Abstract: A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: A light emitting diode apparatus includes a heat dissipating substrate, a composite layer, an epitaxial layer, a first electrode and a second electrode. The composite layer includes a reflective layer, a transparent conductive layer and a patterned insulating thermoconductive layer, which is disposed between the reflective layer and the transparent conductive layer. The composite layer is disposed between the heat dissipating substrate and the epitaxial layer and allows currents to concentrate to the reflective layer or the transparent conductive layer and then to be diffused evenly through the transparent conductive layer. The epitaxial layer includes a first semiconductor layer electrically connected with the first electrode, an active layer and a second semiconductor layer electrically connected with the second electrode.

Abstract: A light-emitting diode (LED) structure including a substrate, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer and a transparent conductive layer is provided. The first type doped semiconductor layer is located on the substrate. The active layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the active layer, and the transparent conductive layer is disposed on the second type doped semiconductor layer. A portion of the transparent conductive layer and the second type doped semiconductor layer underneath the transparent conductive layer are removed by etching, so as to make the transparent conductive layer to be a mesh structure and to make a surface of the second type doped semiconductor layer to be a rough surface. The occurrence of total internal reflection inside the LED is reduced.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.