Patents by Inventor Chang-Tsung Pai

Chang-Tsung Pai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20200266344
    Abstract: A resistive random access memory (RRAM) is provided. The RRAM includes a lower electrode, an upper electrode, a first variable resistance layer and a second variable resistance layer. The lower electrode is disposed on a substrate, and is a single electrode or a pair of electrodes electrically connected to each other. The upper electrode is disposed on the lower electrode, and overlaps the lower electrode. The first variable resistance layer and the second variable resistance layer are disposed on the substrate. At least a portion of the first variable resistance layer is disposed between the lower electrode and the upper electrode, and at least a portion of the second variable resistance layer is disposed between the lower electrode and the upper electrode and connected to the first variable resistance layer.
    Type: Application
    Filed: February 19, 2019
    Publication date: August 20, 2020
    Applicant: Winbond Electronics Corp.
    Inventors: Bo-Lun Wu, Chang-Tsung Pai, Ming-Che Lin, Meng-Hung Lin