Patents by Inventor Chang-geun Ahn
Chang-geun Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8133722Abstract: Provided are a cell culture compartment unit and an array including the same. The cell culture compartment unit includes: a cell culture region and a bio material emission region including a cell culture fluid, which are separated with a porous membrane therebetween; a piezoelectric device on the porous membrane of the cell culture region; a thin layer for cell attachment being on the piezoelectric device and having at least one surface on which cells are attachable; and a first power supply applying a first electric field to the piezoelectric device.Type: GrantFiled: December 10, 2009Date of Patent: March 13, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Sanghee Kim, Chul Am Kim, Chang-Geun Ahn, Moon Youn Jung
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Patent number: 8119430Abstract: Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.Type: GrantFiled: June 30, 2009Date of Patent: February 21, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Chil-Seong Ah, An-Soon Kim, Tae-Youb Kim, Gun-Yong Sung, Seon-Hee Park
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Publication number: 20120015467Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.Type: ApplicationFiled: September 22, 2011Publication date: January 19, 2012Applicant: Electronics and Telecommunications Research InstituteInventors: Tae Youb KIM, Chil Seong AH, Chang Geun AHN, Han Young YU, Jong Heon YANG, Moon Gyu JANG
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Patent number: 8058673Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.Type: GrantFiled: September 29, 2008Date of Patent: November 15, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Tae Youb Kim, Chil Seong Ah, Chang Geun Ahn, Han Young Yu, Jong Heon Yang, Moon Gyu Jang
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Publication number: 20110194976Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: ApplicationFiled: June 13, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
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Publication number: 20110193052Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: ApplicationFiled: May 19, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstitInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
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Publication number: 20110180856Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.Type: ApplicationFiled: May 27, 2009Publication date: July 28, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
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Publication number: 20110165557Abstract: Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.Type: ApplicationFiled: November 20, 2008Publication date: July 7, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chil-Seong Ah, Ansoon Kim, Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Taeyoub Kim, HyeKyoung Yang, Gun-Yong Sung, Seon-Hee Park, Han-Young Yu, Moon-Gyu Jang
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Publication number: 20110151139Abstract: A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.Type: ApplicationFiled: November 11, 2010Publication date: June 23, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: An Soon KIM, Wan Joong Kim, Chil Seong Ah, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chang Geun Ahn, Gun Yong Sung
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Publication number: 20110139637Abstract: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.Type: ApplicationFiled: December 16, 2008Publication date: June 16, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chil Seong Ah, Ansoon Kim, Chan Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In Bok Baek, Taeyoub Kim, Gun Yong Sung, Seon-Hee Park, Han Young Yu
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Patent number: 7947585Abstract: Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode.Type: GrantFiled: December 4, 2006Date of Patent: May 24, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: In Bok Baek, Seong Jae Lee, Jong Heon Yang, Chang Geun Ahn, Han Young Yu, Ki Ju Im
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Publication number: 20110068015Abstract: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device.Type: ApplicationFiled: February 11, 2010Publication date: March 24, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chan Woo Park, Chang Geun Ahn, Chil Seong Ah, Tae Youb Kim, An Soon Kim, Jong Heon Yang, Gun Yong Sung
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Publication number: 20110053290Abstract: Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.Type: ApplicationFiled: August 17, 2010Publication date: March 3, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chil Seong Ah, An Soon Kim, Bong Kyu Kim, Gun Yong Sung, Seon Hee Park
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Publication number: 20110043758Abstract: There is provided an apparatus for irradiating a beam at a user's eye gaze point and an operation method thereof. The apparatus includes an eye gaze point detecting part analyzing a movement of a user's pupils and detecting the user's eye gaze point, and a beam irradiation part irradiating a beam at the user's eye gaze point detected by the eye gaze point detecting part. The apparatus detects the user's current eye gaze point and irradiates the beam at the user's detected eye gaze point, thereby allowing for the performance of desired control with greater accuracy.Type: ApplicationFiled: April 19, 2010Publication date: February 24, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun AHN, Rae Man Park, Gun Yong Sung, Seon Hee Park
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Patent number: 7893466Abstract: Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.Type: GrantFiled: August 20, 2008Date of Patent: February 22, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Jong Heon Yang, In Bok Baek, Chang Geun Ahn, Chan Woo Park, An Soon Kim, Han Young Yu, Chil Seong Ah, Tae Youb Kim, Myung Sim Jun, Moon Gyu Jang
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Publication number: 20110017613Abstract: Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding.Type: ApplicationFiled: December 6, 2007Publication date: January 27, 2011Applicant: ELECTRONICS AND TELECOMMUNICAITONS RESEARCH INSTITUTEInventors: Han-Young Yu, Ansoon Kim, Jong-Heon Yang, In-Bok Baek, Chang-Geun Ahn, Chil-Seong Ah, Chan-Woo Park, Seongjae Lee, Taehyoung Zyung
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Publication number: 20100283031Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.Type: ApplicationFiled: September 29, 2008Publication date: November 11, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Tae Youb KIM, Chil Seong Ah, Chang Geun Ahn, Han Young Yu, Jong Heon Yang, Moon Gyu Jang
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Publication number: 20100270530Abstract: A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device.Type: ApplicationFiled: July 24, 2008Publication date: October 28, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Book Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
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Patent number: 7750378Abstract: Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.Type: GrantFiled: April 10, 2006Date of Patent: July 6, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Won-ju Cho, Chang-geun Ahn, Ki-ju Im, Jong-heon Yang, In-bok Baek, Seong-jae Lee
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Publication number: 20100159580Abstract: Provided are a cell culture compartment unit and an array including the same. The cell culture compartment unit includes: a cell culture region and a bio material emission region including a cell culture fluid, which are separated with a porous membrane therebetween; a piezoelectric device on the porous membrane of the cell culture region; a thin layer for cell attachment being on the piezoelectric device and having at least one surface on which cells are attachable; and a first power supply applying a first electric field to the piezoelectric device.Type: ApplicationFiled: December 10, 2009Publication date: June 24, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Sanghee KIM, Chul Am KIM, Chang-Geun AHN, Moon Youn JUNG