Abstract: An SixNy or SiOxNy liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2 layer underneath the liner. The CoSi2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2 layer.

Abstract: A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Abstract: An SixNy or SiOxNy liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2 layer underneath the liner. The CoSi2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2 layer.

Abstract: A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Abstract: A prosthetic cage for spine adapted to be implanted in an intervertebral disc space between two vertebral bodies in a spine and to accommodate fusion of the disc space, said cage being a tubular body with an internal aperture, an external surface of which having a plurality of wall apertures each perpendicular to the longitudinal axis thereof and communicating with the internal aperture, and dual convex screw threads extended therefrom, such that the cage of the present invention has an advantage that the stability of fixation between the cage and the vertebral body can be achieved by simple variation of its shape.

Abstract: A frame fixator and operation system thereof, the fixator comprising an upper end ring and a lower end ring, and a plurality of length adjustment means coupled at both ends thereof to the upper end ring and the lower end ring, wherein the length adjustment means include an actuator, a moving member movable by the actuator and a digital indicator for indicating a length of the length adjustment means changeable to the movement of the moving member, the fixator and peration system for enabling to automatically adjust a distraction rate and distraction frequency of fracture during bone deformity correction and lengthening and to easily adjust the length by digitally indicating changed value of length according to manual or automatic manipulation.

Abstract: A prosthetic cage for spine adapted to be implanted in an intervertebral disc space between two vertebral bodies in a spine and to accommodate fusion of the disc space, said cage being a tubular body with an internal aperture, an external surface of which having a plurality of wall apertures each perpendicular to the longitudinal axis thereof and communicating with the internal aperture, and dual convex screw threads extended therefrom, such that the cage of the present invention has an advantage that the stability of fixation between the cage and the vertebral body can be achieved by simple variation of its shape

Abstract: A method for predicting the development of type 2 diabetes before the manifestation of its symptoms in a subject, which comprises measuring the mitochondrial DNA(mtDNA) content in peripheral blood of the subject, comparing the measured mtDNA content with that of a normal control, and predicting the increased risk of development of diabetes when the subjects mtDNA content is lower than that of the normal control.

Abstract: The present invention discloses a method of forming a via hole of a semiconductor device, which includes the steps of: forming a plurality of first metal wires on a wafer; after coating a SOG film on the first oxide film, forming a groove in the SOG film using a mask in which a via hole contact is formed, the size of which is bigger than that of the real via hole to be formed in it; performing a process of filling up completely the groove portion (a two-step process for the first embodiment or a one-step process for the second embodiment); and forming a via hole using a contact mask the size of which is the same as that of the real via hole.