Abstract: An air admittance valve preventing mephitis overflow, having a main body with an air entry guide base defining an air entry guide; a pivot support; and a valve seat. A sealing valve group having a sealing valve body that defines a recess; a flexible member; a pivot housing; and a pivot. The valve seat is located about the air entry guide. The pivot is located in the pivot housing and the pivot support, and the pivot is located along, or adjacent to, the center of gravity of the sealing valve body. The flexible member is at least partially located in the recess and abuts the main body; and when the air admittance valve is closed, the sealing valve body abuts the valve seat.

Abstract: An air admittance valve preventing mephitis overflow, having a main body with an air entry guide base defining an air entry guide; a pivot support; and a valve seat. A sealing valve group having a sealing valve body that defines a recess; a flexible member; a pivot housing; and a pivot. The valve seat is located about the air entry guide. The pivot is located in the pivot housing and the pivot support, and the pivot is located along, or adjacent to, the center of gravity of the sealing valve body. The flexible member is at least partially located in the recess and abuts the main body; and when the air admittance valve is closed, the sealing valve body abuts the valve seat.

Abstract: A quick connector structure includes a fitting connector, a connector, and a U-shaped positioning snap pin. The fitting connector is a pipe connector, a three-way valve connector, or a washing machine valve connector. The fitting connector is combined with a pipe body. The U-shaped positioning snap pin ensures the stability of the connection between the fitting connector and the connector. The quick connector structure enables rapid positioning and assembly, reducing the assembly difficulty in a smaller or concealed space and achieving the effects of assembly stability and convenience.

Abstract: A valve structure with an elastic anti-leakage member includes a spool, a seat, and a switch. The spool body has at least one inner notch formed on the side of the spool body, and the inner notch has at least one elastic anti-leakage member installed in the inner notch. The spool is contained inside the seat, and the elastic anti-leakage member is located in the inner chamber of the inner notch and has a surface elastically abutting the internal cavity wall of the inner chamber.

Abstract: A valve structure with an elastic anti-leakage member includes a spool, a seat, and a switch. The spool body has at least one inner notch formed on a side of the spool body, and the inner notch has at least one elastic anti-leakage member installed in the inner notch, and the seat has an inner chamber with an internal cavity wall. The spool is contained in an inner of the seat, and the elastic anti-leakage member installed in the inner chamber of the inner notch of the spool body has a surface elastically abutting against the internal cavity wall of the inner chamber of the seat to achieve a good water anti-leakage effect.

Abstract: A valve structure with an elastic anti-leakage member includes a spool, a seat, and a switch. The spool body has at least one inner notch formed on a side of the spool body, and the inner notch has at least one elastic anti-leakage member installed in the inner notch, and the seat has an inner chamber with an internal cavity wall. The spool is contained in an inner of the seat, and the elastic anti-leakage member installed in the inner chamber of the inner notch of the spool body has a surface elastically abutting against the internal cavity wall of the inner chamber of the seat to achieve a good water anti-leakage effect.

Abstract: An air admittance valve preventing mephitis overflow, having a main body with an air entry guide base defining an air entry guide; a pivot support; and a valve seat. A sealing valve group having a sealing valve body that defines a recess; a flexible member; a pivot housing; and a pivot. The valve seat is located about the air entry guide. The pivot is located in the pivot housing and the pivot support, and the pivot is located along, or adjacent to, the center of gravity of the sealing valve body. The flexible member is at least partially located in the recess and abuts the main body; and when the air admittance valve is closed, the sealing valve body abuts the valve seat.

Abstract: An air admittance valve preventing mephitis overflow, having a main body with an air entry guide base defining an air entry guide; a pivot support; and a valve seat. A sealing valve group having a sealing valve body that defines a recess; a flexible member; a pivot housing; and a pivot. The valve seat is located about the air entry guide. The pivot is located in the pivot housing and the pivot support, and the pivot is located along, or adjacent to, the center of gravity of the sealing valve body. The flexible member is at least partially located in the recess and abuts the main body; and when the air admittance valve is closed, the sealing valve body abuts the valve seat.

Abstract: The present invention discloses an input/output (I/O) signal processing circuit and processing method. The I/O signal processing circuit includes a level adjustable I/O circuit and an adjustment circuit. The I/O signal processing circuit includes an output driver and/or an input comparator. The output driver transmits an output signal via a signal transmission line according to an output data. The output driver has an adjustable high operation voltage level and an adjustable low operation voltage level, which determine a high level and a low level of the output signal, respectively. The input comparator receives an input signal via the signal transmission line and comparing the input signal with an adjustable reference voltage, so as to generate an input data. The adjustment circuit generates an adjustment signal according to voltage drop related information, to correspondingly adjust the adjustable high and low operation voltage level and/or the adjustable reference voltage.

Abstract: The present invention discloses an input/output (I/O) signal processing circuit and processing method. The I/O signal processing circuit includes a level adjustable I/O circuit and an adjustment circuit. The I/O signal processing circuit includes an output driver and/or an input comparator. The output driver transmits an output signal via a signal transmission line according to an output data. The output driver has an adjustable high operation voltage level and an adjustable low operation voltage level, which determine a high level and a low level of the output signal, respectively. The input comparator receives an input signal via the signal transmission line and comparing the input signal with an adjustable reference voltage, so as to generate an input data. The adjustment circuit generates an adjustment signal according to voltage drop related information, to correspondingly adjust the adjustable high and low operation voltage level and/or the adjustable reference voltage.

Abstract: An air admittance valve preventing mephitis overflow, having a main body with an air entry guide base defining an air entry guide; a pivot support; and a valve seat. A sealing valve group having a sealing valve body that defines a recess; a flexible member; a pivot housing; and a pivot. The valve seat is located about the air entry guide. The pivot is located in the pivot housing and the pivot support, and the pivot is located along, or adjacent to, the center of gravity of the sealing valve body. The flexible member is at least partially located in the recess and abuts the main body; and when the air admittance valve is closed, the sealing valve body abuts the valve seat.

Abstract: The present invention discloses an input/output (I/O) signal processing circuit and processing method. The I/O signal processing circuit includes a level adjustable I/O circuit and an adjustment circuit. The I/O signal processing circuit includes an output driver and/or an input comparator. The output driver transmits an output signal via a signal transmission line according to an output data. The output driver has an adjustable high operation voltage level and an adjustable low operation voltage level, which determine a high level and a low level of the output signal, respectively. The input comparator receives an input signal via the signal transmission line and comparing the input signal with an adjustable reference voltage, so as to generate an input data. The adjustment circuit generates an adjustment signal according to voltage drop related information, to correspondingly adjust the adjustable high and low operation voltage level and/or the adjustable reference voltage.

Abstract: The present invention discloses an input/output (I/O) signal processing circuit and processing method. The I/O signal processing circuit includes a level adjustable I/O circuit and an adjustment circuit. The I/O signal processing circuit includes an output driver and/or an input comparator. The output driver transmits an output signal via a signal transmission line according to an output data. The output driver has an adjustable high operation voltage level and an adjustable low operation voltage level, which determine a high level and a low level of the output signal, respectively. The input comparator receives an input signal via the signal transmission line and comparing the input signal with an adjustable reference voltage, so as to generate an input data. The adjustment circuit generates an adjustment signal according to voltage drop related information, to correspondingly adjust the adjustable high and low operation voltage level and/or the adjustable reference voltage.

Abstract: A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.

Abstract: Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate having a first device region and a second device region. The semiconductor device structure further includes first devices in the first device region and second devices in the second device region. The semiconductor device structure also includes a first annular structure continuously surrounding the first device region and a second annular structure continuously surrounding the second device region. The first annular structure has a first thermal diffusion coefficient less than a second thermal diffusion coefficient of the second annular structure.

Abstract: Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate having a first device region and a second device region. The semiconductor device structure further includes first devices in the first device region and second devices in the second device region. The semiconductor device structure also includes a first annular structure continuously surrounding the first device region and a second annular structure continuously surrounding the second device region. The first annular structure has a first thermal diffusion coefficient less than a second thermal diffusion coefficient of the second annular structure.

Abstract: Methods and systems for predicting semiconductor device performance criteria during processing. A method is described that includes receiving a semiconductor wafer; performing semiconductor processing on the semiconductor wafer forming active devices that, when completed, will exhibit a device performance criteria; during the semiconductor processing, measuring in line at least one device performance criteria related physical parameter; projecting an estimated value for the device performance criteria of the active devices using the at least one in line measurement and using estimated measurements for device performance criteria related physical parameters corresponding to later semiconductor processing steps; comparing the estimated value for the device performance criteria to an acceptable range; and determining, based on the comparing, whether the active devices on the semiconductor wafer will have a device performance criteria within the acceptable range.

Abstract: A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.

Abstract: A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.

Abstract: Methods and systems for predicting semiconductor device performance criteria during processing. A method is described that includes receiving a semiconductor wafer; performing semiconductor processing on the semiconductor wafer forming active devices that, when completed, will exhibit a device performance criteria; during the semiconductor processing, measuring in line at least one device performance criteria related physical parameter; projecting an estimated value for the device performance criteria of the active devices using the at least one in line measurement and using estimated measurements for device performance criteria related physical parameters corresponding to later semiconductor processing steps; comparing the estimated value for the device performance criteria to an acceptable range; and determining, based on the comparing, whether the active devices on the semiconductor wafer will have a device performance criteria within the acceptable range.