Abstract: A vortex generator including an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes an annular blade assembly mounted on the annular bearing. The annular blade assembly includes a leading face with an upstream opening having a first radius. The annular blade assembly further includes a trailing face with a downstream opening having a second radius, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and the second radius is different from the first radius. The annular blade assembly further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and each opening of the plurality of openings extends beyond the annular bearing in a direction parallel to the longitudinal axis.

Abstract: A method includes mixing a first deionized water (DI) water from a first pipe and a second DI water from a second pipe in a merging pipe that is in fluid communication with the first pipe and the second pipe. An electrical resistivity of the first DI water is different from an electrical resistivity of the second DI water. A mixture of the first DI water and the second DI water is applied from the merging pipe onto a wafer.

Abstract: The present invention is related to an UV LED curing apparatus, and more particularly, to an UV LED curing apparatus with improved housing and switch controller. The light reflective inner casing is preferably provided as an effective UV light reflector and as a supporting substrate of the UV LED light source while being capable of transmitting heat from the UV LED light source away for further heat dissipation to the ambient by the outer casing. The outer casing is detachably attached to the inner casing and allows a greater user interaction for decorative and entertainment purposes while also being a protective and heat dissipation means.

Abstract: A method for cleaning a reticle includes rotating the reticle, providing a cleaning liquid to clean the reticle, detecting a static charge value on the reticle during rotating the reticle, and reducing static charges on the reticle in response to the detected static charge value. Hence, the electrostatic discharge (ESD) occurred to the reticle can be prevented.

Abstract: A chemical mechanical polishing method includes holding a wafer in a carrier over a polishing pad, dispensing a first slurry comprising a plurality of first abrasive particles into the carrier, rotating at least one of the carrier and the polishing pad, halting the dispensing of the first slurry, and dispensing a second slurry into the carrier after halting the dispensing of the first slurry, wherein the second slurry comprises a plurality of second abrasive particles smaller than the first abrasive particles.

Abstract: Nail gel curing devices emitting ultraviolet light, as well as methods of their making and use are disclosed. The devices are useful for curing, inter alia, acrylic compositions, more particularly, acrylic nail gel compositions, and typically employ ultraviolet and/or visible light emitting diodes (“LED”) to cure such ultraviolet and/or visible light curable nail gel resins.

Abstract: A touch device including a touch screen, a first input device and a processor is provided. At a first start time, when the first input device touches on the touch screen with a first touch area at a first position, the touch screen generates a first event, and the first input device transmits a first signal to the touch screen. The processor is coupled to the touch screen. When the touch screen receives the first signal during a pre-determined period from the first start time and the first touch area is larger than a first area threshold, the processor determines that the first event belongs to the first input device and that the first position is a start position of the first input device.

Abstract: An apparatus for dispensing fluid includes a fluid source; a nozzle having an inner layer and an outer layer, the inner layer defining a bore in fluid communication with the fluid source; and a plurality of pins each moveable to be in physical contact with the outer layer, wherein the plurality of pins is operable to apply a force towards the outer layer to adjust a cross-section of the bore.

Abstract: A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

Abstract: A temperature controlling apparatus includes a platen, a fluid source, a chiller, a first conduit and a second conduit. The fluid source supplies a fluid. The chiller is coupled to the fluid source to cool the fluid in the fluid source to a cooling temperature. The first conduit includes a first inlet in communication with the fluid source, a first outlet and a first heater that heats the fluid from the cooling temperature to a first heating temperature. The fluid heated by the first heater is dispensed on the platen through the first outlet. The second conduit includes a second inlet in communication with the fluid source, a second outlet and a second heater that heats the fluid from the cooling temperature to a second heating temperature different from the first heating temperature. The fluid heated by the second heater is dispensed on the platen through the second outlet.

Abstract: A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.

Abstract: A semiconductor device includes a substrate, a stress tuning layer disposed on the substrate, an aluminum nitride (AlN) buffer layer disposed on the stress tuning layer, an n-type semiconductor layer disposed on the AlN buffer layer, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer disposed on the active layer. The stress tuning layer has a lattice constant larger than that of the AlN buffer layer and no larger than that of the n-type semiconductor layer. A method of manufacturing the semiconductor device is also provided.

Abstract: A triple well isolated diode including a substrate having a first conductivity type and a buried layer in the substrate. The buried layer has a second conductivity type opposite to the first conductivity type. The triple well isolated diode includes an epi-layer over the substrate and the buried layer. A portion of the epi-layer having the first conductivity type contacts the buried layer. The triple well isolated diode includes a first well, a second well, a third well and a deep well in the epi-layer. The first well and the third well have the second conductivity type. The second well and the deep well have the first conductivity type. The second well surrounds sides of the first well. The third well surrounds sides of the second well. The deep well extends beneath the first well to electrically connect to the second well on opposite sides of the first well.

Abstract: An antenna module is disclosed. The antenna module includes a circuit board and at least one antenna set. Wherein, the antenna set includes a driving antenna and a plurality of parasitic antennas. The driving antenna is formed on the circuit board, and the parasitic antennas are positioned with the driving antenna as a center on the circuit board. Whereby, the space occupied by the antenna module can be small, and beams of wireless signals radiated by the antenna module can be controlled.

Abstract: A vortex generator for an exhaust system includes an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes a flow splitter mounted on the annular bearing. The flow splitter includes a leading face with an upstream opening. The flow splitter further includes a trailing face with a downstream opening, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line. The flow splitter further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and wherein a trailing side of each blade faces the longitudinal axis.

Abstract: A system for providing deionized (DI) water with a dynamic electrical resistivity is provided. The system includes plural DI water sources, source pipes, flow control devices, a merging pipe and a flow controller. The DI water sources respectively have different electrical resistivities. The source pipes are respectively connected to the DI water sources in a one-to-one manner. The flow control devices are respectively disposed in the source pipes in a one-to-one manner. The merging pipe joins the source pipes. The flow controller includes a resistivity sensor disposed in the merging pipe, and the flow controller is configured to control a flowrate of the DI water through the source pipes.

Abstract: A nail polish curing device with a light absorbing chamber is provided, including: a lower case, an upper case, a control module and a bottom plate. The lower case includes an enclosed wall and an opening on a side of the wall. A chamber is formed by the opening and the wall. The upper case is detachably mounted on the lower case. An upper opening and a recess that serves as a hidden handle are provided on the upper case. The control module is disposed on the upper case and is configured to activate UV light emitting diode module. Herein, a light absorbing layer is provided on the bottom plate and on each surface of the lower case in the chamber. The light absorbing layers are configured to completely absorb UV light emitted by the UV light emitting diode.

Abstract: A spectrometer (100) and an optical input portion (32) thereof are disclosed. The optical input portion (32) comprises an assembly structure (322), and the assembly structure (322) is formed at a hole wall (321) of a through hole (3211) of the optical input portion (32). A light (L1) is incident into a dispersing element (2) of the spectrometer (100) along an optical path (13) after passing through the through hole (3211), and is dispersed by the dispersing element (2). The assembly structure (322) is used to be detachably assembled with an optical element (200). When the optical element (200) is assembled with the assembly structure (322), an optical axis of the optical element (200) is linked to the optical path (13). As a result, the light (L1) passing through the optical element (200) is incident to the dispersing element (2) along the optical axis and the optical path (13).

Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.

Abstract: A nitride based semiconductor device including a buffer layer, a three-dimensional stress tuning layer formed on the buffer layer, a first-type semiconductor layer formed on the three-dimensional stress tuning layer, an active layer formed on the first-type semiconductor layer, and a second-type semiconductor layer formed on the active layer. The three-dimensional stress tuning layer and the buffer layer cooperatively define an interface therebetween. The interface has a three-dimensional composition distribution.