Patents by Inventor Chang-youl Moon

Chang-youl Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9515189
    Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: December 6, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Xianyu Wenxu, Woo-young Yang, Chang-youl Moon, Yong-young Park, Jeong-yub Lee
  • Patent number: 9337029
    Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: May 10, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xianyu Wenxu, Yeon-hee Kim, Chang-youl Moon, Yong-young Park
  • Patent number: 9293596
    Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: March 22, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wenxu Xianyu, Chang-youl Moon, Jeong-yub Lee, Chang-seung Lee
  • Patent number: 9257508
    Abstract: Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung Lee, Joo-ho Lee, Yong-sung Kim, Jun-seong Kim, Chang-youl Moon
  • Publication number: 20160035898
    Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.
    Type: Application
    Filed: October 9, 2015
    Publication date: February 4, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Xianyu WENXU, Woo-young Yang, Chang-youl Moon, Yong-young Park, Jeong-yub Lee
  • Patent number: 9196478
    Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: November 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-ho Lee, Yong-sung Kim, Chang-youl Moon, Sung-hee Lee, Chang-seung Lee
  • Patent number: 9184052
    Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: November 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xianyu Wenxu, Woo-young Yang, Chang-youl Moon, Yong-young Park, Jeong-yub Lee
  • Publication number: 20150214037
    Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
    Type: Application
    Filed: April 9, 2015
    Publication date: July 30, 2015
    Inventors: Xianyu WENXU, Yeon-hee Kim, Chang-youl Moon, Yong-young Park
  • Patent number: 9082844
    Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: July 14, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-hyoung Cho, Jun-Hee Choi, Jin-seung Sohn, Chang-youl Moon
  • Publication number: 20150179814
    Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
    Type: Application
    Filed: March 9, 2015
    Publication date: June 25, 2015
    Inventors: Wenxu XIANYU, Chang-youl MOON, Jeong-yub LEE, Chang-seung LEE
  • Patent number: 9056424
    Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: June 16, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xianyu Wenxu, Jeong-yub Lee, Chang-youl Moon, Yong-young Park, Woo-young Yang, Yong-sung Kim, Joo-ho Lee
  • Publication number: 20150144918
    Abstract: An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that has a higher refractive index than a refractive index of the low refractive index pattern layer, and imprinting the low refractive index pattern layer on the high refractive index material layer to form a high refractive index pattern layer, on a first surface of a substrate.
    Type: Application
    Filed: November 21, 2014
    Publication date: May 28, 2015
    Inventors: Eun-hyoung CHO, Woong KO, Jae-kwan KIM, Chang-youl MOON, Hong-shik SHIM, In-kyeong YOO, Chul-ho JEONG
  • Patent number: 9041999
    Abstract: In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: May 26, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-deok Bae, Jun-sik Hwang, Chang-youl Moon, Yoon-sun Choi, Jung-mok Bae, Chang-seung Lee, Eok-su Kim
  • Patent number: 9029860
    Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: May 12, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xianyu Wenxu, Yeon-hee Kim, Chang-youl Moon, Yong-young Park
  • Patent number: 9006044
    Abstract: A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 14, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-seung Lee, Joo-ho Lee, Yong-sung Kim, Chang-youl Moon
  • Patent number: 8999812
    Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: April 7, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wenxu Xianyu, Chang-youl Moon, Jeong-yub Lee, Chang-seung Lee
  • Patent number: 9000485
    Abstract: An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
    Type: Grant
    Filed: June 6, 2012
    Date of Patent: April 7, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-yub Lee, Wenxu Xianyu, Chang-youl Moon, Yong-young Park, Woo-young Yang, In-jun Hwang
  • Patent number: 8921220
    Abstract: A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: December 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xianyu Wenxu, Jeong-Yub Lee, Chang -youl Moon, Yong-Young Park, Woo Young Yang, Jae-Joon Oh, In-Jun Hwang
  • Publication number: 20140335681
    Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.
    Type: Application
    Filed: May 2, 2014
    Publication date: November 13, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joo-ho LEE, Yong-sung KIM, Chang-youl MOON, Sung-hee LEE, Chang-seung LEE
  • Patent number: 8877572
    Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: November 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-ho Lee, Yong-seok Jung, Yong-sung Kim, Chang-seung Lee, Chang-youl Moon