Patents by Inventor Chao-Ching Chang
Chao-Ching Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154025Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode proximate to the isolation regions, where after removing the lower portions, there is a gap between the isolation regions and a lower surface of the dummy gate electrode facing the isolation regions; filling the gap with a gate fill material; after filling the gap, forming gate spacers along sidewalls of the dummy gate electrode and along sidewalls of the gate fill material; and replacing the dummy gate electrode and the gate fill material with a metalType: ApplicationFiled: January 10, 2024Publication date: May 9, 2024Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
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Publication number: 20240126327Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.Type: ApplicationFiled: October 14, 2022Publication date: April 18, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chao Wei LIU, Wei-Hao CHANG, Yung-I YEH, Jen-Chieh KAO, Tun-Ching PI, Ming-Hung CHEN, Hui-Ping JIAN, Shang-Lin WU
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Publication number: 20240096705Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.Type: ApplicationFiled: November 30, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
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Publication number: 20240096893Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.Type: ApplicationFiled: November 24, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shih-Yao Lin, Chao-Cheng Chen, Chih-Han Lin, Ming-Ching Chang, Wei-Liang Lu, Kuei-Yu Kao
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Publication number: 20230378115Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.Type: ApplicationFiled: July 23, 2023Publication date: November 23, 2023Inventors: Hsin-Chi CHEN, Hsun-Ying HUANG, Chih-Ming LEE, Shang-Yen WU, Chih-An YANG, Hung-Wei HO, Chao-Ching CHANG, Tsung-Wei HUANG
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Publication number: 20230369516Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.Type: ApplicationFiled: July 18, 2023Publication date: November 16, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU
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Patent number: 11756913Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.Type: GrantFiled: June 15, 2022Date of Patent: September 12, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chi Chen, Hsun-Ying Huang, Chih-Ming Lee, Shang-Yen Wu, Chih-An Yang, Hung-Wei Ho, Chao-Ching Chang, Tsung-Wei Huang
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Patent number: 11749760Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: GrantFiled: May 13, 2022Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han Lin, Chao-Ching Chang, Yi-Ming Lin, Yen-Ting Chou, Yen-Chang Chen, Sheng-Chan Li, Cheng-Hsien Chou
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Publication number: 20230268367Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: ApplicationFiled: April 28, 2023Publication date: August 24, 2023Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN
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Patent number: 11652124Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: GrantFiled: October 14, 2020Date of Patent: May 16, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Wei Huang, Chao-Ching Chang, Yun-Wei Cheng, Chih-Lung Cheng, Yen-Chang Chen, Wen-Jen Tsai, Cheng Han Lin, Yu-Hsun Chih, Sheng-Chan Li, Sheng-Chau Chen
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Publication number: 20220310544Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.Type: ApplicationFiled: June 15, 2022Publication date: September 29, 2022Inventors: Hsin-Chi CHEN, Hsun-Ying HUANG, Chih-Ming LEE, Shang-Yen WU, Chih-An YANG, Hung-Wei HO, Chao-Ching CHANG, Tsung-Wei HUANG
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Publication number: 20220278242Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: ApplicationFiled: May 13, 2022Publication date: September 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU
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Patent number: 11373971Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.Type: GrantFiled: June 30, 2020Date of Patent: June 28, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Chi Chen, Hsun-Ying Huang, Chih-Ming Lee, Shang-Yen Wu, Chih-An Yang, Hung-Wei Ho, Chao-Ching Chang, Tsung-Wei Huang
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Patent number: 11335817Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: GrantFiled: April 9, 2020Date of Patent: May 17, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han Lin, Chao-Ching Chang, Yi-Ming Lin, Yen-Ting Chou, Yen-Chang Chen, Sheng-Chan Li, Cheng-Hsien Chou
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Publication number: 20220115421Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: ApplicationFiled: October 14, 2020Publication date: April 14, 2022Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN
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Publication number: 20210407947Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Chi CHEN, Hsun-Ying HUANG, Chih-Ming LEE, Shang-Yen WU, Chih-An YANG, Hung-Wei HO, Chao-Ching CHANG, Tsung-Wei HUANG
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Patent number: 11189654Abstract: A plurality of radiation-sensing doped regions are formed in a substrate. A trench is formed in the substrate between the radiation-sensing doped regions. A SiOCN layer is filled in the trench by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N2O, N2 and O2 through a plasma enhanced atomic layer deposition (PEALD) method, to form an isolation structure between the radiation-sensing doped regions.Type: GrantFiled: June 14, 2020Date of Patent: November 30, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Ching Chang, Sheng-Chan Li, Chih-Hui Huang, Jian-Shin Tsai, Cheng-Yi Wu, Chia-Hsing Chou, Yi-Ming Lin, Min-Hui Lin, Chin-Szu Lee
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Publication number: 20210050460Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: ApplicationFiled: April 9, 2020Publication date: February 18, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU
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Publication number: 20200312894Abstract: A plurality of radiation-sensing doped regions are formed in a substrate. A trench is formed in the substrate between the radiation-sensing doped regions. A SiOCN layer is filled in the trench by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N2O, N2 and O2 through a plasma enhanced atomic layer deposition (PEALD) method, to form an isolation structure between the radiation-sensing doped regions.Type: ApplicationFiled: June 14, 2020Publication date: October 1, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chao-Ching Chang, Sheng-Chan Li, Chih-Hui Huang, Jian-Shin Tsai, Cheng-Yi Wu, Chia-Hsing Chou, Yi-Ming Lin, Min-Hui Lin, Chin-Szu Lee
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Publication number: 20200115823Abstract: A method for preparing hydrophobic fibers by electrospinning of polymer is provided, which may include the following steps: providing a polymer material including poly(methyl methacrylate); providing a solvent including 2-propanol and water; adding the polymer material into the solvent to form a mixed solution; heating and stirring the mixed solution; electrospinning the mixed solution to generate polymer fibers.Type: ApplicationFiled: August 5, 2019Publication date: April 16, 2020Inventors: CHAO-CHING CHANG, HUI-YI CHANG, LIAO-PING CHENG