Patents by Inventor Chao-Chun Wang

Chao-Chun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11658064
    Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a metal cap layer over an upper surface of the first conductive feature distal from the substrate; selectively forming a dielectric cap layer over an upper surface of the first dielectric layer and laterally adjacent to the metal cap layer, wherein the metal cap layer is exposed by the dielectric cap layer; and forming an etch stop layer stack over the metal cap layer and the dielectric cap layer, wherein the etch stop layer stack comprises a plurality of etch stop layers.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Chun Wang, Jen Hung Wang
  • Patent number: 11611992
    Abstract: A first station (STA) and a second STA perform bandwidth negotiation with a bandwidth extension indication. Then the first STA and the second STA communicate wirelessly according to the bandwidth negotiation.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: March 21, 2023
    Assignee: MediaTek Singapore Pte. Ltd.
    Inventors: Kai Ying Lu, Yongho Seok, James Chih-Shi Yee, Chao-Chun Wang, Jianhan Liu
  • Publication number: 20230040899
    Abstract: Embodiments of the present invention provide a punctured preamble enabling wireless devices to efficiently use a channel (e.g., an 80 or 160 MHz channel) where a primary service is operating. A Wideband Channel Access Mechanism for 20 MHz/80 MHz operating STAs is provided so that a 20 MHz/80 MHz operating STA can dynamically move to a secondary channel to improve wireless performance of the STA. An AP coordinates the operating channel switch of the 20 MHz/80 MHz operating STA. An EHT cooperative multi-band operation can be applied to the preamble punctured PPDU for simultaneous multi-band operation.
    Type: Application
    Filed: October 19, 2022
    Publication date: February 9, 2023
    Inventors: Yongho SEOK, Jianhan LIU, Chao-Chun WANG, James Chih-Shi YEE
  • Publication number: 20230043239
    Abstract: An apparatus (e.g., an access point (AP) establishes a plurality of links comprising a primary link and at least a secondary link. The apparatus transmits a management frame on the primary link to indicate a multi-link capability of the AP. The apparatus configures the secondary link for one or more non-AP stations (STAs), which are capable of operating on the primary link and the secondary link, with multi-link capability and operating parameters through an association procedure on the primary link.
    Type: Application
    Filed: October 24, 2022
    Publication date: February 9, 2023
    Inventors: Kaiying Lu, Yongho Seok, James Chih-Shi Yee, Chao-Chun Wang, Jianhan Liu, Thomas Edward Pare, JR.
  • Patent number: 11533756
    Abstract: A data unit (e.g., a physical layer convergence procedure (PLCP) protocol data unit (PPDU)) is detected at a first wireless device of a basic service set (BSS). The data unit was sent on a channel from a second wireless device of an overlapping basic service set (OBSS). The data unit is wide-bandwidth, occupying both a primary channel and a secondary channel of the wireless network. The first and second wireless devices are within a same spatial reuse group (SRG). The first wireless device stores the channel bandwidth of the data unit and a receive duration time of the data unit. During the receive duration time of the data unit, a SRG OBSS power density threshold is applied on the secondary channels that are within the channel bandwidth of the data unit, instead of applying a non-SRG OBSS power density threshold on those secondary channels.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: December 20, 2022
    Assignee: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Yongho Seok, James June-Ming Wang, Chao-Chun Wang, Chih-Shi Yee
  • Patent number: 11516841
    Abstract: An apparatus (e.g., an access point (AP) establishes a plurality of links comprising a primary link and at least a secondary link. The apparatus transmits a management frame on the primary link to indicate a multi-link capability of the AP. The apparatus configures the secondary link for one or more non-AP stations (STAs), which are capable of operating on the primary link and the secondary link, with multi-link capability and operating parameters through an association procedure on the primary link.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: November 29, 2022
    Assignee: MediaTek Singapore Pte. Ltd.
    Inventors: Kaiying Lu, Yongho Seok, James Chih-Shi Yee, Chao-Chun Wang, Jianhan Liu, Thomas Edward Pare, Jr.
  • Patent number: 11510181
    Abstract: Embodiments of the present invention provide a punctured preamble enabling wireless devices to efficiently use a channel (e.g., an 80 or 160 MHz channel) where a primary service is operating. A Wideband Channel Access Mechanism for 20 MHz/80 MHz operating STAs is provided so that a 20 MHz/80 MHz operating STA can dynamically move to a secondary channel to improve wireless performance of the STA. An AP coordinates the operating channel switch of the 20 MHz/80 MHz operating STA. An EHT cooperative multi-band operation can be applied to the preamble punctured PPDU for simultaneous multi-band operation.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: November 22, 2022
    Assignee: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Yongho Seok, Jianhan Liu, Chao-Chun Wang, James Chi-Shi Yee
  • Publication number: 20220367355
    Abstract: An integrated circuit structure includes a first low-k dielectric layer having a first k value, and a second low-k dielectric layer having a second k value lower than the first k value. The second low-k dielectric layer is overlying the first low-k dielectric layer. A dual damascene structure includes a via with a portion in the first low-k dielectric layer, and a metal line over and joined to the via. The metal line includes a portion in the second low-k dielectric layer.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Chao-Chun Wang, Chung-Chi Ko, Po-Cheng Shih
  • Patent number: 11503638
    Abstract: A data unit (e.g., a physical layer convergence procedure (PLCP) protocol data unit (PPDU)) is detected at a first wireless device of a basic service set (BSS). The data unit was sent on a channel from a second wireless device of an overlapping basic service set (OBSS). The data unit is wide-bandwidth, occupying both a primary channel and a secondary channel of the wireless network. The first and second wireless devices are within a same spatial reuse group (SRG). The first wireless device stores the channel bandwidth of the data unit and a receive duration time of the data unit. During the receive duration time of the data unit, a SRG OBSS power density threshold is applied on the secondary channels that are within the channel bandwidth of the data unit, instead of applying a non-SRG OBSS power density threshold on those secondary channels.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: November 15, 2022
    Assignee: MEDIATEK SINGAPORE PTE LTD.
    Inventors: Yongho Seok, James June-Ming Wang, Chao-Chun Wang, Chih-Shi Yee
  • Patent number: 11490251
    Abstract: Methods and apparatus for performing secure ranging measurements between wireless devices are disclosed herein according to embodiments of the present invention. The described embodiments use key values to indicate which LTF sequence (e.g., LTF measurement exchange) to use for performing wireless ranging measurements. A LTF sequence that is received by a wireless device that does not correspond with the associated key value is determined to be invalid. Invalid LTF sequences may be disregarded as signal noise.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: November 1, 2022
    Assignee: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Yongho Seok, Chao-Chun Wang, Chih-Shi Yee
  • Patent number: 11482493
    Abstract: An integrated circuit structure includes a first low-k dielectric layer having a first k value, and a second low-k dielectric layer having a second k value lower than the first k value. The second low-k dielectric layer is overlying the first low-k dielectric layer. A dual damascene structure includes a via with a portion in the first low-k dielectric layer, and a metal line over and joined to the via. The metal line includes a portion in the second low-k dielectric layer.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: October 25, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
    Inventors: Chao-Chun Wang, Chung-Chi Ko, Po-Cheng Shih
  • Patent number: 11463203
    Abstract: Embodiments described herein provide apparatus and methods for performing HARQ operations using parallel HARQ threads, where each new transmission of a MPDU/A-MPDU/PSDU triggers the activation of a HARQ thread. Each HARQ thread contains one or more HARQ coding words or coding units. A HARQ thread index is setup by a transmission opportunity (TXOP) holder for a corresponding PSDU and is used to identify HARQ threads. Multiple HARQ threads can be aggregated into one PPDU for transmission (or retransmission). The maximum number of HARQ threads can be negotiated between AP and non-AP STAs based on buffer requirements, for example. A HARQ thread can end when all MPDUs associated with the HARQ thread have been decoded or other predetermined conditions are met.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: October 4, 2022
    Assignee: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Kaiying Lu, Jianhan Liu, Chao-Chun Wang, James Chih-Shi Yee, Yongho Seok
  • Patent number: 11463201
    Abstract: Embodiments described herein provide apparatus and methods for performing HARQ operations using parallel HARQ threads, where each new transmission of a Media Access Control (MAC) Protocol Data Unit (MPDU)/Aggregate-MPDU (A-MPDU)/Physical Layer Convergence Procedure (PLCP) Service Data Unit (PSDU) triggers the activation of a HARQ thread. Each HARQ thread contains one or more HARQ coding words or coding units. A HARQ thread index is setup by a transmission opportunity (TXOP) holder for a corresponding PSDU and is used to identify HARQ threads. Transmission information such as duration in formation for PPDUs including BA/HARQ-ACK feedback such as RX/TX addresses, etc. can be determined according to previous transmission values of a received PPDU (e.g., values of a MAC or PHY header).
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: October 4, 2022
    Assignee: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Kaiying Lu, Jianhan Liu, James Chih-Shi Yee, Chao-Chun Wang, Thomas Edward Pare, Jr.
  • Publication number: 20220294583
    Abstract: Embodiments of the present invention provide an improved switching mechanism for multi-link devices that can perform frame exchanges using multiple spatial streams and automatically switch back to a listening mode on enabled links deterministically for improved throughput and reduced latency. Embodiments of the present invention are suitable for multi-link operations performed using a multi-radio device or a single-radio device.
    Type: Application
    Filed: March 8, 2022
    Publication date: September 15, 2022
    Inventors: Kai Ying Lu, James Chih-Shi Yee, Yongho Seok, Chao-Chun Wang
  • Patent number: 11432326
    Abstract: An apparatus capable of multi-link operations with respect to a first link and a second link obtains a second transmission opportunity (TXOP) on the second link after one other apparatus has started a first TXOP on the first link. The apparatus performs one or more transmissions during the second TXOP on the second link such that the second TXOP is at least partially synchronized with the first TXOP on the first link.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: August 30, 2022
    Assignee: MediaTek Singapore Pte. Ltd.
    Inventors: Kaiying Lu, James Chih-Shi Yee, Yongho Seok, Chao-Chun Wang, Thomas Edward Pare, Jr.
  • Publication number: 20220217631
    Abstract: Embodiments of the present invention provide a method and apparatus for providing wideband channel access to wireless devices, such as 20 MHz only wireless stations. A trigger frame is transmitted by a wireless AP to a wireless STA over a secondary wireless channel. An HE TB PPDU is received by the wireless AP from the wireless STA over the secondary wireless channel responsive to the trigger frame. The devices can switch operating channels for wireless communication to the secondary wireless channel within an existing TXOP.
    Type: Application
    Filed: March 22, 2022
    Publication date: July 7, 2022
    Inventors: Yongho SEOK, Chao-Chun WANG, James Chih-Shi YEE
  • Publication number: 20220150796
    Abstract: An access point (AP) includes a transmitter (TX) circuit, a receiver (RX) circuit, and a control circuit. The control circuit negotiates with at least one another AP via the TX circuit and the RX circuit, for setting up a coordinated service period (SP). In addition, a method for setting up the coordinated SP in a multiple AP environment includes: sending a request frame from a first AP to at least one second AP, wherein the request frame includes a plurality of SP parameters; receiving a response frame generated from the at least one second AP in response to the request frame; and in response to the response frame, setting up the coordinated SP by sending a setup frame to the at least one another AP, wherein the setup frame is set by updating at least a portion of the plurality of SP parameters.
    Type: Application
    Filed: November 10, 2021
    Publication date: May 12, 2022
    Applicant: MEDIATEK INC.
    Inventors: Chien-Fang Hsu, Chao-Chun Wang, James Chih-Shi Yee
  • Patent number: 11310736
    Abstract: Embodiments of the present invention provide a method and apparatus for providing wideband channel access to wireless devices, such as 20 MHz only wireless stations. A Target Wakeup Time (TWT) Channel field contains a bitmap indicating a temporary primary channel for using during a TWT Service Period (SP). The temporary primary channel is determined through a negotiation between a requesting STA and a responding STA, and the responding STA assigns resource units (RUs) to the requesting STA according to the temporary primary channel. After the TWT SP, the requesting STA switches back to a primary channel.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: April 19, 2022
    Assignee: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Yongho Seok, Chao-Chun Wang, James Chih-Shi Yee
  • Publication number: 20220102203
    Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a metal cap layer over an upper surface of the first conductive feature distal from the substrate; selectively forming a dielectric cap layer over an upper surface of the first dielectric layer and laterally adjacent to the metal cap layer, wherein the metal cap layer is exposed by the dielectric cap layer; and forming an etch stop layer stack over the metal cap layer and the dielectric cap layer, wherein the etch stop layer stack comprises a plurality of etch stop layers.
    Type: Application
    Filed: March 23, 2021
    Publication date: March 31, 2022
    Inventors: Chao-Chun Wang, Jen Hung Wang
  • Patent number: 11264328
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a first capping layer on a dielectric structure over a substrate, and patterning the dielectric structure and the first capping layer to define cavities within the dielectric structure. A conductive material is formed within the cavities and a second capping layer is formed on the conductive material. An etch stop layer is formed along sidewalls and over an upper surface of the second capping layer. The etch stop layer has a first thickness over the first capping layer and a second thickness over the second capping layer. The first thickness is greater than the second thickness.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: March 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chao-Chun Wang, Su-Jen Sung