Abstract: An integrated circuit structure includes a semiconductor substrate; a gate stack overlying the semiconductor substrate; a gate spacer on a sidewall of the gate stack; a first contact plug having an inner edge contacting a sidewall of the gate spacer, and a top surface level with a top surface of the gate stack; and a second contact plug over and contacting the first contact plug. The second contact plug has a cross-sectional area smaller than a cross-sectional area of the first contact plug.

Abstract: A semiconductor structure includes a first conductive layer coupled to a transistor. A first dielectric layer is over the first conductive layer. A second conductive layer is within the first dielectric layer, contacting a portion of a top surface of the first conductive layer. The second conductive layer includes a cap portion extending above a top surface of the first dielectric layer. A first dielectric spacer is between the first dielectric layer and the second conductive layer. A phase change material layer is above a top surface of the second conductive layer. A third conductive layer is over the phase change material layer. A second dielectric layer is over the first dielectric layer. A second dielectric spacer is on a sidewall of the cap portion, wherein a thermal conductivity of the second dielectric spacer is less than that of the first dielectric layer or that of the second dielectric layer.

Abstract: A method of fabricating a layer with a tiny structure and a thin film transistor comprising the same is disclosed. The method of fabricating the layer with a tiny structure comprises providing a substrate, coating a coating composition on the substrate to form a coating layer, wherein the coating composition comprises nano conductive particles or nano semiconductor particles having functional groups bonded on a surface thereof uniformly dispersed in a solvent, and irradiating the coating layer by an additional energy to break the functional groups, resulting in aggregation of nano conductive particles or nano semiconductor particles to form a tiny structure.

Abstract: A semiconductor structure includes a transistor over a substrate, the transistor comprising a gate and a contact region, which is adjacent to the gate and within the substrate. A first dielectric layer is over the contact region. A contact structure is within the first dielectric layer and over the contact region. A first electrode and a second electrode are within the first dielectric layer, wherein at least one of the first electrode and the second electrode is over the contact structure. The first electrode and second electrodes may be laterally or vertically separated. A phase change structure is disposed between the first electrode and the second electrode. The phase change structure includes at least one spacer within the first dielectric layer and a phase change material (PCM) layer over the spacer.

Abstract: A semiconductor structure includes a first conductive layer coupled to a transistor. A first dielectric layer is over the first conductive layer. A second conductive layer is within the first dielectric layer, contacting a portion of a top surface of the first conductive layer. The second conductive layer includes a cap portion extending above a top surface of the first dielectric layer. A first dielectric spacer is between the first dielectric layer and the second conductive layer. A phase change material layer is above a top surface of the second conductive layer. A third conductive layer is over the phase change material layer. A second dielectric layer is over the first dielectric layer. A second dielectric spacer is on a sidewall of the cap portion, wherein a thermal conductivity of the second dielectric spacer is less than that of the first dielectric layer or that of the second dielectric layer.

Abstract: An improved lamp holder for a high intensity discharge (HID) lamp includes a base and a metallic positioning member, in which the metallic positioning member includes a vibration-damping clamping ring having three extension feet extending outwards and downwards from a bottom rim of the clamping ring and inserted into their respective corresponding insertion slots of the base; and the clamping ring clips a lamp tube.

Abstract: An improved lamp holder for a high intensity discharge (HID) lamp includes a base and a metallic positioning member, in which the metallic positioning member includes a vibration-damping clamping ring having three extension feet extending outwards and downwards from a bottom rim of the clamping ring and inserted into their respective corresponding insertion slots of the base; and the clamping ring clips a lamp tube.