Patents by Inventor Chang-seung Lee

Chang-seung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130168640
    Abstract: An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal.
    Type: Application
    Filed: August 30, 2012
    Publication date: July 4, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jun YUN, Sang-wook KIM, Seong-jun PARK, David SEO, Yung-hee Yvette LEE, Chang-seung LEE
  • Publication number: 20130171781
    Abstract: A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.
    Type: Application
    Filed: May 23, 2012
    Publication date: July 4, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang Seung Lee, Sang Wook Kim, Seong Jun Park, David Seo, Young Jun Yun, Yung Hee Lee
  • Publication number: 20130161587
    Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
    Type: Application
    Filed: May 18, 2012
    Publication date: June 27, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wenxu Xianyu, Chang-youl Moon, Jeong-yub Lee, Chang-seung Lee
  • Patent number: 8426852
    Abstract: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: April 23, 2013
    Assignees: Samsung Electronics Co., Ltd., SNU R&DB Foundation
    Inventors: Jae-cheol Lee, Chang-seung Lee, Jae-gwan Chung, Eun-ha Lee, Anass Benayad, Sang-wook Kim, Se-jung Oh
  • Publication number: 20130050802
    Abstract: In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths.
    Type: Application
    Filed: August 29, 2012
    Publication date: February 28, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-deok BAE, Jun-sik HWANG, Chang-youl MOON, Yoon-sun CHOI, Jung-mok BAE, Chang-seung LEE, Eok-su KIM
  • Publication number: 20120287507
    Abstract: Wire grid polarizers, methods of fabricating a wire grid polarizer and display panels including a wire grid polarizer are provided, the methods include preparing a mold having a lower surface in which a plurality of parallel fine grooves are formed, and arranging the mold on a transparent substrate. The plurality of parallel fine grooves are filled with a conductive liquid ink. A plurality of parallel conductive nano wires are formed on the transparent substrate by curing the conductive liquid ink. The mold is removed.
    Type: Application
    Filed: January 16, 2012
    Publication date: November 15, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung Lee, Jun-seong Kim, Ki-deok Bae
  • Patent number: 7959265
    Abstract: Provided is a thermal inkjet printhead. The inkjet printhead includes a substrate; an insulating layer formed on the substrate; a heater formed on the insulating layer and an electrode to apply current to the heater; a chamber layer that is stacked on the insulating layer and includes an ink chamber; a nozzle layer that is stacked on the chamber layer and includes a nozzle; and at least a heat transfer layer that is formed inside the insulating layer and dissipates heat generated in by the heater toward the substrate.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: June 14, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-sik Shim, Hyung Choi, Yong-seop Yoon, Chang-seung Lee
  • Publication number: 20110133176
    Abstract: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.
    Type: Application
    Filed: September 1, 2010
    Publication date: June 9, 2011
    Applicants: Samsung Electronics Co., Ltd., SNU R&DB Foundation
    Inventors: Jae-cheol Lee, Chang-seung Lee, Jae-gwan Chung, Eun-ha Lee, Anass Benayad, Sang-wook Kim, Se-jung Oh
  • Publication number: 20110127518
    Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.
    Type: Application
    Filed: July 28, 2010
    Publication date: June 2, 2011
    Inventors: Ji-sim Jung, Chang-seung Lee, Jae-cheol Lee, Sang-yoon Lee, Jang-yeon Kwon, Kwang-hee Lee, Kyoung-seok Son
  • Patent number: 7863111
    Abstract: Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.
    Type: Grant
    Filed: September 10, 2007
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-seong Kim, Euk-che Hwang, Ki-deok Bae, Chang-seung Lee, Hyeon-Jin Shin
  • Patent number: 7828707
    Abstract: An image drum for selectively adsorbing toner in a printing apparatus is provided. A method and a configuration of ring electrodes formed on an outside of a drum body is also provided. That is, a control board is mounted inside the drum body, of which a plurality of terminals is externally exposed in the cylindrical drum body, and a photocurable resin is coated on the circumferential surface. Ring electrodes are then formed on circumferential surface of the drum body, by rotating the drum body and allowing an ultraviolet ray through the mask pattern onto the drum body to harden the liquid photocurable resin after contacting a mask-patterned mold mask to the circumferential surface of the drum body.
    Type: Grant
    Filed: September 13, 2006
    Date of Patent: November 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Seung Lee, Kwang Choon Ro, Kae Dong Back, Kyu Ho Shin, Jong Kwang Kim, Won Kyoung Choi, Ki Deok Bae, Soon Cheol Kweon
  • Patent number: 7784177
    Abstract: An image drum manufacturing method including: providing a hollow cylindrical mold having a plurality of mold grooves circumferentially cut in its inner circumferential surface and a core portion having a smaller diameter than a hollow of the mold and having a slit-shaped combination groove; filling a conductive material into the mold grooves of the mold; inserting a control unit for individually applying a voltage to each terminal in the combination groove of the core portion, so that a conductive pattern corresponding to the conductive material is partially exposed; inserting the core portion into the mold so that the conductive pattern corresponds to the conductive material filled into each mold groove; and forming a drum body to be integrally formed with the control unit and the conductive material by filling a molten plastic into a space between the mold and the core portion.
    Type: Grant
    Filed: June 6, 2006
    Date of Patent: August 31, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kae Dong Back, Ki Deok Bae, Chang Youl Moon, Kyu Ho Shin, Soon Cheol Kweon, Won Kyoung Choi, Chang Seung Lee
  • Patent number: 7759591
    Abstract: A pneumatic micro electro mechanical system switch includes a substrate, a pneumatic actuating unit disposed on the substrate; the pneumatic actuating unit having a plurality of variable air cavities communicating such that when one of the plurality of variable air cavities is compressed, the rest are expanded; a signal line having a plurality of switching lines, each of which passes through a corresponding one of the plurality of variable air cavities and has switching ends disposed in a spaced-apart relation with each other in the corresponding one of the plurality of variable air cavities; a movable switching unit to connect the first and the second switching ends of each of the plurality of switching lines if one of the plurality of variable air cavities is compressed; and a driving unit to drive the pneumatic actuating unit so as to selectively compress the plurality of variable air cavities.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: July 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Che-heung Kim, Hyung Choi, In-sang Song, Sang-hun Lee, Sang-wook Kwon, Dong-kyun Kim, Young-tack Hong, Jong-seok Kim, Chang-seung Lee
  • Publication number: 20100167433
    Abstract: A piezoelectric inkjet printhead including an upper substrate formed of a single crystal silicon substrate or an SOI substrate and having an ink inlet therethrough, and a lower substrate formed of an SOI substrate having a sequentially stacked structure with a first silicon layer, an intervening oxide layer, and a second silicon layer in which a manifold, pressure chambers, and dampers are formed in the second silicon layer by wet or dry etching, and nozzles are formed through the intervening oxide layer and the first silicon layer by dry etching, and a method of manufacturing the same.
    Type: Application
    Filed: March 12, 2010
    Publication date: July 1, 2010
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Jae-chang Lee, Jae-woo Chung, Kyo-yool Lee, Chang-seung Lee, Sung-gyu Kang
  • Patent number: 7728703
    Abstract: An RF MEMS switch and a method for fabricating the same are disclosed, in which the RF MEMS device is down driven at a low voltage using a piezoelectric effect. The RF MEMS switch includes a substrate provided with RF signal lines and a cavity, a cantilever positioned on the cavity, having one end fixed to the substrate, and a contact pad connecting the RF signal lines with the cantilever in contact with the RF signal lines when the cantilever is down driven.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: June 1, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-seok Kim, Sang-wook Kwon, Dong-kyun Kim, Che-heung Kim, Sang-hun Lee, Young-tack Houng, Chang-seung Lee, In-sang Song
  • Patent number: 7695118
    Abstract: A piezoelectric inkjet printhead including an upper substrate formed of a single crystal silicon substrate or an SOI substrate and having an ink inlet therethrough, and a lower substrate formed of an SOI substrate having a sequentially stacked structure with a first silicon layer, an intervening oxide layer, and a second silicon layer in which a manifold, pressure chambers, and dampers are formed in the second silicon layer by wet or dry etching, and nozzles are formed through the intervening oxide layer and the first silicon layer by dry etching, and a method of manufacturing the same.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: April 13, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-chang Lee, Jae-woo Chung, Kyo-yool Lee, Chang-seung Lee, Sung-gyu Kang
  • Patent number: 7625693
    Abstract: A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.
    Type: Grant
    Filed: December 7, 2005
    Date of Patent: December 1, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: O-gweon Seo, Kae-dong Back, Chang-seung Lee, Kyu-sik Kim, Duck-su Kim, Byoung-ho Cheong
  • Patent number: 7545081
    Abstract: A piezoelectric RF micro electro mechanical system (MEMS) device and a method of fabricating the same are provided, in which the RF MEMS device is driven upward at a low voltage based on a piezoelectric effect. The piezoelectric RF MEMS device includes an upper substrate provided with an RF output signal line, a piezoelectric actuator positioned below the RF output signal line, and a lower substrate provided with a cavity so that one end of the piezoelectric actuator is fixed to the lower substrate and its other end is movably spaced apart from the upper and lower substrates, wherein the piezoelectric actuator is provided with an RF input signal line thereon, and a contact pad is provided to connect the RF output signal line with the RF input signal line when the piezoelectric actuator is driven upward.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: June 9, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-seok Kim, In-sang Song, Sang-hun Lee, Sang-wook Kwon, Chang-seung Lee, Young-tack Houng, Che-heung Kim
  • Patent number: 7545246
    Abstract: A piezoelectric Micro Electro Mechanical System (MEMS) switch includes a substrate, first and second fixed signal lines symmetrically formed in a spaced-apart relation to each other on the substrate to have a predetermined gap therebetween, a piezoelectric actuator disposed in alignment with the first and the second fixed signal lines in the predetermined gap, and having a first end supported on the substrate to allow the piezoelectric actuator to be movable up and down, and a movable signal line having a first end connected to one of the first and the second fixed signal lines, and a second end configured to be in contact with, or separate from the other of the first and second fixed signal lines, the movable signal line at least one side thereof being connected to an upper surface of the piezoelectric actuator.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: June 9, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-seok Kim, In-sang Song, Sang-hun Lee, Sang-wook Kwon, Chang-seung Lee, Young-tack Hong, Che-heung Kim
  • Patent number: 7528481
    Abstract: A fabrication method of a wafer level packaging cap for covering a device wafer provided with a device thereon, includes forming an insulating layer on a wafer; removing a predetermined part of the insulating layer and exposing an upper surface of the wafer; forming a cap pad extending from an upper surface and the exposed surface of the wafer; forming a cavity on a lower surface of the wafer corresponding to the cap pad; etching a bottom surface of the cavity and exposing the cap pad which is connected to the wafer through the cavity; and forming metal lines extending from the lower surface of the wafer and the cavity, to electrically connect the cap pad which is exposed through the cavity.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: May 5, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-sung Kim, Woon-Bae Kim, Kyu-dong Jung, Chang-seung Lee