Abstract: A method for analyzing a technology document is adapted to a technology document and includes providing a technology structure network. The technology structure network has several technology category groups representing several technology categories correspondingly. Each technology category group is a technology hierarchical class having several technology levels from top to bottom and each technology level has at least one technology node. Then, statistics for terms are calculated to analyze a content of the technology document so as to find out at lest one particular term. Next, a co-occurrence correlation is established between each of the particular terms and each of the technology nodes in the technology structure network. Then, according to the correlations, a technical field of the technology document is identified.

Abstract: A method for searching data from a database is provided. The method comprises steps of determining a data set from the database according to a searching target. The data set includes several documents related to the searching target. Then, a content of each of the documents is analyzed to generate a queue of term frequency. Thereafter, according to the queue of the term frequency, a low frequency keyword candidate list is generated. Furthermore, according to the low frequency keyword candidate list and the queue of the term frequency, an effective keyword list is generated. Then, according to the effective keyword list, a document searching result is determined and the document searching result lists several documents in relation to the searching target in the database.

Abstract: A die bonder and a die bonding method thereof are provided. The die bonder includes a wafer platform, an arranging platform, a conveyer, at least one first pick-up device and a second pick-up device. The wafer platform is for placing a wafer with several dies. The conveyer is for carrying and conveying a substrate. The first pick-up device is for picking up one of the dies and placing each die on the arranging platform. The second pick-up device is for picking up the dies on the arranging platform and placing the dies on the substrate at the same time.

Abstract: A packaging substrate and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, a first packaging substrate including several first substrate units and at least one defected substrate unit is provided. Next, the defected substrate unit is separated from the packaging substrate, and at least one opening is formed in a frame of the first packaging substrate correspondingly. Then, a second substrate unit is provided. The shape of the second substrate unit is different from the shape of the opening. Afterwards, the second substrate unit is disposed in the opening.

Abstract: A packaging substrate and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, a first packaging substrate including several first substrate units and at least one defected substrate unit is provided. Next, the defected substrate unit is separated from the packaging substrate, and at least one opening is formed in a frame of the first packaging substrate correspondingly. Then, a second substrate unit is provided. The shape of the second substrate unit is different from the shape of the opening. Afterwards, the second substrate unit is disposed in the opening.

Abstract: A wire-bonding method for a wire-bonding apparatus is provided. The wire-bonding apparatus includes at least a first wire-bonder and a second wire-bonder for respectively bonding at least several first chips in a first region and several second chips in a second region on a substrate simultaneously. The wire-bonding method includes following steps. First, initial position coordinates of the first region and the second region are obtained. Next, it is determined whether a space between the first region and the second region is greater than a predetermined space. When the space between the first region and the second region is greater than the predetermined space, the first wire-bonder and the second wire-bonder respectively bond the first chips and the second chips simultaneously.

Abstract: A die bonder and a die bonding method thereof are provided. The die bonder includes a wafer platform, an arranging platform, a conveyer, at least one first pick-up device and a second pick-up device. The wafer platform is for placing a wafer with several dies. The conveyer is for carrying and conveying a substrate. The first pick-up device is for picking up one of the dies and placing each die on the arranging platform. The second pick-up device is for picking up the dies on the arranging platform and placing the dies on the substrate at the same time.

Abstract: A packaging substrate and a method of manufacturing the same are provided. The method includes following steps. First, a first substrate including at least one defected packaging unit and several first packaging units is provided. The defected packaging unit and the first packaging units are arranged in an array on the first substrate. Next, the defected packaging unit is removed from the first substrate to correspondingly form at least one opening in the first substrate. Then, a second substrate including at least one second packaging unit is provided. Later, the second packaging unit is separated from the second substrate. The area of the second packaging unit is less than that of the opening. Subsequently, the second packaging unit is disposed in the opening. The edge of the second packaging unit is placed partially against an inner wall of the opening.

Abstract: A wire-bonding apparatus is used for wire-bonding at least a first chip and a second chip on a substrate at the same time. The wire-bonding apparatus includes at least a first capillary, a second capillary, a driving unit, a processing unit and a database. The driving unit is used for driving the first capillary and the second capillary. The processing unit is used for outputting a command to the driving unit to control the first capillary and the second capillary. The database is used for storing an operating parameter data. The processing unit controls the first capillary and the second capillary according to the operating parameter data.

Abstract: A chip structure comprising a chip, a redistribution layer, a second passivation layer and at least a bump is provided. The chip has a first passivation layer and at least a bonding pad. The first passivation layer exposes the bonding pad and has at least a recess. The redistribution layer is formed over the first passivation layer and electrically connected to the bonding pad. Furthermore, the redistribution layer also extends from the bonding pad to the recess. The second passivation layer is formed over the first passivation layer and the redistribution layer. The second passivation layer also has an opening that exposes the redistribution layer above the recess. The bump passes through the opening and connects electrically with the redistribution layer above the recess.

Abstract: A method of forming a plurality of bumps over a wafer mainly comprises providing the wafer having a plurality of bonding pads formed thereon, forming an under bump metallurgy (UBM) layer over the bonding pads wherein the UBM layer includes an adhesive layer, for example a titanium (Ti) layer or an aluminum (Al) layer, and at least one electrically conductive layer formed on the adhesive layer, removing the portions of the electrically conductive layer located outside the bonding pads, forming a plurality of bumps over the residual portions of the electrically conductive layer disposed above the bonding pads, etching the adhesive layer located outside the bumps, and then reflowing the bumps.

Abstract: A chip structure comprising a chip, a redistribution layer, a second passivation layer and at least a bump is provided. The chip has a first passivation layer and at least a bonding pad. The first passivation layer exposes the bonding pad and has at least a recess. The redistribution layer is formed over the first passivation layer and electrically connected to the bonding pad. Furthermore, the redistribution layer also extends from the bonding pad to the recess. The second passivation layer is formed over the first passivation layer and the redistribution layer. The second passivation layer also has an opening that exposes the redistribution layer above the recess. The bump passes through the opening and connects electrically with the redistribution layer above the recess.

Abstract: A scent diffuser used with a low-temperature dehydrated plant powder includes: a scent diffuser body having a base and a lid; a heating basin being made by a thermal conductive material and having a three-dimensional heating groove disposed on the surface at the top of the heating basin and a heating device installed at the bottom of the heating basin; a temperature and time controller electrically connected to a circuit of the heating device for controlling and adjusting the action and temperature of the heating device, and the heating groove is provided for placing a powder of a natural herbaceous or woody plant by a low-temperature dehydration process, and the powder is heated by the heating device, such that the heating basin continues heating the powder contained therein to release the aroma of the natural herbaceous or woody plant.

Abstract: A bumping process mainly comprises the steps of providing a wafer having a plurality of bonding pads, forming a patterned adhesive layer over the bonding pads, forming a barrier layer and a wetting layer on the patterned adhesive layer and the surface of the wafer, removing the barrier layer and the wetting layer not covering the patterned adhesive layer, forming a plurality of bumps on the patterned wetting layer and reflowing the bumps.

Abstract: A wafer-level package structure, applicable to a flip-chip arrangement on a carrier, which comprises a plurality of contact points, is described. This wafer-level package structure is mainly formed with a chip and a conductive layer. The conductive layer is arranged on the bonding pads of the chip as contact points. The conductive layer can further be arranged at a region outside the bonding pads on the chip as a heat sink to enhance the heat dissipation ability of the package.

Abstract: A method for making UBM (Under Bump Metallurgy) pads and bumps on a wafer is disclosed. Openings are formed in a photoresist layer for forming bumps, a positive liquid photoresist is provided into the openings of the photoresist layer for forming bumps. The positive liquid photoresist is exposed and developed to modify the openings of the photoresist layer. Thus, bumps formed in the modified openings have precise bonding areas on the UBM layer. Using the bumps as a mask, UBM pads under the bumps are formed by etching the UBM layer, so that the reflowed bumps have a uniform height.

Abstract: A formation method and structure of conductive bump are provided. A conductive bump is formed on a wafer through an under bump metallurgy layer. A nickel-based wetting layer in the under bump metallurgy layer is applied on the conductive bump to prevent stannum in the conductive bump from diffusing downwards.

Abstract: A method of forming bumps on the active surface of a silicon wafer. A first under-bump metallic layer is formed over the active surface of the wafer. A second under-bump metallic layer is formed over the first under-bump metallic layer. A portion of the second under-bump metallic layer is removed to expose the first under-bump metallic layer. A plurality of solder bumps is implanted onto the second under-bump metallic layer. The exposed first under-bump metallic layer is removed so that only the first under-bump metallic layer underneath the second under-bump metallic layer remains.

Abstract: A bump fabrication process for forming a bump over a wafer having a plurality of bonding pads thereon is provided. A patterned solder mask layer having a plurality of openings that exposes the respective bonding pads is formed over a wafer. The area of the opening in a the cross-sectional area through a the bottom-section as well as through a the top-section of the opening is smaller than the area of the opening in a the cross-sectional area through a the mid-section of the opening. Solder material is deposited into the opening and then a reflow process is conducted fusing the solder material together to form a spherical bump inside the opening. Finally, the solder mask layer is removed. In addition, a pre-formed bump may form on the bonding pad of the wafer prior to forming the patterned solder mask layer over the wafer having at least with an opening that exposes the pre-formed bump.

Abstract: A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device comprises a dielectric layer, disposed substantially above the burnt fuse pad and filling the gap, and a bump structure, disposed on the bump pad. The foregoing semiconductor device can further comprise a passivation layer, which exposes the bump pad and a portion of the burnt fuse pad. Wherein, the dielectric layer is over the passivation layer, covers the exposed portion of the burnt fuse pad and fills the gap.