Abstract: Example embodiments relate to a method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide. A method according to example embodiments may include providing a substrate having at least a portion formed of silicon germanium. A metal layer may be formed on the silicon germanium. A thermal process may be performed on the substrate at a relatively high pressure to form the germanosilicide.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.

Abstract: A non-volatile memory device comprises a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the lower electrode is composed of at least one of Pt, Ru, Ir, IrOx and an alloy thereof, the second oxide layer is a transition metal oxide, the buffer layer is composed of a p-type oxide and the upper electrode is composed of a material selected from Ni, Co, Cr, W, Cu or an alloy thereof.

Abstract: An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

Abstract: Provided are a storage node, a nonvolatile memory device, methods of fabricating the same and a method of operating the nonvolatile memory device. The storage node may include a lower metal layer and a first insulation layer, an intermediate metal layer, a second insulation layer, an upper metal layer and a nano layer, which are sequentially stacked on the lower metal layer. The nonvolatile memory device may include a switching device and the storage node connected to the switching device.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: A surface electron emission device array and a TFT inspection system for inspecting a TFT array using a surface electron emission device array may be provided. The TFT inspection system may include a surface electron emission device array, which may have a first electrode disposed to face the TFT array in a first direction, a second electrode disposed in a second direction intersecting the first direction in a region corresponding to a region in which the first electrode and a corresponding pixel electrode of the TFT array may be formed, and an insulating layer interposed between the first electrode and the second electrode.

Abstract: Provided are a surface electron emission device and a display device having the same. The surface electron emission device may include a lower electrode, an insulating layer, and an upper electrode sequentially stacked, and a nano structure layer formed on the upper electrode.

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract: A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error.

Abstract: An electron beam lithography apparatus for providing one-to-one or x-to-one projection of a pattern includes a pyroelectric emitter, which is disposed a predetermined distance apart from a substrate holder, the pyroelectric emitter including a pyroelectric plate having a dielectric plate on a surface thereof and a patterned semiconductor thin film on the dielectric plate facing the substrate holder, a heating source for heating the pyroelectric emitter, and either a pair of magnets disposed beyond the pyroelectric emitter and the substrate holder, respectively, or a deflection unit disposed between the pyroelectric emitter and the substrate holder, to control paths of electrons emitted by the pyroelectric emitter. In operation, when the pyroelectric emitter is heated in a vacuum, electrons are emitted from portions of the pyroelectric plate that are not covered by the patterned semiconductor thin film.

Abstract: A method and apparatus for fabricating an emitter by colliding an arc with the surface of a wafer inside a vacuum chamber are provided. The apparatus includes: a vacuum chamber in which a wafer is inserted; a magnetic field generating unit for generating a uniform magnetic field inside the vacuum chamber; an electric field generating unit for forming an electric field parallel to the magnetic field inside the vacuum chamber; and a master emitter for emitting electrons towards the wafer. The electrons emitted from the master emitter move along the magnetic field and the electric field. The arc is generated when the electric field or the driving voltage surpasses a threshold by controlling the strength of the electric field and the driving voltage of the master emitter. Thus, the surface of the wafer is instantaneously melted and solidified by the arc, thereby forming the emitter with a sharp tip on the surface of the wafer.

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract: A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error.

Abstract: A focusing apparatus and a lithography system using the same capable of adjusting a uniformity of an electromagnetic field by moving a portion of a magnetic field generator. The focusing apparatus may control a path of an electron beam generated from an electron-beam emitter of the lithography system. In the focusing apparatus, a uniformity of the magnetic field in the vacuum chamber may be adjusted through movement of the portion of the magnetic field generator with respect to the vacuum chamber.

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.