Abstract: A stress modulating device including a semiconductor substrate, a first insulating layer formed over a first side of the semiconductor substrate, a second insulating layer formed over the first insulating layer, a third insulating layer formed over a second side of the semiconductor substrate, a fourth insulating layer formed over the third insulating layer, and a fifth insulating layer formed over the fourth insulating layer for incorporation in multi-stack package assemblies for reducing stress, strain, and/or warpage on the active elements within the package assembly.

Abstract: The present application provides a display module and a display device, the display module includes a bending zone and a non-bending zone which are adjacently arranged; the display module includes a flexible screen and a support component which are laminated, and the support component is located on a backlight side of the flexible screen; the support component is provided with a first groove, and the first groove is located on a side of the bending zone close to the non-bending zone. The first groove may reduce the rigidity of the support component on the side of the bending zone close to the non-bending zone and alleviate the crease in the support component, preventing the crease of this part of the support component from being too sharp and thus alleviating the crease of the display module.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a first semiconductor material disposed over a substrate and a dielectric layer disposed on the first semiconductor material. The dielectric layer includes a dopant. The structure further includes a second semiconductor material disposed on the dielectric layer, a first semiconductor layer in contact with the second semiconductor material, and a first dielectric spacer in contact with the first semiconductor layer, wherein the first dielectric spacer includes the dopant.

Abstract: An industrial heavy load electric linear actuator includes a gearbox, an electric motor, a lead screw, an extension pipe and a load baring structure. The electric motor is connected to the gearbox. A portion of the lead screw is received inside the gearbox and driven by the electric motor, and another portion of the lead screw is extended out of the gearbox. The extension pipe is movably fastened to the lead screw. The load bearing structure includes a sleeve, a bearing, a fastening element, a fixation seat, and a rear supporting seat. The sleeve is mounted to the lead screw and holds the bearing jointly with the fastening element. The fixation seat and the rear supporting seat hold the bearing at outer perimeters of the sleeve and the fastening element.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: An electronic device and a manufacturing method thereof are disclosed. The manufacturing method of the electronic device includes following steps: providing a substrate; forming a first compressible layer on the substrate; forming a first bonding pad on the first compressible layer; providing an electronic component; forming a second bonding pad on the electronic component; and bonding the electronic component with the substrate by contacting the second bonding pad with the first bonding pad.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a plurality of semiconductor elements; performing a packaging process on the plurality of semiconductor elements to form a plurality of packaged semiconductor elements, wherein the packaging process includes disposing a plurality of filling material layers respectively on a sidewall of each of the plurality of semiconductor elements; providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes at least one first recess; and disposing the plurality of packaged semiconductor elements in the at least one first recess of each of the plurality of working areas through fluid transfer.

Abstract: Methods of fabricating optical devices with high refractive index materials are disclosed. The method includes forming a first oxide layer on a substrate and forming a patterned template layer with first and second trenches on the first oxide layer. A material of the patterned template layer has a first refractive index. The method further includes forming a first portion of a waveguide and a first portion of an optical coupler within the first and second trenches, respectively, forming a second portion of the waveguide and a second portion of the optical coupler on a top surface of the patterned template layer, and depositing a cladding layer on the second portions of the waveguide and optical coupler. The waveguide and the optical coupler include materials with a second refractive index that is greater than the first refractive index.

Abstract: A semiconductor package includes a substrate, a semiconductor device, and a ring structure. The semiconductor device disposed on the substrate. The ring structure disposed on the substrate and surrounds the semiconductor device. The ring structure includes a first portion and a second portion. The first portion bonded to the substrate. The second portion connects to the first portion. A cavity is between the second portion and the substrate.

Abstract: The present disclosure provides a photo sensing device and a method for forming a photo sensing device. The photo sensing device includes a substrate, a photosensitive member, a superlattice layer and a diffusion barrier structure. The substrate includes a silicon layer at a front surface. The photosensitive member extends into and at least partially surrounded by the silicon layer, wherein an upper portion of the photosensitive member protruding from the silicon layer has a top surface and a facet tapering toward the top surface. The superlattice layer is disposed between the photosensitive member and the silicon layer. The diffusion barrier structure is disposed at a first side of the photosensitive member and a bottom of the diffusion barrier structure is at a level below a top surface of the silicon layer, wherein at least a portion of the diffusion barrier structure is laterally surrounded by the silicon layer.

Abstract: A method includes forming first nanostructures over a substrate, then forming second nanostructures over the plurality of first nanostructures. A first source/drain region is epitaxially grown adjacent the first nanostructures, and a second source/drain region is epitaxially grown over the first source/drain region and adjacent the second nanostructures. An implantation process is performed to implant impurities into the second source/drain region, wherein the implantation process forms an amorphous region within the second source/drain region. At least one rapid thermal process is performed on the second source/drain region, wherein performing each rapid thermal process recrystallizes a portion of the amorphous region.

Abstract: A transmission device (1) includes a gearbox (10), a motor set (20) and a braking set (30). The gearbox (10) includes a housing (11) and a transmission set (12) arranged in the housing (11), and the housing (11) includes a socket (111). The motor set (20) includes a motor body (21) and a rotating shaft (22) disposed protrusively from the front side of the motor body (21). The rotating shaft (22) is inserted in the socket (111) and connected to the transmission set (12). The braking set (30) is installed on the rotating shaft (22) and positioned in the socket (111), and the braking set (30) applies braking force on the rotating shaft (22). Therefore, the effect of saving space at the end of the motor is achieved.

Abstract: Provided is a method for preventing or treating an inflammatory pulmonary disease or disorder in a subject in need thereof, including administering to the subject an effective amount of FJU-C28 or a salt thereof. Also provided is a use of an a compound of FJU-C28 or a salt thereof in the manufacture of a medicament for preventing or treating an inflammatory pulmonary disease or disorder.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a fixed portion, a movable portion and a driving assembly. The fixed portion has a main axis and includes a case and a bottom. The case is made of a non-metal material. The bottom is connected to the case. The case and the bottom are arranged along the main axis. The movable portion moves relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion.

Abstract: A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.

Abstract: A semiconductor structure including a substrate, a capacitor, and an oxide semiconductor field effect transistor (OSFET). The capacitor is located on the substrate. The oxide semiconductor field effect transistor is located on the substrate. The oxide semiconductor field effect transistor is electrically connected to the capacitor.

Abstract: A linear actuator with a cushion mechanism includes: an actuator body (10) having a motor (13), a lead screw (151), an outer pipe (152) and a retractable pipe (153), the lead screw (151) is driven by the motor (13), the retractable pipe (153) has a screw nut (157); a rapid release mechanism (30) disposed on the lead screw (151) and releasing a driving relation of the motor (13) and the lead screw (151); and a cushion mechanism (50) disposed in the actuator body (10) and having an elastic member (51) and a deceleration structure (53). When the rapid release mechanism (30) is released, the lead screw (151) rotates while the retractable pipe (153) being loaded, the screw nut (157) compresses the elastic member (51) to make the deceleration structure (53) generate a break, thus a rotation speed of the lead screw (151) is lowered.

Abstract: An electronic system including an image sensor, a face detection engine, an eye detection engine and an eye protection engine is provided. The image sensor captures an image. The face detection engine recognizes a user face in the image. The eye detection engine recognizes user eyes in the image. The eye protection engine turns off a display device when the user eyes are recognized in the image but the user face is not recognized in the image.