 2004
    Inventor: Chan Sik Park
  • Publication number: 20010036751
    Abstract: A process for forming oxide layer on a wafer, which comprises a wet oxidation step using a pyrogenic steam as an oxidizing agent. The present invention comprises a flowing of an inert gas throughout the process including the wet oxidation step. The process allows an easy control of the oxide layer growth rate and oxide layer thickness, a formation of a more uniform oxide layer, and an improvement in the quality of the oxide layer.
    Type: Application
    Filed: June 4, 2001
    Publication date: November 1, 2001
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chan-Sik Park, Sang-Woon Kim, Chung-Hwan Kwon, Sae-Hyoung Ryu
  • Patent number: 6275315
    Abstract: An apparatus for compensating for dispersion of an optical fiber in an optical line, which compensates for dispersion generated in the optical fiber when an optical signal produced by an optical transmitter is transmitted to an optical receiver via the optical line, is provided. The apparatus includes a dispersion compensation fiber for compensating an optical signal produced by an optical transmitter in order to predict and compensate for dispersion generated in the optical line, a dispersion compensation filter for controlling the dispersion value of the optical signal dispersion-compensated by the dispersion compensation fiber, to gain zero overall dispersion, and an optical amplifier for amplifying a signal having a dispersion value adjusted by the dispersion compensation filter and outputting the result to the optical line. Accordingly, it is easy to zero a dispersion value of an optical fiber in the optical line by regulation of the dispersion compensation fiber and filter.
    Type: Grant
    Filed: July 2, 1998
    Date of Patent: August 14, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan-sik Park, Jin-han Kim
  • Patent number: 6256325
    Abstract: A transmission apparatus for half duplex communication using HDLC is provided, in which a simple logic circuit is added to a general HDLC controller to transmit a frame, adding flags before and after the frame all the time, without modification of program even when a transmission speed is changed, thereby enabling rapid and reliable communications.
    Type: Grant
    Filed: June 3, 1998
    Date of Patent: July 3, 2001
    Assignee: SamSung Electronics Co., Ltd.
    Inventor: Chan-Sik Park
  • Patent number: 6211010
    Abstract: A method of forming a hemispherical grain includes cleaning a polysilicon layer of a native oxide in-situ in the processing chamber of the HSG growth reactor. Such a native oxide adversely affects the growing of HSGs from seeds during the thermal treatment performed in the processing chamber. The cleaning is carried out by dry etching the polysilicon layer with plasma. The plasma may be produced from a mixture of fluorine and inert gases having a volumetric ratio within the range of 0.2:100 to 25:100. Such a plasma can be formed by ionizing the gas with an RF power within a range of 20 to 500 Watts. An advantage of using plasma etching to clean the polysilicon of a native oxide is that the plasma etching is an anisotropic process. The present invention is thus particularly useful in the manufacture of a DRAM capacitor.
    Type: Grant
    Filed: December 1, 1999
    Date of Patent: April 3, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang Hyeok Lee, Se Hyoung Ryu, Chan Sik Park, Eung Yong Ahn, Yun Young Kwon
  • Patent number: 6185358
    Abstract: An optical attenuator and process for manufacturing optical attenuators. The optical attenuator includes an optical fiber installed in a tube so as not to be influenced by a change in external circumstances, and at least one grating formed in the optical fiber, for breaking total reflection conditions by varying refractive indices of a core layer and a clad layer of the optical fiber in order to attenuate incident light during optical transmission.
    Type: Grant
    Filed: December 3, 1997
    Date of Patent: February 6, 2001
    Assignee: SamSung Electronics Co., Ltd.
    Inventor: Chan-Sik Park
  • Patent number: 6144792
    Abstract: A device for fixing the optical elements of an optical fiber amplifier in a packaging box comprises a central opening provided in the packaging box for making a connection with an electronic circuit, an optical fiber holder for holding the erbium doped optical fiber around the central opening, a plurality of guide supports provided in the upper and lower sides of the optical fiber holder for holding the optical isolators, wavelength division multiplexers and optical taps, and protectors provided in the left and right sides of the optical fiber holder for holding the thermocontractile tubes.
    Type: Grant
    Filed: October 27, 1997
    Date of Patent: November 7, 2000
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Tae-Ryong Kim, Mi-Young Hong, Chan-Sik Park
  • Patent number: 6074930
    Abstract: A method for forming trench isolation in the silicon substrate is disclosed. This method allows for an improved bonding force between the sidewall silicon dioxide layer and the sidewall of the trench. After a trench is formed, sidewall silicon dioxide is grown on the sidewall of the trench by a first oxidation process. Then, PE-TEOS is deposited on the silicon substrate and the sidewall of the trench. The PE-TEOS layer around the entrance of the trench is then etched back using argon gas. The second oxidation process or the first annealing proceeds to enhance the bonding force between the sidewall silicon dioxide layer and the sidewall of the trench. After the second oxidation process or the annealing, the trench is filled with O.sub.3 -TEOS, and then PE-TEOS is deposited over the O.sub.3 -TEOS layer. Finally, the second annealing process follows.
    Type: Grant
    Filed: September 17, 1998
    Date of Patent: June 13, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Hawn Cho, Han Seong Kim, Chan Sik Park, Won Soon Lee