Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d??Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Abstract: A film-shaped coating layer including at least one lithium ion conductive compound having a band gap of 5.5 eV to 10 eV formed on the surface of a core including a lithium composite metal oxide to a thickness at which dielectric breakdown does not occur according to types of the lithium ion conductive compound and the lithium composite metal oxide under charge and discharge conditions. Thereby, an oxidation/reduction reaction is suppressed by blocking the movement of electrons at an interface between an active material and an electrolyte solution by the coating layer which surrounds the surface of particles and has lithium ion conductivity, and, as a result, a positive electrode active material for a secondary battery, which may improve energy density of an electrode and life characteristics of a battery, and a secondary battery including the same are provided.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: The present invention relates to a solid electrolyte comprising a sulfide-based compound and an all-solid-state battery applied therewith and, more particularly, to a solid electrolyte comprising a sulfide-based compound that is free of phosphorus (P) element but exhibits high ionic conductivity, and an all-solid-state battery applied therewith. The sulfide-based solid electrolyte and the all-solid-state battery applied therewith according to the present invention exhibit improved reactivity to moisture to prevent the generation of toxic gas, resulting in an improvement in safety and stability and do not reduce in ion conductivity even after being left in air, and the solid electrolyte is easy to handle and store thanks to the improved shelf stability thereof.

Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than ?0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A?B+?1??2??Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, ?1 is a constant of ?5.422, and ?2 is a constant of ?9.097.

Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.

Abstract: The present invention relates to a method for preparing a perovskite compound usable as a light absorber of a solar cell, and provides a method for preparing a light absorber of a solar cell in which the crystallinity of a perovskite compound is increased, resulting in an increase in the stability and efficiency of the solar cell.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld ??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: A film-shaped coating layer including at least one lithium ion conductive compound having a band gap of 5.5 eV to 10 eV formed on the surface of a core including a lithium composite metal oxide to a thickness at which dielectric breakdown does not occur according to types of the lithium ion conductive compound and the lithium composite metal oxide under charge and discharge conditions. Thereby, an oxidation/reduction reaction is suppressed by blocking the movement of electrons at an interface between an active material and an electrolyte solution by the coating layer which surrounds the surface of particles and has lithium ion conductivity, and, as a result, a positive electrode active material for a secondary battery, which may improve energy density of an electrode and life characteristics of a battery, and a secondary battery including the same are provided.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: The present invention relates to a composition for forming a conductive pattern, which is able to form a fine conductive pattern onto a variety of polymer resin products or resin layers by a very simple process, a method for forming the conductive pattern using the same, and a resin structure having the conductive pattern.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d??Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Abstract: The present invention relates to a solid electrolyte comprising a sulfide-based compound and an all-solid-state battery applied therewith and, more particularly, to a solid electrolyte comprising a sulfide-based compound that is free of phosphorus (P) element but exhibits high ionic conductivity, and an all-solid-state battery applied therewith. The sulfide-based solid electrolyte and the all-solid-state battery applied therewith according to the present invention exhibit improved reactivity to moisture to prevent the generation of toxic gas, resulting in an improvement in safety and stability and do not reduce in ion conductivity even after being left in air, and the solid electrolyte is easy to handle and store thanks to the improved shelf stability thereof.

Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.

Abstract: The present invention relates to a method for preparing a perovskite compound usable as a light absorber of a solar cell, and provides a method for preparing a light absorber of a solar cell in which the crystallinity of a perovskite compound is increased, resulting in an increase in the stability and efficiency of the solar cell.

Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than ?0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A?B+?1??2??Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, ?1 is a constant of ?5.422, and ?2 is a constant of ?9.097.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: The present invention relates to a composition for forming a conductive pattern, which is able to form a fine conductive pattern onto a variety of polymer resin products or resin layers by a very simple process, a method for forming the conductive pattern using the same, and a resin structure having the conductive pattern.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.