Patents by Inventor Chao Peng Chen

Chao Peng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7279269
    Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: October 9, 2007
    Assignee: Headway Technologies, Inc.
    Inventors: Jeiwei Chang, Stuart Kao, Chao Peng Chen, Chunping Luo, Kochan Ju, Min Li
  • Publication number: 20070042299
    Abstract: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.
    Type: Application
    Filed: October 27, 2006
    Publication date: February 22, 2007
    Inventors: Chao-Peng Chen, Jei-Wei Chang, Xiaohong Yang
  • Patent number: 7134182
    Abstract: Conventional liftoff processes used to define track width in magnetic read heads can produce an uneven etch-depth of dielectric materials around the sensor and cause shorting to the overlay top lead layer. This problem has been overcome by printing the images of track width and stripe height onto an intermediate layer to form a hard mask. Through this hard mask, the GMR stack can be selectively etched and then back-filled with a high-resistivity material by using newly developed electroless plating processes.
    Type: Grant
    Filed: November 17, 2003
    Date of Patent: November 14, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Jei-Wei Chang, Chao-Peng Chen, Youfeng Zheng
  • Publication number: 20060249392
    Abstract: A process for cathodically reducing unwanted Fe+3 ions to needed Fe+2 ions in an acidic ferrous based plating bath without reducing agents is disclosed. An auxiliary potential of 0.1 to 0.3 volts vs. SCE is applied between the working electrode and a reference electrode and can reduce the molar ratio [Fe+3]/[Fe+2] to 1 ppm without depositing Fe or other metals on the working electrode or causing hydrogen evolution. The process is applicable to electroplating soft magnetic films such as NiFe, FeCo, and CoNiFe and can be performed during plating or during cell idling. The process is cost effective by reducing the amount of hazardous waste and tool down time due to routine solution swap. Other benefits are improved uniformity in composition and thickness of plated films because issues associated with decomposed reducing agents are avoided.
    Type: Application
    Filed: May 5, 2005
    Publication date: November 9, 2006
    Inventors: Chao-Peng Chen, Jas Chudasama, Situan Lam
  • Patent number: 7132221
    Abstract: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.
    Type: Grant
    Filed: September 12, 2003
    Date of Patent: November 7, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Chao-Peng Chen, Jei-Wei Chang, Xiaohong Yang
  • Patent number: 7118680
    Abstract: A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
    Type: Grant
    Filed: November 20, 2003
    Date of Patent: October 10, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Jei-Wei Chang, Chao-Peng Chen, Min Li, Kochan Ju
  • Patent number: 7111386
    Abstract: A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.
    Type: Grant
    Filed: November 3, 2005
    Date of Patent: September 26, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Chao-Peng Chen, Kevin Lin, Jei-Wei Chang, Kochan Ju, Hui-Chuan Wang
  • Publication number: 20060048375
    Abstract: A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.
    Type: Application
    Filed: November 3, 2005
    Publication date: March 9, 2006
    Inventors: Chao-Peng Chen, Kevin Lin, Jei-Wei Chang, Kochan Ju, Hui-Chuan Wang
  • Publication number: 20060024618
    Abstract: A method for forming a bi-layer lift-off mask, including a hardened photoresistive stencil layer on a PMGI layer, for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns and TMJ MRAM devices of similar critical dimensions. The stencil portion of the mask includes a narrow portion with sharply defined edge and corners which are formed, without rounding or extreme undercut, by a photolithographic process which includes the formation, in a first development process, of auxiliary pattern pieces over the corners of the stencil and a subsequent oxidation in ozone for removing those auxiliary pattern pieces and obtaining sharply defined edge and corners and a controlled dissolution of the PMGI layer.
    Type: Application
    Filed: July 28, 2004
    Publication date: February 2, 2006
    Inventors: Chao-Peng Chen, Rina Kaji, Jei-Wei Chang
  • Patent number: 6973712
    Abstract: A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.
    Type: Grant
    Filed: March 7, 2002
    Date of Patent: December 13, 2005
    Assignee: Headway Technologies, Inc.
    Inventors: Chao-Peng Chen, Kevin Lin, Jei-Wei Chang, Kochan Ju, Hui-Chuan Wang
  • Publication number: 20050233258
    Abstract: A method for forming a bi-layer lift-off mask for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns. The mask layers are formed symmetrically on each other, each layer of the mask having a novel dog-bone shape and the lower mask layer being substantially undercut relative to the upper mask layer. The central portion of the lower mask layer forms a narrow ridge that maintains the upper mask layer at a fixed height above a substrate, thereby avoiding problems associated with bi-layer lift-off masks of the prior art. The method of forming the lower ridge requires a carefully controlled undercutting of the lower mask layer, which is accomplished by using an ozone-assisted oxidation process.
    Type: Application
    Filed: April 20, 2004
    Publication date: October 20, 2005
    Inventors: Chao-Peng Chen, Rina Kaji, Jei-Wei Chang
  • Patent number: 6905811
    Abstract: As feature sizes approach 0.1 ?m or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one that is used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.
    Type: Grant
    Filed: April 22, 2003
    Date of Patent: June 14, 2005
    Assignee: Headway Technologies, Inc.
    Inventors: Chao Peng Chen, Chunping Luo, Stuart Kao, Jei-Wei Chang
  • Publication number: 20050111143
    Abstract: A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
    Type: Application
    Filed: November 20, 2003
    Publication date: May 26, 2005
    Inventors: Jei-Wei Chang, Chao-Peng Chen, Min Li, Kochan Ju
  • Publication number: 20050106509
    Abstract: As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.
    Type: Application
    Filed: November 14, 2003
    Publication date: May 19, 2005
    Inventors: Jei-Wei Chang, Chao-Peng Chen, Chunping Luo, Shou-Chen Kao
  • Publication number: 20050102820
    Abstract: Conventional liftoff processes used to define track width in magnetic read heads can produce an uneven etch-depth of dielectric materials around the sensor and cause shorting to the overlay top lead layer. This problem has been overcome by printing the images of track width and stripe height onto an intermediate layer to form a hard mask. Through this hard mask, the GMR stack can be selectively etched and then back-filled with a high-resistivity material by using newly developed electroless plating processes.
    Type: Application
    Filed: November 17, 2003
    Publication date: May 19, 2005
    Inventors: Jei-Wei Chang, Chao-Peng Chen, Youfeng Zheng
  • Publication number: 20050058952
    Abstract: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.
    Type: Application
    Filed: September 12, 2003
    Publication date: March 17, 2005
    Inventors: Chao-Peng Chen, Jei-Wei Chang, Xiaohong Yang
  • Publication number: 20040214109
    Abstract: As feature sizes approach 0.1 &mgr;m or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one thatis used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.
    Type: Application
    Filed: April 22, 2003
    Publication date: October 28, 2004
    Applicant: Headway Technologies, Inc.
    Inventors: Chao Peng Chen, Chunping Luo, Stuart Kao, Jei-Wei Chang
  • Publication number: 20030167626
    Abstract: A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.
    Type: Application
    Filed: March 7, 2002
    Publication date: September 11, 2003
    Applicant: Headway Technologies, Inc.
    Inventors: Chao-Peng Chen, Kevin Lin, Jei-Wei Chang, Kochan Ju, Hui-Chuan Wang
  • Patent number: 6476963
    Abstract: Photographic binoculars include binoculars and a tube with a camera detachably connected to the tube. A focus adjusting mechanism of the binoculars correspond to a focus adjusting mechanism of the tube so that the adjustment to the focal length of the binoculars simultaneously adjusts the focal length of the tube. The camera is able to record an image of a subject observed from the binoculars.
    Type: Grant
    Filed: October 16, 2001
    Date of Patent: November 5, 2002
    Assignee: Navitek Technology Inc.
    Inventor: Chao-Peng Chen
  • Patent number: 6156185
    Abstract: Disclosed is a method of reactivating a deactivated anode that has a coating of a noble metal or noble metal oxide on a substrate. A coating of a noble metal is deposited on the anode electrolessly. The noble metal in the deposited coating can be platinum, palladium, iridium, rhodium, ruthenium, osmium, or a mixture thereof.
    Type: Grant
    Filed: June 11, 1999
    Date of Patent: December 5, 2000
    Assignee: Occidental Chemical Corporation
    Inventors: Chao-Peng Chen, Tilak V. Bommaraju