Patents by Inventor Chao-Hsuan Chen

Chao-Hsuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170012227
    Abstract: An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.
    Type: Application
    Filed: April 12, 2016
    Publication date: January 12, 2017
    Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chao-Hsuan Chen, Cheng-Hang Hsu