Abstract: An exemplary housing of electronic device includes a metallic main body and a metallic three-dimensional weaving member formed on at least a part of a surface of the metallic main body. An electronic device using the housing is also provided. The housing of the electronic device has a textured touching feeling.

Abstract: A method to fabricate a pattern on a housing, includes following steps: placing a film having a first lightproof area and a first light-transmissible area on a housing having light-sensitive inks formed in surface; radiating light on the film and light passing through the light-transmissible area and solidifying the light-sensitive inks; removing the film from the housing and cleaning the un-solidified light-sensitive inks; wiredrawing first wires in the housing and forming first wires in exposed area correspondingly; covering part of the first wires and wiredrawing second wires, the second wires crosses with part of the first wires.

Abstract: A metal housing (10) includes a base (110) and an outer layer (120). The base is made of a thin metal plate. The outer layer includes a plurality of first sections (121) and second sections (122). The material of the first sections is different from that of the second sections. The first sections and the second sections are arranged on the base in an interleaving manner.

Abstract: A metal housing (10) includes a first metal layer (11) and a second metal layer (12). The material of the first metal layer is selected from the group consisting of stainless steel, titanium and titanium alloy. The material of the second metal layer is selected from the group consisting of aluminum, aluminum alloy and magnesium alloy. The second metal layer is integrally formed with the first metal layer.

Abstract: The present invention provides an electron amplification plate placed between a first substrate and a second substrate of a field emission display device. The electron amplification plate comprises at least two insulating layers for electrical insulation; and at least one conductive electrode layer having plural apertures, wherein the conductive electrode layer is sandwiched between the insulating layers. The surface of the inner wall of the apertures is coated with an electron-amplifying material for multiplying the quantity of electrons as the surface is impacted. The inner wall of each aperture comprises an upper concave wall and a lower concave wall, and the lower concave wall is used for collecting electrons, and the upper concave wall is used for focusing electrons. Thereby, the electron beam emitted from the emitters can be effectively amplified, and color purity of the field emission display device is high.

Abstract: A field emission display (FED) device, which includes a top substrate, a bottom substrate, and an intermediate plate set located between the top substrate and the bottom substrate. The top substrate has a phosphor layer and an anode. The bottom substrate has a cathode, and an electron emitter. The intermediate plate set has a metal plate with multiple holes, an insulating layer with multiple holes, and a gate layer. In the FED device, the insulating layer is located between the gate layer and the metal plate for electrical insulation, and the gate layer has a gap from the bottom substrate. Thus, the processing steps prepared for the bottom substrate can be reduced to thereby prevent the electron emitters from damage. The number of electrons bombarding on the phosphor layer is effectively increased to thereby increase the brightness and color contrast on pixels.

Abstract: A field emission device (FED) includes a top substrate having an anode electrode and a phosphor layer, a lower substrate, at least one cathode electrode having an opening-pattern with at least one opening, an insulating layer located on the cathode electrode, a gate layer located on the insulating layer, and an electron emitter located in the opening of the cathode electrode. The electron emitter is adjacent to the cathode electrode and is electrically connected therewith. The cathode electrode having the opening-pattern is located on a bottom panel. Through the structure illustrated above, uniformity of emitting electron density can be improved and brightness and contrast of color for the FED can be enhanced.

Abstract: The present invention provides a spacer placed between a top substrate and a bottom substrate for a field emission display device. The spacer comprises at least two insulating layers for electrical insulation; and at least one metal layer sandwiched between the insulating layers, wherein the metal layer has plural apertures for electrons passing therethrough and disturbing pathway of electrons as the electrons impact the apertures.

Abstract: The present invention provides an electron amplification plate placed between a first substrate and a second substrate of a field emission display device. The electron amplification plate comprises at least two insulating layers for electrical insulation; and at least one conductive electrode layer having plural apertures, wherein the conductive electrode layer is sandwiched between the insulating layers. The surface of the inner wall of the apertures is coated with an electron-amplifying material for multiplying the quantity of electrons as the surface is impacted. The inner wall of each aperture comprises an upper concave wall and a lower concave wall, and the lower concave wall is used for collecting electrons, and the upper concave wall is used for focusing electrons. Thereby, the electron beam emitted from the emitters can be effectively amplified, and color purity of the field emission display device is high.

Abstract: A method of selective growth of carbon nano-structures on silicon substrates, comprising definition of the predetermined area on Si substrates to be grown carbon nano-structures, formation of metal-silicides on the predetermined area on the said Si substrates to be grown carbon nano-structures, and growth of carbon nano-structures on the said metal-silicides by chemical vapor deposition method. Locations of the said metal-silicides on the said Si substrates are growth area of the nano-structures, whereby function of selective growth of carbon nano-structures on Si substrates can be achieved. Besides, the said metal-silicides area is manufactured by semiconductor processes, and is directly compatible with IC processes.

Abstract: The present invention provides a method to control the magnetic alloy-encapsulated carbon-base nanostructures apply an appropriate amount of magnetic field during magnetic alloy-encapsulated nanostructure deposition and post treatment for improved magnetic anisotropy by electron cyclotron resonance chemical vapor deposition (ECR-CVD), the catalyst and additive on surface of substrate use DC bias and heating treatment and then etching the substrate during plasma pretreatment. The present invention is to provide control of the size and shape of the nanostructures, capability to be effectively manipulated the magnetic anisotropy and coercive force of the encapsulated magnetic nanoparticles, capability to store the magnetic signals with nano-resolution.