Abstract: An oscillator includes an oscillator circuit and a voltage circuit. The oscillator circuit includes a first transistor. The voltage circuit is configured to, in a small signal mode, provide a voltage swing at a source of the first transistor, a gate-to-source voltage of the first transistor being associated with whether the oscillator is able to generate an oscillator signal.

Abstract: A semiconductor device for simultaneous operation at two temperature ranges includes a substrate, a first transistor, and a second transistor. The substrate has a first active region and a second active region. The first transistor includes a plurality of gate stacks disposed in the first active region. The second transistor includes a plurality of gate stacks disposed in the second active region. A ratio of the number of the gate stacks of the second transistor to an area size of the second active region is less than a ratio of the number of the gate stacks of the first transistor to an area size of the first active region.

Abstract: According to some embodiments, an integrated circuit device is disclosed. The integrated circuit device include at least one inductor having at least one turn, a magnetic coupling ring positioned adjacent to the at least one inductor, the magnetic coupling ring comprising at least two magnetic coupling turns, the at least two magnetic coupling turns are disposed adjacent to the at least one turn to enable magnetic coupling between the at least two magnetic coupling turns and the at least one turn The integrated circuit device also includes a power electrode and a ground electrode, wherein the power electrode and the ground electrode are coupled to the at least one inductor and the magnetic coupling ring to provide a first current in the at least one inductor having a direction opposite to a second current in the magnetic coupling ring to cancel at least a portion of a magnetic field generated by the at least one inductor.

Abstract: In some embodiments, a capacitor device includes a metal-oxide-metal (MOM) capacitor array and a varactor array configured overlapping with the MOM capacitor array. The MOM capacitor array includes a first MOM capacitor unit. The first MOM capacitor unit includes a first electrode pattern and a second electrode pattern in a first metallization layer. The first electrode pattern includes a plurality of first fingers and a first bus interconnecting the plurality of first fingers. The second electrode pattern includes a plurality of second fingers and a second bus interconnecting the plurality of second fingers. The varactor array includes a first varactor unit. The first varactor unit includes a first electrode contacting region and a second electrode contacting region. The first electrode pattern contacts the first electrode contacting region. The second electrode pattern contacts the second electrode contacting region.

Abstract: A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.

Abstract: A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.

Abstract: A device is disclosed that includes an oscillator, a frequency detector, and a selection circuit. The oscillator is configured to generate an oscillating signal. The oscillator includes a first tuning bank and a second tuning bank. The first tuning bank is configured to adjust the frequency of the oscillating signal within a first frequency band. The second tuning bank is configured to adjust the frequency of the oscillating signal within a second frequency band. The frequency detector is configured to generate a control signal according to at least one signal indicating the frequency of the oscillating signal. The selection circuit is configured to activate at least one of the first tuning bank and the second tuning bank according to the control signal.

Abstract: A flicker noise measurement circuit includes a first section. The first section includes a plurality of first stages connected in series. The first section includes a first feedback switching element configured to selectively feedback an output of the plurality of first stages to an input of the plurality of first stages. The first section includes a first section connection switching element. The flicker noise measurement circuit includes a second section connected to the first section. The second section includes a plurality of second stages connected in series, wherein the first section connection switching element is configured to selectively connect the plurality of second stages to the plurality of first stages. The second section includes a second feedback switching element configured to selectively feedback an output of the plurality of second stages to the input of the plurality of first stages.

Abstract: A semiconductor device for simultaneous operation at two temperature ranges includes a substrate, a first transistor, and a second transistor. The substrate has a first active region and a second active region. The first transistor includes a plurality of gate stacks disposed in the first active region. The second transistor includes a plurality of gate stacks disposed in the second active region. A ratio of the number of the gate stacks of the second transistor to an area size of the second active region is less than a ratio of the number of the gate stacks of the first transistor to an area size of the first active region.

Abstract: Structures and methods are provided for fabricating a ring oscillator including a plurality of stages. An example multi-layer structure includes a first device layer, a second device layer, and an inter-level connection structure. The first device layer includes a first transistor structure associated with a first stage of a ring oscillator. The second device layer is formed on the first device layer and includes a second transistor structure associated with a second stage of the ring oscillator. Further, the first inter-level connection structure includes one or more first conductive materials and is configured to electrically connect to the first transistor structure and the second transistor structure.

Abstract: A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.

Abstract: A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.

Abstract: In some embodiments, a capacitor device includes a metal-oxide-metal (MOM) capacitor array and a varactor array configured overlapping with the MOM capacitor array. The MOM capacitor array includes a first MOM capacitor unit. The first MOM capacitor unit includes a first electrode pattern and a second electrode pattern in a first metallization layer. The first electrode pattern includes a plurality of first fingers and a first bus interconnecting the plurality of first fingers. The second electrode pattern includes a plurality of second fingers and a second bus interconnecting the plurality of second fingers. The varactor array includes a first varactor unit. The first varactor unit includes a first electrode contacting region and a second electrode contacting region. The first electrode pattern contacts the first electrode contacting region. The second electrode pattern contacts the second electrode contacting region.

Abstract: Structures and methods are provided for fabricating a ring oscillator including a plurality of stages. An example multi-layer structure includes a first device layer, a second device layer, and an inter-level connection structure. The first device layer includes a first transistor structure associated with a first stage of a ring oscillator. The second device layer is formed on the first device layer and includes a second transistor structure associated with a second stage of the ring oscillator. Further, the first inter-level connection structure includes one or more first conductive materials and is configured to electrically connect to the first transistor structure and the second transistor structure.

Abstract: A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.

Abstract: Among other things, one or more techniques and systems for generating a common design rule check (DRC) rule set for verification of a design layout and for generating a common dummy insertion utility for design layout processing are provided. That is, the common DRC rule set comprises a set of design rules having design rule constraint values corresponding to a restriction threshold, such as a most restrictive value. The common dummy insertion utility is used to insert dummy polygons into a design layout according to a dummy size constraint and a dummy spacing constraint. The design layout is verified as compliant with the common DRC rule set. Once verified, the design layout can be converted from a universal design layout format to a target metal scheme to create a transformed design layout. In this way, design layouts, formatted according to the universal design layout, can be transformed to other formats.

Abstract: A ring-based multi-push voltage-controlled oscillator (VCO) generates a multi-push output signal using a control voltage. The ring-based multi-push VCO includes a plurality of delay cells, a plurality of buffer amplifiers, and a bias unit. The delay cells connect each other in sequence to form a ring structure, and each delay cell connects with the respective buffer amplifier. The bias unit connects with the buffer amplifiers to output the multi-push output signal. The control voltage supplied to the delay cells is utilized to control the frequency of the multi-push output signal, and the ring structure formed by the delay cells is to multiply the frequency of the multi-push output signal to increase the frequency tuning range.

Abstract: A ring-based multi-push voltage-controlled oscillator (VCO) with the control voltage to generate the multi-push output signal is disclosed. The ring-based multi-push VCO includes a plurality of delay cells, a plurality of buffer amplifiers, and a bias unit. The delay cells connect each other in sequence to form a ring structure, and each delay cell connects with the respective buffer amplifier. The bias unit connects with the buffer amplifiers to output the multi-push output signal. The control voltage supplied to the delay cells is utilized to control the frequency of the multi-push output signal, and the ring structure formed by delay cells is to multiply the frequency tuning range.