Patents by Inventor Chao Peng Chen
Chao Peng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240144098Abstract: Aspects of the present disclosure provide an automated labeling system. For example, the automated labeling system can include an automated labeling module (ALM) configured to receive wireless signals and ground truth of learning object and label the wireless signals with the ground truth when receiving the ground truth to generate labeled training data. The automated labeling system can also include a training database coupled to the ALM. The training database can be configured to store the labeled training data.Type: ApplicationFiled: October 16, 2023Publication date: May 2, 2024Applicant: MEDIATEK INC.Inventors: Chao Peng WANG, Chia-Da LEE, Po-Yu CHEN, Hsiao-Chien CHIU, Yi-Cheng LU
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Publication number: 20240087356Abstract: A display apparatus and an fingerprint sensing method thereof are provided. A display panel of the display apparatus has a pixel circuit array, an in-display touch sensor array, and an in-display fingerprint sensor array. A driving circuit drives the in-display fingerprint sensor array to read a fingerprint image. A current display frame period is divided into a plurality of unit periods, each of the unit periods includes at least one fingerprint sensing period and one or both of a display driving period and a touch sensing period. The driving circuit resets a current fingerprint sensor in the in-display fingerprint sensor array during a first fingerprint sensing period among these fingerprint sensing periods of the first display frame period. The driving circuit reads a sensing result of the current fingerprint sensor during a second fingerprint sensing period succeeding to the first fingerprint sensing period.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: Novatek Microelectronics Corp.Inventors: Cho-Hsuan Jhang, Chao-Yu Meng, Shih-Cheng Chen, Chih-Peng Hsia
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Patent number: 9797047Abstract: A method of removing copper oxide from copper surfaces is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.Type: GrantFiled: August 10, 2015Date of Patent: October 24, 2017Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jas Chudasama, Chien-Li Lin, David Wagner
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Publication number: 20150345030Abstract: A method of removing copper oxide from copper surfaces is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.Type: ApplicationFiled: August 10, 2015Publication date: December 3, 2015Inventors: Chao-Peng Chen, Jas Chudasama, Chien-Li Lin, David Wagner
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Patent number: 9103012Abstract: A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.Type: GrantFiled: February 11, 2011Date of Patent: August 11, 2015Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jas Chudasama, Chien-Li Lin, David Wagner
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Patent number: 8920616Abstract: An electroplating method is disclosed that selectively deposits a greater thickness of a metal or alloy layer on a region of wafer that has a higher thickness loss during a subsequent chemical mechanical polish process. A paddle assembly has three rectangular sides joined at their edges to form a triangle shape from an end view, and a notch in a bottom side that faces a wafer during the plating process. The notch extends along second and third paddle sides to a height up to about 50% of the paddle thickness. The thickness in a K-block region that has two sides formed parallel to the wafer flat is selectively increased by aligning a first side of the paddle notch side directly over one K-block side and aligning a second notch side directly over a second K-block side during a paddle movement cycle. The notch may be rectangular shaped or tapered.Type: GrantFiled: June 18, 2012Date of Patent: December 30, 2014Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jaswant Chudasama, Pradeep Mishra, Chen-Li Lin, David Wagner
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Publication number: 20130334051Abstract: An electroplating method is disclosed that selectively deposits a greater thickness of a metal or alloy layer on a region of wafer that has a higher thickness loss during a subsequent chemical mechanical polish process. A paddle assembly has three rectangular sides joined at their edges to form a triangle shape from an end view, and a notch in a bottom side that faces a wafer during the plating process. The notch extends along second and third paddle sides to a height up to about 50% of the paddle thickness. The thickness in a K-block region that has two sides formed parallel to the wafer flat is selectively increased by aligning a first side of the paddle notch side directly over one K-block side and aligning a second notch side directly over a second K-block side during a paddle movement cycle. The notch may be rectangular shaped or tapered.Type: ApplicationFiled: June 18, 2012Publication date: December 19, 2013Applicant: HEADWAY TECHNOLOGIES, INC.Inventors: Chao-Peng Chen, Jaswant Chudasama, Pradeep Mishra, Chen-Li Lin, David Wagner
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Patent number: 8273233Abstract: A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (?) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.Type: GrantFiled: July 17, 2009Date of Patent: September 25, 2012Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jas Chudasama, Situan Lam, Chien-Li Lin
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Publication number: 20120205344Abstract: A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.Type: ApplicationFiled: February 11, 2011Publication date: August 16, 2012Inventors: Chao-Peng Chen, Jas Chudasama, Chien-Li Lin, David Wagner
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Patent number: 8236484Abstract: As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.Type: GrantFiled: November 14, 2003Date of Patent: August 7, 2012Assignee: Headway Technologies, Inc.Inventors: Jei-Wei Chang, Chao-Peng Chen, Chunping Luo, Shou-Chen Kao
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Publication number: 20110094888Abstract: A method of rejuvenating a Ru plating seed layer during write pole fabrication in a PMR head is disclosed that involves forming an opening in a mold forming layer. A Ru seed layer is deposited by CVD within the opening and on a top surface of the mold forming layer. The substrate with the Ru seed layer is immersed in an acidic solution and an electric potential is applied for 1 to 2 minutes such that hydrogen is generated to reduce ruthenium oxides to Ru metal on the seed layer surface in an activation step. One or more surfactants are used to improve wettability of the Ru layer. The substrate is transferred directly to an electroplating solution without drying following the activation step to minimize exposure to oxygen that could regenerate oxides on the surface of the Ru layer. As a result, write pole voids and delamination are significantly reduced.Type: ApplicationFiled: October 26, 2009Publication date: April 28, 2011Inventors: Chao-Peng Chen, Chien-Li Lin, Jas Chudasama, Situan Lam
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Publication number: 20110011744Abstract: A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (?) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.Type: ApplicationFiled: July 17, 2009Publication date: January 20, 2011Inventors: Chao-Peng Chen, Jas Chudasama, Situan Lam, Chien-Li Lin
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Patent number: 7864490Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.Type: GrantFiled: September 18, 2007Date of Patent: January 4, 2011Assignee: Headway Technologies, Inc.Inventors: Jeiwei Chang, Stuart Kao, Chao Peng Chen, Chunping Luo, Kochan Ju, Min Li
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Patent number: 7781152Abstract: A method for forming a bi-layer lift-off mask, including a hardened photoresistive stencil layer on a PMGI layer, for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns and TMJ MRAM devices of similar critical dimensions. The stencil portion of the mask includes a narrow portion with sharply defined edge and corners which are formed, without rounding or extreme undercut, by a photolithographic process which includes the formation, in a first development process, of auxiliary pattern pieces over the corners of the stencil and a subsequent oxidation in ozone for removing those auxiliary pattern pieces and obtaining sharply defined edge and corners and a controlled dissolution of the PMGI layer.Type: GrantFiled: July 28, 2004Date of Patent: August 24, 2010Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Rina Kaji, Jei-Wei Chang
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Patent number: 7633712Abstract: A write pole for vertical magnetic recording is described. It includes a trapezoidal prism of high magnetic moment material, having inwardly sloping sidewalls. Its parallel surfaces are between about 0.1 and 0.3 microns apart and the sidewalls slope in the range of 15.5 to 60 degrees relative to vertical.Type: GrantFiled: April 10, 2008Date of Patent: December 15, 2009Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jei-Wei Chang, Xiaohong Yang
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Patent number: 7431815Abstract: A process for cathodically reducing unwanted Fe+3 ions to needed Fe+2 ions in an acidic ferrous based plating bath without reducing agents is disclosed. An auxiliary potential of 0.1 to 0.3 volts vs. SCE is applied between the working electrode and a reference electrode and can reduce the molar ratio [Fe+3]/[Fe+2] to 1 ppm without depositing Fe or other metals on the working electrode or causing hydrogen evolution. The process is applicable to electroplating soft magnetic films such as NiFe, FeCo, and CoNiFe and can be performed during plating or during cell idling. The process is cost effective by reducing the amount of hazardous waste and tool down time due to routine solution swap. Other benefits are improved uniformity in composition and thickness of plated films because issues associated with decomposed reducing agents are avoided.Type: GrantFiled: May 5, 2005Date of Patent: October 7, 2008Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jas Chudasama, Situan Lam
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Publication number: 20080213691Abstract: A write pole for vertical magnetic recording is described. It includes a trapezoidal prism of high magnetic moment material, having inwardly sloping sidewalls. Its parallel surfaces are between about 0.1 and 0.3 microns apart and the sidewalls slope in the range of 15.5 to 60 degrees relative to vertical.Type: ApplicationFiled: April 10, 2008Publication date: September 4, 2008Inventors: Chao-Peng Chen, Jei-Wei Chang, Xiaohong Yang
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Patent number: 7378226Abstract: A method for forming a big-layer lift-off mask for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns. The mask layers are formed symmetrically on each other, each layer of the mask having a novel dog-bone shape and the lower mask layer being substantially undercut relative to the upper mask layer. The central portion of the lower mask layer forms a narrow ridge that maintains the upper mask layer at a fixed height above a substrate, thereby avoiding problems associated with big-layer lift-off masks of the prior art. The method of forming the lower ridge requires a carefully controlled undercutting of the lower mask layer, which is accomplished by using an ozone-assisted oxidation process.Type: GrantFiled: April 20, 2004Date of Patent: May 27, 2008Assignees: Headway Technologies, Inc., TDK CorporationInventors: Chao-Peng Chen, Rina Kaji, Jei-Wei Chang
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Patent number: 7368227Abstract: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.Type: GrantFiled: October 27, 2006Date of Patent: May 6, 2008Assignee: Headway Technologies, Inc.Inventors: Chao-Peng Chen, Jei-Wei Chang, Xiaohong Yang
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Patent number: 7279269Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.Type: GrantFiled: December 12, 2003Date of Patent: October 9, 2007Assignee: Headway Technologies, Inc.Inventors: Jeiwei Chang, Stuart Kao, Chao Peng Chen, Chunping Luo, Kochan Ju, Min Li