Abstract: A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.

Abstract: A method for manufacturing a semiconductor structure is provided. A substrate including a fin structure is received, provided or formed. A sacrificial gate layer is formed over the fin structure and a source/drain structure is formed adjacent to the sacrificial gate layer, wherein the sacrificial gate layer is surrounded by a dielectric structure. The sacrificial gate layer is removed, wherein a recess is defined by the dielectric structure. A work function layer is formed in the recess, wherein the work function layer includes an overhang portion at an opening of the recess. A thickness of the work function layer is reduced. A glue layer is formed over the work function layer. A semiconductor structure thereof is also provided.

Abstract: A display apparatus and an fingerprint sensing method thereof are provided. A display panel of the display apparatus has a pixel circuit array, an in-display touch sensor array, and an in-display fingerprint sensor array. A driving circuit drives the in-display fingerprint sensor array to read a fingerprint image. A current display frame period is divided into a plurality of unit periods, each of the unit periods includes at least one fingerprint sensing period and one or both of a display driving period and a touch sensing period. The driving circuit resets a current fingerprint sensor in the in-display fingerprint sensor array during a first fingerprint sensing period among these fingerprint sensing periods of the first display frame period. The driving circuit reads a sensing result of the current fingerprint sensor during a second fingerprint sensing period succeeding to the first fingerprint sensing period.

Abstract: In example implementations, a computing device is provided. The computing device includes a system management bus, a controller communicatively coupled to the system management bus, a noise generating component communicatively coupled to the controller, a noise cancellation codec communicatively coupled to the system management bus, and a speaker communicatively coupled to the noise cancellation codec. The operating parameters of the noise generating component are provided to the controller. The noise cancellation codec is to receive the operating parameters of the noise generating component from the controller via the system management bus and to generate a noise cancellation signal based on the operating parameters. The speaker outputs the noise cancellation signal to cancel noise generated by the noise generating component.

Abstract: A probe pin cleaning pad including a foam layer, a cleaning layer, and a polishing layer is provided. The cleaning layer is disposed between the foam layer and the polishing layer. A cleaning method for a probe pin is also provided.

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Abstract: A FinFET includes a semiconductor substrate, a semiconductor fin, a gate structure, and an isolation structure. The semiconductor fin protrudes from the semiconductor substrate. The gate structure is disposed across a first segment of the semiconductor fin. The isolation structure interrupts a continuity of a second segment of the semiconductor fin. The isolation structure has a first portion and a second portion stacked on the first portion. Sidewalls of the first portion are inclined and sidewalls of the second portion are straight. A top surface of the first portion is coplanar with a top surface of the gate structure.

Abstract: A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.

Abstract: A medicament delivery tooth covering is provided. The medicament delivery tooth covering includes a tooth covering and a carrier layer. The tooth covering has at least one attachment surface that covers a surface of teeth of a user. The carrier layer is arranged on the at least one attachment surface. The carrier layer carries a medicament, and the medicament contains powder particles. When water is introduced to an inner side of the at least one attachment surface of the tooth covering, the water is allowed to pass through the carrier layer, so that the medicament contacts the water. The powder particles are dual-structured powder particles that have a core structure and an outer layer structure that encloses an outer side of the core structure.

Abstract: A calcium phosphate-based core-shell structured material, a method for preparing the same, and an oral care composition using the same are provided. The calcium phosphate-based core-shell structured material includes an amorphous calcium phosphate (ACP) core and a ?-tricalcium phosphate (?-TCP) shell covering the core. The method includes a first sintering step and a second sintering step. The first sintering step is to sinter an ACP material at between 700° C. and 800° C. to obtain an ?-TCP shell. The second sintering step allows the ?-TCP shell to form into the ?-TCP shell by sintering at between 800° C. and 900° C. The oral care composition includes a calcium phosphate mixture and an orally receivable carrier. The calcium phosphate mixture includes a powder of the calcium phosphate-based core-shell structured material and a tricalcium phosphate powder mixed in a weight ratio from 3:5 to 3:7.

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Abstract: A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.

Abstract: An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Abstract: A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.

Abstract: A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

Abstract: An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.

Abstract: An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.