Abstract: This invention relates to a process and structure for performing a high temperature or other process on both sides of a thin slice of material or die prior to being placed onto a integrated circuit or multi-chip module. In a particular embodiment, a process and structure is given to provide for double sided interdiffusion for passivation of a Mercury Cadmium Telluride (MCT) film which is mounted to a read-out integrated circuit (ROIC) face side up in order to fabricate vertically integrated Focal Plane Arrays (FPAs) with reduced dark currents and improved performance. The process of the present invention also allows for the insertion of novel materials such as Double Layer Heterojunction (DLHJ), MBE, MOCVD, etc. in the vertical integrated approach to FPAs.

Abstract: A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.

Abstract: Channel stops for MIS infrared photodetector devices in Hg.sub.1-x Cd.sub.x Te by lattice damage (454) between and automatically aligned to MIS gates (408). Also, field plates and guard rings are automatically aligned to MIS gates.

Abstract: Materials for infrared transparent, electrically conductive applications such as gate for infrared detectors made of titanium oxynitride (TiN.sub.x O.sub.y), bismuth, and antimony. Titanium oxynitride with resistivity of at least 0.001 .OMEGA.-cm provides sufficient transmittance for infrared detector gate application as illustrated in FIG. 4.

Abstract: A novel process for fabricating a CCD imager arrray (10) having a tin oxide electrode monolayer (18) is disclosed. The process includes a low pressure chemical vapor deposition step using tetramethyltin and oxygen, and an ion implantation step that increased conductivity of the tin oxide electrodes to as high as 700 ohm.sup.-1 cm.sup.-1.

Abstract: For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.

Abstract: For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.