Abstract: The present disclosure relates to the preparation of citrullinated vimentin antigen-specific immune tolerogenic dendritic cells and a composition for preventing or treating heart failure after myocardial infarction comprising the same. According to the present disclosure, it is confirmed that immune tolerogenic dendritic cells differentiated by treating immature dendritic cells with citrullinated vimentin regulate the expression of immune-related factors and have an excellent therapeutic effect on heart failure caused by myocardial infarction.

Abstract: A display device includes: a backlight unit, a camera hole penetrating the backlight unit, a camera in the camera hole, a liquid crystal panel on the backlight unit, the liquid crystal panel including a transparent portion on the camera hole, and at least one light-blocking member in the camera hole, the at least one light-blocking member being configured to reduce one or more of: light leakage from the camera hole and introduction of impurities into the camera hole.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: Provided is a duct docking device for a ventilation seat of a vehicle. The duct docking device enables air to be easily blown to a seatback and a seat cushion with a passenger in a seat using only one blower by enabling a seatback duct mounted at the seatback and a seat cushion duct mounted at the seat cushion to be hermetically docked through a connector duct, etc. at an unfolded position of the seatback in which a passenger can sit, and by enabling the seatback duct mounted at the seatback and the seat cushion duct mounted at the seat cushion to be separated from each other at a folded position of the seatback in consideration of that there is no passenger in the seat.

Abstract: A semiconductor device, and a method of operating the same, includes a memory cell array, a peripheral circuit, and control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit is configured to perform a program operation on memory cells selected from among the plurality of memory cells. The control logic is configured to control the program operation of the peripheral circuit. The control logic is configured to control the peripheral circuit to precharge bit lines respectively coupled to the selected memory cells to different voltage levels during a verify operation included in the program operation.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: A method of performing embedded compression (EC) on image data includes receiving decoded image data; determining a block size of image data waiting for embedded compression from among the received image data; and comparing the determined block size of the image data waiting for embedded compression with an EC block size that is an embedded compression unit, the method further including: if the determined block size of the image data waiting for embedded compression is equal to or greater than the EC block size, embedding and compressing the received image data; and if the determined block size of the image data waiting for embedded compression is smaller than the EC block size, storing tag information of the received image data.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: According to an embodiment of the present disclosure, an electronic device may comprise a memory and a processor configured to produce compressed data by compressing data including a first block and a second block stored in the memory, wherein the processor may be configured to include a first replacement data table corresponding to first sub-data in the compressed data, the first sub-data included in the first block, and the first replacement data table produced based on, at least, rankings of first frequencies for the first sub-data, and include information for reference to the first replacement data table, corresponding to the second block, when second sub-data included in the second block and rankings of second frequencies for the second sub-data meet a designated condition with respect to the first sub-data included in the first block and the rankings of the first frequencies. Other embodiments are also possible.

Abstract: A video decoding method includes obtaining a motion vector of a current block belonging to a first picture from a bitstream, performed by a first decoding unit; determining whether a reference block indicated by the motion vector is decoded, performed by the first decoding unit; and decoding the current block, based on whether the reference block is decoded. The reference block is included in a second picture decoded by a second decoding unit. The first picture and the second picture are decoded in parallel.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Provided are a method and an apparatus for decoding an image by accessing a memory by a block group. The method comprises checking information regarding a size of one or more blocks included in a bitstream of an encoded image, determining whether to group one or more blocks for performing decoding, based on the information regarding the size of the one or more blocks, setting a block group including one or more blocks based on the information regarding the size of the one or more blocks, and accessing a memory by the block group to perform a parallel-pipeline decoding process by the block group.

Abstract: According to an embodiment of the present disclosure, an electronic device may comprise a memory and a processor configured to produce compressed data by compressing data including a first block and a second block stored in the memory, wherein the processor may be configured to include a first replacement data table corresponding to first sub-data in the compressed data, the first sub-data included in the first block, and the first replacement data table produced based on, at least, rankings of first frequencies for the first sub-data, and include information for reference to the first replacement data table, corresponding to the second block, when second sub-data included in the second block and rankings of second frequencies for the second sub-data meet a designated condition with respect to the first sub-data included in the first block and the rankings of the first frequencies. Other embodiments are also possible.

Abstract: A method of performing embedded compression (EC) on image data includes receiving decoded image data; determining a block size of image data waiting for embedded compression from among the received image data; and comparing the determined block size of the image data waiting for embedded compression with an EC block size that is an embedded compression unit, the method further including: if the determined block size of the image data waiting for embedded compression is equal to or greater than the EC block size, embedding and compressing the received image data; and if the determined block size of the image data waiting for embedded compression is smaller than the EC block size, storing tag information of the received image data.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Disclosed is a fuel processor. The fuel processor includes: a steam reformer unit configured to be disposed at an upper portion in a casing; a heat exchanger unit configured to be disposed at a lower portion of the steam reformer unit; a high temperature shift reforming unit configured to be disposed at a lower portion of the heat exchanger unit; a low temperature shift reforming unit configured to be disposed while enclosing an outer portion of the high temperature shift reforming unit; and a heat exchange chamber configured to be disposed at a lower portion of the high temperature shift reforming unit and exchange heat between reformed gas and a heat exchange fluid supplied through a channel part formed to drain the reformed gas and combustion gas and supply the heat exchange fluid.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes an interlayer dielectric layer disposed over a substrate, and having a recess which exposes a portion of the substrate; a bottom contact partially filling the recess; and a resistance variable element including a bottom layer which fills at least a remaining space of the recess over the bottom contact, and a remaining layer which is disposed over the bottom layer and protrudes out of the interlayer dielectric layer.