Abstract: A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, wherein the silicon-containing polymer has a total sum of Si—H integral values in a 1H-NMR spectrum of less than or equal to about 12. The sum of the Si—H integral values is calculated under conditions described in the specification.

Abstract: Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Abstract: A mobile terminal device is disclosed. The mobile terminal device includes a metal rear cover; a metal frame forming an accommodation space with the metal rear cover; a printed circuit board assembly; and an antenna module inside the accommodation space and electrically connected with the printed circuit board assembly. The antenna module includes a grounding terminal and a feeding point disposed on the printed circuit board assembly. The metal rear cover includes a first metal part, a second metal part, a third metal part and the two coupled gap. The first metal part and the third metal part are connected to both ends of the second metal part.

Abstract: A mobile terminal device is provided in the present disclosure. The mobile terminal device includes a metal back cover with a groove, a printed circuit board with a groove opening corresponding to the groove, and an antenna module. The antenna module includes a radiator body and a groove adaptor member, at least part of the metal back cover serves as the radiator body of the antenna module. The groove adaptor member includes a groove adapting part and a supporting part for supporting the groove adapting part, the groove adapting part includes a main body, a first extending piece and a second extending piece. The main body is received in the groove opening and aligned with the groove; the first extending piece and the second extending piece respectively extend from two opposite edges of the main body and are connected to the printed circuit board.

Abstract: A self-configurable resonance antenna includes a main antenna for transmitting and receiving radio waves of a plurality of mutually different frequency bands, a coupling element having at least two radiating patches with different effective electrical lengths for configuring the impedance of the self-configurable resonance antenna, and a matching circuit disposed between the main antenna and the coupling element. The matching circuit has a filter, a RF detector, a switching logic and a RF switch, the RF switch switching between at least the two radiating patches with different effective electrical lengths for adjusting the main antenna operating in different frequency bands.

Abstract: A washing machine which performs a washing operation by heating water, a detergent, or a wash liquid using a dielectric heating method and a method of controlling the washing machine. The washing machine may include a water supply portion which supplies a wash liquid including water and a detergent, a power supply portion which supplies alternating current (AC) power, and an electric field forming portion which forms an electric field between a first electrode portion and a second electrode portion according to the AC power to heat the supplied wash liquid.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, wherein the silicon-containing polymer has a total sum of Si—H integral values in a 1H-NMR spectrum of less than or equal to about 12. The sum of the Si—H integral values is calculated under conditions described in the specification.

Abstract: A dryer includes a main body, a drying chamber provided inside the main body and configured to accommodate objects to be dried, a conveying unit configured to convey the objects to be dried, a sensor unit configured to sense information on states of the objects to be dried, and a control unit configured to control the conveying unit to move the objects to be dried based on the information sensed by the sensor unit.

Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Abstract: A rinse solution for a silica thin film includes trimethylbenzene, diethylbenzene, indane, indene, tert-butyl toluene, methylnaphthalene, a mixture including an aromatic hydrocarbon having 12 or more carbon atoms, a mixture including an aliphatic hydrocarbon having 12 or more carbon atoms, a mixture including a hetero hydrocarbon compound including a phenyl group and an oxygen atom, or a combination thereof.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

Abstract: A helmet apparatus for automated vehicle heading alert includes a carrier detachable from headwear of a driver, a plurality of light emitting elements, a gyroscopic device, a signal processing and decision-making (SPDM) processor, and a power device. The light emitting elements are installed on the carrier and include left and right light emitting elements. The gyroscopic device is installed on the carrier and includes a gyroscope for detecting an operation of a vehicle and outputting gyroscope signals corresponding to the operation. The SPDM processor receives the gyroscope signals to form operation signals, processes the operation signals, performs a discriminant decision-making procedure, generates consecutively discriminant signals corresponding to the operation signals, and drives accordingly at least one of the light emitting elements to turn on, turn off, or flashing.

Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Abstract: A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,

Abstract: Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Abstract: A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:

Abstract: A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.