Abstract: A self-compensating gate driving circuit includes cascade-connected GOA units of which a Nth GOA unit includes a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part. The pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding circuit are respectively coupled to a Nth gate signal point Q(N) and a Nth horizontal scanning line G(n). The pull-up controlling part and the transmission part are each coupled to the Nth gate signal point Q(N). The pull-down holding part is inputted with a first DC low voltage VSS1 and a second DC low voltage VSS2. The pull-down holding part includes a first pull-down holding part and a second pull-down holding part to alternately work.

Abstract: The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed of the circuit comprises a first pull-down holding module (601) and a second pull-down holding module (602) which is capable of extending the lifetime of the circuit; the first pull-down holding module (601) comprises a first main inverter and a first auxiliary inverter with introducing a constant low voltage level (DCL); the second pull-down holding module (602) comprises a second main inverter and a second auxiliary inverter with introducing a constant low voltage level (DCL); setting the constant low voltage level (DCL)<the second negative voltage level (VSS2)<the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part (600) can b

Abstract: The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed in the scan driving circuit for the oxide semiconductor thin film transistors comprises a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL)<the second negative voltage level (VSS2)<the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part (600) can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at low voltage level.

Abstract: The present invention provides a scan-driving circuit used to perform a driving operation on cascaded scanning lines, which comprises a pull-up control module, a pull-up module, a pull-down module, a pull-down sustain module, a down-transmitting module and a bootstrap capacitor. The scan-driving circuit of the present invention enhances the voltage-level control capability of the Q point and raises the reliability of the scan-driving circuit, by disposing a first constant-high voltage and a second constant-high voltage.

Abstract: A scan driving circuit and a liquid crystal display device include a pull-up assembly, a pull-up control assembly that drives the pull-up assembly, a pull-down maintaining assembly, a reference low-level signal, and a down-transmitting assembly. A control end of the down-transmitting assembly is coupled to an output end of the pull-up control assembly and a control end of the pull-up assembly, and a current down-transmitting signal is output from an output end of the down-transmitting assembly.

Abstract: The present invention provides a self-compensating gate driving circuit, comprising: a plurality of GOA units which are cascade connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part; the pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding circuit are respectively coupled to a Nth gate signal point Q(N) and the Nth horizontal scanning line G(n), and the pull-up controlling part and the transmission part are respectively coupled to the Nth gate signal point Q(N), and the pull-down holding part is inputted with a DC low voltage VSS; the pull-down holding part comprises a first pull-down holding part and a second pull-down holding part to alternately work.

Abstract: The present invention provides a self-compensating gate driving circuit, comprising: a plurality of GOA units which are cascade connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part; the pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding circuit are respectively coupled to a Nth gate signal point Q(N) and the Nth horizontal scanning line G(n), and the pull-up controlling part and the transmission part are respectively coupled to the Nth gate signal point Q(N), and the pull-down holding part is inputted with a DC low voltage VSS; the pull-down holding part comprises a first pull-down holding part and a second pull-down holding part to alternately work.

Abstract: The invention provides a scan driving circuit for an oxide semiconductor thin film transistor. The scan driving circuit for an oxide semiconductor thin film transistor includes multiple cascade connected GOA units and a shared auxiliary inverter. Each of the GOA units includes a main inverter. The auxiliary inverter is electrically connected to each main inverter to form corresponding pull-down holding parts for the respective GOA units, which can achieve the sharing of the pull-down holding parts of the multiple stages GOA units, the number of TFT elements can be reduced and therefore GOA layout space as well as circuit power consumption can be reduced.

Abstract: A secondary encapsulation waterproof structure for hydroelectric power generator comprises: a magnet, sleeved on and around a rotation axis of a generator; a coil, disposed around the magnet; and a magnet encapsulation component, sleeved around the magnet. The magnet encapsulation component includes a column-shaped plastic sleeve, a column-shaped rubber sleeve, or a column-shaped ceramic sleeve, sleeved around the magnet. The secondary encapsulation waterproof structure for a hydroelectric power generator is simple in construction, and it utilizes the secondary encapsulation waterproof structure to overcome the insufficient waterproof capability of the prior art for a hydroelectric power generator obtained through barrel plating, to raise its waterproof and corrosion resistance capability, in achieving prolonged service life for the hydroelectric power generator.

Abstract: A gate driver on array circuit and a liquid crystal display device are disclosed. The Nth-level GOA unit comprises: a pull-down unit; the pull-down unit comprises a first thin film transistor (TFT) which is connected to the input end of the (n+2)th-level high-frequency clock signal and a pull-down control unit respectively; the first TFT, a pull-up unit and a pull-up control unit are commonly connected to the pull-down point so as to pull-down the electrical potential of the pull-down point, wherein N is a positive integer greater than 3; n is positive integer.

Abstract: The present invention provides a GOA circuit based on oxide semiconductor thin film transistor, which cannot only prevent the electrical leakage to raise the reliability of the GOA circuit but also avoid the generation of the crossfire current in the non-function period by shorting the gate and the source of the fortieth thin film transistor (T40) in the first pull-down module (400) for avoiding the influence of the constant high voltage level (DCH) to the pull-down holding of the first node by electrically coupling both the gate and the drain of the seventy-fifth thin film transistor (T75) in the pull-down holding module (600) to the first node (Q(N)), and clearing the interference of the residual charge to the GOA circuit by providing the reset module (700) to reset the first node (Q(N)) before generating the each frame to guarantee the normal output of the GOA circuit and the normal display of the image.

Abstract: The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed in the scan driving circuit for the oxide semiconductor thin film transistors comprises a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL)<the second negative voltage level (VSS2)<the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part (600) can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at low voltage level.

Abstract: A poking-rod type multi-function shower arm comprises: a shower arm main body, including: a water output end, at least two water output ends, disposed around an outer wall of a water output chamber in the shower arm main body, and formed with an angle to each other, while connected and communicating with the water output chamber; a tight seal plug, disposed in the water output chamber, and used to block respective water output ends; a swing rod, sleeved in a center of the tight seal plug, and extended outside the water output chamber, to drive the tight seal plug to move, so as to close the water output end, to prevent it from outputting water.

Abstract: A push-button type multi-function shower arm includes a shower arm main body, provided with a water input end, a shower water output end, and a shower head water output end; a water output chamber, disposed in the shower arm main body, with perimeter of its outer wall disposed with the shower water output end and the shower head water output end in communication with the water output chamber; a shunt valve, disposed in the water output chamber, movable upward and downward, while in a center of the shunt valve is provided with slot channel, to enable communication between the water input end and the shower water output end; and a press device, disposed at top of the shunt valve, to drive the shunt valve to move along axial direction of the water output chamber.

Abstract: The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed of the circuit comprises a first pull-down holding module (601) and a second pull-down holding module (602) which is capable of extending the lifetime of the circuit; the first pull-down holding module (601) comprises a first main inverter and a first auxiliary inverter with introducing a constant low voltage level (DCL); the second pull-down holding module (602) comprises a second main inverter and a second auxiliary inverter with introducing a constant low voltage level (DCL); setting the constant low voltage level (DCL)<the second negative voltage level (VSS2)<the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part (600) can b

Abstract: The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed in the scan driving circuit for the oxide semiconductor thin film transistors comprises a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL)<the second negative voltage level (VSS2)<the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part (600) can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at low voltage level.

Abstract: A side-knob type multi-function shower arm and a method of implementing the same. The method comprises two water output modes: (1) a shower head water output mode: when handle of a function switching knob is rotated to point vertically downward, a three-way splitter is brought to connect the water input channel of main body to a shower head water output channel, so that water flows to the shower head water output channel, and then flows directly out from a shower head; and (2) a shower water output mode: when the handle of the function switching knob is then rotated 90 degrees counterclockwise, the three-way splitter is brought to connect the water input channel of the main body to a shower water output channel, so that water flows to the shower water output channel, and then flows out a shower from an outside connected shower hose.

Abstract: A position restoring and water splitting shower arm and a method of implementing the same. The shower arm comprises: a tube body and a switch valve. The tube body is provided with a water input port and a first water output port, while a second water output port is disposed on a middle section of the tube body. The switch valve is disposed vertically in the tube body, to switch connection and communication between the water input port and a first water output port, or between the water input port and the second water output port. The switch valve includes a valve seat; and a gravitation valve core disposed in the valve seat, with its one end provided with a valve core head, used to block the second water output port or the valve seat upper port.

Abstract: The disclosure is related to a scan driving circuit for an oxide semiconductor thin film transistor and the NOR gate logic operation circuit thereof. The NOR gate logic operation circuit includes a first invertor and a second invertor applied in the pull down holding circuit of the GOA circuit, and a plurality of transistors. The combination of the NTFT and the invertor displaces the original function of the PMOS element to realize a characteristic similar to an original COMS NOR operation circuit, thereby solving a design problem of the logic operation circuit using a IGZO TFT single element, such that a larger scale digital integrated circuit is further suitably integrated into the liquid crystal display.

Abstract: A front-knob type multi-function shower arm and method of implementing the same. The method includes the following two water output modes: (1) a shower head water output mode: when rotating upward a knob on a front face, a three-way splitter is brought to connect a water input channel of a main body to a shower head water output channel, so that water flows to the shower head water output channel, and then it flows directly out from a shower head; and (2) a shower water output mode: when rotating downward a knob on a front face, the three-way splitter is brought to connect the water input channel of the main body to the shower water output channel, so that water flows to the shower water output channel, and then it flows out a shower from an outside connected shower hose.