Patents by Inventor Chang Wook Kim

Chang Wook Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6720729
    Abstract: A field emission display has a cathode, an emitter formed on the cathode, and an anode spaced apart from the cathode at a predetermined distance. The emitter includes an electron emission member having a longitudinal dimension, and an alignment member for aligning the electron emission member. The alignment member is formed with a magnetic material. The electron emission member is aligned by the alignment member such that the longitudinal dimension of the electron emission member is vertically extended from the cathode toward the anode. The electron emission member may be formed with carbon fibers or graphite particles. The magnetic material is coated on the surface of the carbon fibers or incorporated into the internal structure of the carbon fibers.
    Type: Grant
    Filed: March 15, 2000
    Date of Patent: April 13, 2004
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kwi-Seok Choi, Sang-Jin Lee, Jae-Myung Kim, Chang-Wook Kim, Joong-Woo Nam
  • Patent number: 6660570
    Abstract: A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer to serve as a protective layer. The thermal oxide layer forms a good interface with the semi-insulating polycrystalline silicon layer compared to a wet etched oxide layer or a chemical vapor deposition (CVD) oxide layer, thereby decreasing the amount of leakage current. In addition, compared to a dual semi-insulating polycrystalline silicon layer, the thermal oxide layer exhibits a high surface protection effect and a high resistance against dielectric breakdown. It also allows a great reduction in fabrication time.
    Type: Grant
    Filed: May 8, 2002
    Date of Patent: December 9, 2003
    Assignee: Fairchild Korea Semiconductor, Ltd.
    Inventors: Jin-kyeong Kim, Jong-min Kim, Kyung-wook Kim, Tae-hoon Kim, Cheol Choi, Chang-wook Kim
  • Patent number: 6544913
    Abstract: A method of producing alumina-silica ceramic with mullite whisker structure has been produced as armor materials for protecting high velocity projectile. The mixing composition of starting powders consists of alumina, quartz, kaoline, feldspar and talc, and the green compacts were sintered at the temperature range from 1200 to 1450° C. for 0.5 to 3 hours. Mullite whisker structure in the ceramic was fabricated and grown in the period of liquid phase sintering. The whisker phase of mullite is homogeneously distributed in the ceramic.
    Type: Grant
    Filed: January 19, 2001
    Date of Patent: April 8, 2003
    Assignee: Agency for Defense Development
    Inventors: Cheol-Soo Kim, Chang-Wook Kim, Soon-Nam Chang
  • Patent number: 6520711
    Abstract: A shock absorption stand for a road, which is capable of minimizing shock at the time of collision and making a car progress forward by having a roller and by being installed in a roadside, a central line, a pier, a guardrail of bridge or a wall surface of underground roadway. The shock absorption stand for a road includes upper and lower plates, shaft rods mounted between the upper and lower plates in regular intervals, and a plurality of roller rotatably mounted on the shaft rods. The rollers are made of a material capable of absorbing shock, such as rubber, synthetic resin or steel pipes. When the car collides, the shock absorption stand buffs shock and makes the car advance forward in the progressive direction.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: February 18, 2003
    Assignee: Geo Do Industry Co., Ltd.
    Inventor: Chang-Wook Kim
  • Publication number: 20020146283
    Abstract: The present invention relates to a shock absorption stand for a road, which is capable of minimizing shock at the time of collision and making a car progress forward by having a roller and by being installed in a roadside, a central line, a pier, a guardrail of bridge or a wall surface of underground roadway. The shock absorption stand for a road includes upper and lower plates, shaft rods mounted between the upper and lower plates in regular intervals, and a plurality of roller rotatably mounted on the shaft rods. The rollers are made of a material capable of absorbing shock, such as rubber, synthetic resin or steel pipes.
    Type: Application
    Filed: April 10, 2001
    Publication date: October 10, 2002
    Inventor: Chang-Wook Kim
  • Publication number: 20020137621
    Abstract: A method of producing alumina-silica ceramic with mullite whisker structure has been produced as armor materials for protecting high velocity projectile. The mixing composition of starting powders consists of alumina, quartz, kaoline, feldspar and talc, and the green compacts were sintered at the temperature range from 1200 to 1450° C. for 0.5 to 3 hours. Mullite whisker structure in the ceramic was fabricated and grown in the period of liquid phase sintering. The whisker phase of mullite is homogeneously distributed in the ceramic.
    Type: Application
    Filed: January 19, 2001
    Publication date: September 26, 2002
    Applicant: AGENCY FOR DEFENSE DEVELOPMENT
    Inventors: Cheol-Soo Kim, Chang-Wook Kim, Soon-Nam Chang
  • Publication number: 20020130330
    Abstract: A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer to serve as a protective layer. The thermal oxide layer forms a good interface with the semi-insulating polycrystalline silicon layer compared to a wet etched oxide layer or a chemical vapor deposition (CVD) oxide layer, thereby decreasing the amount of leakage current. In addition, compared to a dual semi-insulating polycrystalline silicon layer, the thermal oxide layer exhibits a high surface protection effect and a high resistance against dielectric breakdown. It also allows a great reduction in fabrication time.
    Type: Application
    Filed: May 8, 2002
    Publication date: September 19, 2002
    Inventors: Jin-Kyeong Kim, Jong-Min Kim, Kyung-Wook Kim, Tae-Hoon Kim, Cheol Choi, Chang-Wook Kim
  • Patent number: 6160062
    Abstract: A PDMA polymer for a photosensitive resin composition. The PDMA polymer is obtained by polymerizing an acrylamide, N,N-dimetylacrylamide monomer, and a vinyl-type silane. The PDMA polymer having a molecular weight of 1,000,000.about.
    Type: Grant
    Filed: January 13, 1999
    Date of Patent: December 12, 2000
    Assignee: Samsung Display Devices Co., Ltd.
    Inventors: Chang-wook Kim, Eak-Cheol Eam, Seung-Jun You, Eun-Ha Hu, Gi-Wook Kang
  • Patent number: 6146230
    Abstract: An electron emitter composition comprising electron emitting materials, dispersion agent, binder, and pure water is provided.An electron emitter of an FED is produced by the steps of forming a photoresist layer by coating and drying a photoresist composition on an electrode formed on a back plate (cathode plate); exposing and developing the photoresist layer into a predetermined pattern using a mask; forming an electron emitting layer by coating and drying an electron emitter composition consisting of electron emitting materials, a binder, a dispersion agent, and pure water on the developed photoresist layer; exposing the photoresist layer by etching the electron emitting layer; and washing and drying it after stripping the exposed photoresist layer.
    Type: Grant
    Filed: September 24, 1999
    Date of Patent: November 14, 2000
    Assignee: Samsung Display Devices Co., Ltd.
    Inventors: Chang-Wook Kim, Kwi-Seok Choi, Sang-Jin Lee, Jae-Myung Kim, Joong-Woo Nam
  • Patent number: 6127074
    Abstract: The present invention relates to photoresist solution for phosphor slurry for use in the color cathode ray tube. The photoresist solution of the present invention comprises Diazo or Bisazide photosensitizer; polymer. which is mixed with said Diazo or Bisazide photosensitizer, obtained by polymerization of hydroxy ethyl acrylate base. The photoresist solution of the present invention improves the adhesive strength by using of the Diazo or Bisazide photosensitizer and the polymer, thus the green, blue and red phosphor screen being uniformly formed and the color residue being disappeared. Further, since the photosensitizer not containing heavy metal is used, it does not cause any environmental problem. Also, it can be stored for a long time by using the initiator without hydrochloric acid at the time of polymerization.
    Type: Grant
    Filed: December 11, 1998
    Date of Patent: October 3, 2000
    Assignee: Samsung Display Devices Co., Ltd.
    Inventors: Seung-Jun You, Eak-Cheol Eam, Young-Jong Kang, Chang-Wook Kim, Gi-Wook Kang, Eun-Ha Heo
  • Patent number: 5885744
    Abstract: A photoresist composition containing a photo-curing polymer and a photosensitive agent, wherein the photosensitive agent comprises at least two compounds selected from the group consisting of 4,4'-diazido-2,2'-stilbenedisulfonate sodium salt, 4,4'-diazo-2,2'-dibenzalacetone disulfonate disodium salt, 2,5-bis(4-azido-2-sulfobenzylidene) cyclopentanone disodium salt and 4,4'-diazido-2,2'-dicinnamylideneacetone sulfonate salt. By performing a lithography process using the photoresist composition, the exposure time can be shortened, thereby improving the yield of products.
    Type: Grant
    Filed: July 14, 1997
    Date of Patent: March 23, 1999
    Assignee: Samsung Display Devices Co., Ltd.
    Inventors: Seung-joon Yoo, Ik-chul Lim, Chang-wook Kim, Ki-wook Kang