Abstract: A chip holder formed of silicon, glass, other ceramics or other suitable materials includes a plurality of recesses for retaining semiconductor chips. The bond pads of the semiconductor chip are formed on or over an area of the chip holder that surrounds the semiconductor chip thus expanding the bonding area. The bond pads are coupled, using semiconductor wafer processing techniques, to internal bond pads formed directly on the semiconductor chip.

Abstract: A seal ring structure between an integrated circuit region and a scribe line is provided. In one embodiment, the seal ring structure comprises a substrate; a plurality of layers of metal lines formed overlying the substrate; a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines; a first passivation layer formed over the plurality of layers of metal lines, the first passivation layer having an opening therein exposing a portion of a top metal line; residual metal pad layers formed proximal the opening of the first passivation layer; and a second passivation layer formed over the first passivation layer, the second passivation layer enveloping the exposed residual metal pad or metal redistribution layers and further having a trench above the top metal line.

Abstract: A chip holder formed of silicon, glass, other ceramics or other suitable materials includes a plurality of recesses for retaining semiconductor chips. The bond pads of the semiconductor chip are formed on or over an area of the chip holder that surrounds the semiconductor chip thus expanding the bonding area. The bond pads are coupled, using semiconductor wafer processing techniques, to internal bond pads formed directly on the semiconductor chip.

Abstract: A semiconductor structure having an efficient thermal path and a method for forming the same are provided. The semiconductor structure includes a protection ring over a semiconductor substrate and substantially encloses a laser fuse structure. The laser fuse structure includes a laser fuse and a connection structure connecting the fuse to integrated circuits. The protection ring is thermally coupled to the semiconductor substrate by contacts. The semiconductor structure further includes a metal plate conducting heat generated by a laser beam to the protection ring.

Abstract: A seal ring structure between an integrated circuit region and a scribe line is provided. In one embodiment, the seal ring structure comprises a substrate; a plurality of layers of metal lines formed overlying the substrate; a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines; a first passivation layer formed over the plurality of layers of metal lines, the first passivation layer having an opening therein exposing a portion of a top metal line; residual metal pad layers formed proximal the opening of the first passivation layer; and a second passivation layer formed over the first passivation layer, the second passivation layer enveloping the exposed residual metal pad or metal redistribution layers and further having a trench above the top metal line.

Abstract: A semiconductor structure having an efficient thermal path and a method for forming the same are provided. The semiconductor structure includes a protection ring over a semiconductor substrate and substantially encloses a laser fuse structure. The laser fuse structure includes a laser fuse and a connection structure connecting the fuse to integrated circuits. The protection ring is thermally coupled to the semiconductor substrate by contacts. The semiconductor structure further includes a metal plate conducting heat generated by a laser beam to the protection ring.

Abstract: A method to protect a low-K IMD layer underlying a fuse link during a fuse blowing process including a guarded fuse and method for forming the same including forming a fuse portion comprising two metal fuse interconnect structures and a guard ring comprising a metal interconnect structure surrounding the fuse portion in an uppermost IMD layer comprising a dielectric constant of less than about 3.2; forming a protective metal portion electrically isolated in the uppermost IMD layer to cover at least a portion of an area extending between the fuse portions; forming at least one overlying dielectric insulating layer over the uppermost layer to include extended portions of the fuse portion and the guard ring; and, forming a metal fuse link portion to electrically interconnect the fuse portion wherein the fuse portion overlies at least a portion of the protective metal portion.

Abstract: A method to protect a low-K IMD layer underlying a fuse link during a fuse blowing process including a guarded fuse and method for forming the same including forming a fuse portion comprising two metal fuse interconnect structures and a guard ring comprising a metal interconnect structure surrounding the fuse portion in an uppermost IMD layer comprising a dielectric constant of less than about 3.2; forming a protective metal portion electrically isolated in the uppermost IMD layer to cover at least a portion of an area extending between the fuse portions; forming at least one overlying dielectric insulating layer over the uppermost layer to include extended portions of the fuse portion and the guard ring; and, forming a metal fuse link portion to electrically interconnect the fuse portion wherein the fuse portion overlies at least a portion of the protective metal portion.

Abstract: A semiconductor device comprising a damascene structure comprising copper and a fuse comprising aluminum connected to the damascene structure.

Abstract: A fuse structure for a semiconductor device on a substrate includes a fuse having an electrically conductive fuse line of a standard fuse length formed in an electrically conductive layer disposed over the substrate, and a pair of electrically conductive, inwardly bent interconnects formed in a first plurality of electrically conductive layers disposed over the substrate, below the electrically conductive layer in which the fuse line is formed. The inwardly bent interconnects couple the fuse line to a circuit area of the substrate disposed under the fuse line. The fuse structure may further include a protective guard ring formed around the fuse. The guard ring includes a second plurality of electrically conductive interconnects.

Abstract: A method of forming a metal fuse in a semiconductor device. In one embodiment, a specific additional mask is applied to form the metal fuse to reduce the thickness of the fuse. The method also includes forming a fuse window opening that is very shallow in the semiconductor device. The shallower opening allows for better control and removal of the remaining passivation left over the fuse during a fuse burning laser process. The thinner fuse and the thinner remaining passivation reduce the amount of laser energy required to vaporize the oxide and to cut the fuse. The location of the fuse also greatly enlarges the laser energy window that can be utilized to make laser repairs. The larger energy window results in a higher laser repair success ratio even if some deviation in the fabrication process occurs.

Abstract: A method of forming a metal fuse in a semiconductor device. In one embodiment, a specific additional mask is applied to form the metal fuse to reduce the thickness of the fuse. The method also includes forming a fuse window opening that is very shallow in the semiconductor device. The shallower opening allows for better control and removal of the remaining passivation left over the fuse during a fuse burning laser process. The thinner fuse and the thinner remaining passivation reduce the amount of laser energy required to vaporize the oxide and to cut the fuse. The location of the fuse also greatly enlarges the laser energy window that can be utilized to make laser repairs. The larger energy window results in a higher laser repair success ratio even if some deviation in the fabrication process occurs.

Abstract: A new method to test multiple integrated circuit device designs using a single, probe card design is achieved. The method compriseproviding a plurality of integrated circuit device designs each having a probe pad array comprising a fixed pitch. A first integrated circuit device having a first design is loaded on a probing stage. The first integrated circuit device is probed using a vertical probe card comprising a probe tip array. The probe tip array comprises the same fixed pitch. An automated tester is thereby coupled to the first integrated circuit device. The first integrated circuit device is tested with the automated tester. The steps of loading, probing, and testing are repeated on at least one other integrated circuit device having a differing design than the first integrated circuit device.