Abstract: A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlayer insulating layer to electrically connect the respective photodiodes with each other, an oxide layer, a passivation layer to protect the CMOS image sensor from external sources, and microlenses formed to pass through the passivation layer at portions corresponding to the photodiodes.

Abstract: A CMOS image sensor and method the same are disclosed. The method comprises forming an insulating interlayer including a plurality of photodiodes on a semiconductor substrate, forming a plurality of metal lines within the insulating interlayer, sequentially forming an oxide layer and a passivation layer on the insulating interlayer, forming a TEOS layer on the passivation layer, forming a planarization layer on a portion of the TEOS layer, and forming a microlens on the planarization layer.

Abstract: A semiconductor device having a test pattern for measuring epitaxial pattern shift is provided. The test pattern includes a semiconductor substrate having a first pattern formed therein; a first impurity region formed in the semiconductor substrate; an epitaxial layer formed on the semiconductor substrate, the epitaxial layer having a second pattern formed therein, wherein the second pattern corresponds to the first pattern; and a second impurity region formed in the epitaxial layer, the second impurity region in electrical contact with the first impurity region.

Abstract: Provided are a fault model and rule based fault management apparatus and method for a home network. The fault management apparatus includes: a plurality of fault generation unit formed in a multilevel structure and generating fault notification when a fault is generated; a plurality of fault communication unit for transferring fault notification from one of the fault generation unit; a fault agent unit for transferring each fault notification from a plurality of the fault communication unit; and a fault diagnosis and process unit for receiving the fault notification from the fault agent unit, diagnosing a corresponding fault, and processing the corresponding fault using a fault model, a fault decision rule, and a fault process rule.

Abstract: Provided are an apparatus and a method for searching/managing a home network service based on a home network condition. The apparatus, includes: a service storing unit for storing a home network service; a device information analyzing unit for analyzing home network device information and checking a type of the home network device information; a service searching unit for searching a related home network service list according to the type of the home network device information in the home network service list; and a service operation managing unit for installing the home network service upon installation request of the user in the list of the searched home network service, and managing an operation of the home network service upon operation request of the user in the list of the installed home network service.

Abstract: Provided is a home-network UMB system and a method thereof for providing interoperability between devices connected one another through different types of middlewares in a home network. The home-network UMB system includes: a bridge core for establishing/releasing a connection between bridge adaptors of different types of middlewares and analyzing/transferring a universal middleware message in order to interoperate devices connected through different types of middlewares existed on a home network; and a plurality of bridge adaptor for connecting the bridge core to a corresponding middleware, and finding/releasing different types of devices, controlling/monitoring different types of devices and registering/creating an event for different types of devices through transforming a universal middleware bridge message to a local message of each middleware and vice versa.

Abstract: An image sensor includes a semiconductor substrate; a pixel array disposed on the semiconductor substrate; and an insulating interlayer, formed on the semiconductor substrate, having a trench coinciding with the disposition of the pixel array, the trench having uniformly inclined inner sidewalls.

Abstract: Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, ions of low concentration may be implanted into a photodiode region of a semiconductor substrate to form a photodiode. At least one gate insulating layer pattern may be formed on the semiconductor substrate, and a gate electrode may be formed on each of the at least one gate insulating layer pattern to receive charges from the photodiode. Spacers may be formed at sidewalls of the gate electrode, respectively. A selective epitaxial growth layer may be formed on the photodiode, and ions of low concentration may be obliquely implanted into one side and the other side of the gate electrode to form a low concentration source and a low concentration drain extending below the spacer. Subsequently, a high concentration source and a high concentration drain may be formed on both sides of the gate electrode, respectively.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The method includes: preparing a semiconductor substrate in which a device isolation region and an active region are defined; forming a gate pattern including a gate oxide layer and a gate electrode on the semiconductor substrate; implanting n-type impurity ions in a predetermined part of the active region of the semiconductor substrate to form a photodiode region; forming a spacer at a sidewall of the gate pattern; forming a p-type impurity region at a surface of the photodiode region; forming an epitaxial layer on the semiconductor substrate and the gate pattern except for on the device isolation region and the spacers by performing a selective epitaxial growth; and implanting n+ type ions in a transistor region of the semiconductor substrate below the epitaxial layer to form a source/drain region.

Abstract: A method for fabricating a transistor of semiconductor is disclosed.