Abstract: Semiconductor devices are provided having large vias, such as under bonding pads, to increase the via open area ratio, increase the via etching rate, and avoid inter-metal dielectric cracking and damage to the integrated circuit. The via is defined as a large open area in the inter-metal dielectric layer between an isolated conductive bottom substrate layer and a conductive top layer. Methods of manufacturing semiconductor devices with a large via are also provided.

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract: A method of fabricating semiconductor devices may include forming a mold structure on a lower layer, the mold structure including an etch stop layer doped at a first impurity concentration, a lower mold layer doped at a second impurity concentration, and an undoped upper mold layer. The method may include forming a trench exposing the lower layer in the mold structure using dry etching, extending a width of the trench in the etch stop layer using wet etching, and forming a first conductive pattern in the extended width trench, wherein an etch rate of the etch stop layer with respect to the dry etching may be smaller than an etch rate of the lower mold layer with respect to the dry etching, and an etch rate of the etch stop layer with respect to the wet etching may be proportional to the first impurity concentration.

Abstract: A method of fabricating semiconductor devices may include forming a mold structure on a lower layer, the mold structure including an etch stop layer doped at a first impurity concentration, a lower mold layer doped at a second impurity concentration, and an undoped upper mold layer. The method may include forming a trench exposing the lower layer in the mold structure using dry etching, extending a width of the trench in the etch stop layer using wet etching, and forming a first conductive pattern in the extended width trench, wherein an etch rate of the etch stop layer with respect to the dry etching may be smaller than an etch rate of the lower mold layer with respect to the dry etching, and an etch rate of the etch stop layer with respect to the wet etching may be proportional to the first impurity concentration.

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract: A regenerative electric power storage system installed onboard a DC electric rail car comprises: a filter unit which removes high frequency components from the DC power supplied through the catenary of a pantograph; a storage unit for storing power; a bidirectional DC/DC converter which is electrically connected between the filter unit and the storage unit; a DC/DC filter unit to remove high frequency noise; a voltage detection unit and a control unit which controls the switching of the bidirectional DC/DC converter. Instability is presented in the remaining systems of the electric rail car.

Abstract: A regenerative electric power storage system installed onboard a DC electric rail car comprises: a filter unit which removes high frequency components from the DC power supplied through the catenary of a pantograph; a storage unit for storing power; a bidirectional DC/DC converter which is electrically connected between the filter unit and the storage unit; a DC/DC filter unit to remove high frequency noise; a voltage detection unit and a control unit which controls the switching of the bidirectional DC/DC converter. Instability is presented in the remaining systems of the electric rail car.

Abstract: A heat dissipation device for an electronic component includes a heat sink thermally contacting the electronic component and a label member fixed on the heat sink for providing information. The heat sink includes a base and a plurality of fins extending upwardly from a top surface of the base. Two engaging portions protrude from two spaced fins, towards each other. Two flanges angle outwardly from two opposite lateral sides of the label member and clasp the two engaging portions of the heat sink, respectively.

Abstract: Disclosed are method and apparatus for improving battery performance by transferring waste heat generated from heat generating components to the battery that, when brought to a high temperature, attains better performance according to temperature characteristics of the battery. According to the disclosure, an electronic device capable of effecting improved battery performance comprises a central processing unit generating waste heat when being operative; a battery for supplying power to said electronic device; and thermal conducting means, first end thereof making thermal contact with said central processing unit and second end thereof making thermal contact with said battery, causing heat transfer between said central processing unit and said battery. Said waste heat generated by said central processing unit is transferred to alter the temperature of said battery such that its output voltage is stabilized and capacity enlarged.

Abstract: A computer system with an EMI prevention structure includes a housing for covering a main board. The housing has leading grooves formed on two opposite inside surfaces. The main board includes a ground layer formed on the periphery, attached shielding devices corresponding to the leading grooves, a thickness of the main board and a shielding device being substantially equal to a gap formed by a leading groove. Each shielding device has a pair of substantially parallel metal plates and a metal side plate forming an open rectangular channel, the open side allowing the shielding device to fit over the ground layer of the main board. A spring latch is installed on a plate of each shielding device to allow the shielding device to remain firmly fixed to the main board.

Abstract: Disclosed are method and apparatus for improving battery performance by transferring waste heat generated from heat generating components to the battery that, when brought to a high temperature, attains better performance according to temperature characteristics of the battery. According to the disclosure, an electronic device capable of effecting improved battery performance comprises a central processing unit generating waste heat when being operative; a battery for supplying power to said electronic device; and thermal conducting means, first end thereof making thermal contact with said central processing unit and second end thereof making thermal contact with said battery, causing heat transfer between said central processing unit and said battery. Said waste heat generated by said central processing unit is transferred to alter the temperature of said battery such that its output voltage is stabilized and capacity enlarged.

Abstract: A computer system and the EMI prevention structure thereof, comprising: a housing for covering the computer having a leading groove formed inward thereof, a main board having a ground layer formed in the periphery thereof wherein the width of the main board is substantially equal to the interval of the leading groove and a shielding device comprising a pair of substantially parallel metal plates and a metal side plate to form a cuboid with an opining so that said shielding device can be connected the ground layer, wherein at least one spring piece is installed on the plate.