Abstract: Disclosed herein is a composition suitable for use in the production of a fuel cell bipolar plate having improved electrical conductivity and mechanical strength. The composition for a fuel cell bipolar plate can include about 100 parts by weight of a basic resin composition including about 10 to about 50 parts by weight of polyphenylene sulfide as a thermoplastic resin and about 50 to 90 parts by weight of a conductive filler and about 0.01 to about 30 parts by weight of a disulfide compound. The composition can improve impregnation of the conductive filler into the thermoplastic resin.

Abstract: Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.

Abstract: Disclosed is an electromagnetic wave interference (EMI)/radio frequency interference (RFI) shielding resin composite material including (A) a thermoplastic polymer resin, (B) a tetrapod whisker, and (C) a low melting point metal.

Abstract: Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.

Abstract: Disclosed herein are a hydrophilic inorganic aggregate, a method for preparing the same, and a hydrophilic composite and a fuel cell bipolar plate, each comprising the same. The hydrophilic inorganic aggregate comprises hybrid particles in which carbon black particles are embedded on the surface of hydrophilic inorganic particles.

Abstract: Disclosed herein are a hydrophilic carbon black aggregate, a method for preparing the same, and a hydrophilic composite and a fuel cell bipolar plate, each comprising the same. The hydrophilic carbon black aggregate comprises hybrid particles having a structure in which hydrophilic inorganic particles are embedded on the surface of carbon black particles.

Abstract: Disclosed is a flame retardant thermoplastic resin composition that includes about 100 parts by weight of a mixed resin (A) including about 10 to about 90 wt % of an aromatic polyamide resin (A-1) and about 10 to about 90 wt % of a polyphenylene sulfide resin (A-2), about 0.5 to about 30 parts by weight of a phosphinic acid metal salt flame retardant (B), and about 10 to about 100 parts by weight of a filler (C).

Abstract: A thermal-conductive resin composition and a plastic article are provided. The thermal-conductive resin composition comprises about 30 to about 60% by weight of a thermoplastic resin and about 40 to about 70% by weight of a thermal-conductive filler comprising about 10% by weight or more of a thermal-conductive filler with a height-to-length ratio (length/height) of about 7,000 to about 40,000 and about 10% by weight or more of a thermal-conductive filler with a height-to-length ratio of about 10 to about 1,000.

Abstract: A semiconductor memory device and method of manufacturing the same are disclosed. The semiconductor memory device includes a semiconductor substrate having a cell region and a peripheral circuit region, first transistors provided on the semiconductor substrate, a first semiconductor layer provided on the first transistors, and bonded by a bonding technique, and second transistors provided on the first semiconductor layer, wherein the first and second transistors are provided in the peripheral circuit regions of the semiconductor substrate and the first semiconductor layer, respectively, and a metal layer is formed on gates of the first and second transistors respectively provided in the peripheral circuit regions of the semiconductor substrate and the first semiconductor layer. As a result, the transistors in the peripheral circuit region requiring high performance can be formed on an upper layer and a lower layer.

Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.

Abstract: Disclosed herein is a composition suitable for use in the production of a fuel cell bipolar plate having improved electrical conductivity and mechanical strength. The composition for a fuel cell bipolar plate can include about 100 parts by weight of a basic resin composition including about 10 to about 50 parts by weight of polyphenylene sulfide as a thermoplastic resin and about 50 to 90 parts by weight of a conductive filler and about 0.01 to about 30 parts by weight of a disulfide compound. The composition can improve impregnation of the conductive filler into the thermoplastic resin.

Abstract: A polyphenylene sulfide resin composition and a plastic mold produced using the same is disclosed. The composition includes a base resin including about 60 to about 95% by weight of a polyphenylene sulfide resin and about 5 to about 40% by weight of a polyphenylene ether resin, and about 0.01 to about 5.0 parts by weight of a disulfide compound based on 100 parts by weight of the base resin.

Abstract: Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.