Abstract: A planter suitable for block seeds that relates to the technical field of agricultural seeding machinery is disclosed. The planter includes a frame, a fertilizing tank, a fertilizing box, a seeding mechanism, a control mechanism, a seed box, a ridging mechanism, land wheels, a seeding furrower, a fertilizing furrower, a seed-clearing mechanism, and a replanting mechanism. The fertilizing tank, the fertilizing furrower, the fertilizing box, the seeding furrower, the seeding mechanism, the land wheels, the control mechanism, the seed box, and the ridging mechanism are mounted in turn from one end to the other end of the frame. A photoelectric sensor of an active infrared intrusion detector is adopted to dynamically monitor the presence of the seed potatoes on a seed-discharge spoon in a conveying process. Seeds are replanted with the control mechanism when the seeds are sowed with an empty spoon.

Abstract: Methods for programming memory cells of a resistive memory device include applying a voltage pulse sequence to a memory cell to set a logic state of the memory cell. An initial set sequence of voltage pulses may be applied to the memory cell, followed by a reform voltage pulse having an amplitude greater than the amplitudes of the initial set sequence, and within ±5% of the amplitude of a voltage pulse used in an initial forming process. Additional voltage pulses having amplitudes that are less than the amplitude of the reform voltage pulse may be subsequently applied. By applying a reform voltage pulse in the middle of, or at the end of, a memory set sequence including multiple voltage pulses, a resistive memory device may have a larger memory window and improved data retention relative to resistive memory devices programmed using conventional programming methods.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: The present invention provides novel DNA molecules and constructs, including their nucleotide sequences, useful for modulating gene expression in plants and plant cells. The invention also provides transgenic plants, plant cells, plant parts, seeds, and commodity products comprising the DNA molecules operably linked to heterologous transcribable polynucleotides, along with methods of their use.

Abstract: The present disclosure provides a transmission line defect identification method based on a saliency map and a semantic-embedded feature pyramid, including the following steps: step 1: cleaning and classifying a dataset; step 2: generating a super-resolution image for a small target of a transmission line by using an Electric Line-Enhanced Super-Resolution Generative Adversarial Network (EL-ESRGAN) model; step 3: performing image saliency detection on the dataset by constructing a U2-Net; step 4: performing data augmentation on the dataset by using GridMask and random cutout algorithms based on a saliency map, and generating a classified dataset; and step 5: performing image classification on a normal set and a defect set by using a ResNet34 classification algorithm and a deep semantic embedding (DSE)-based feature pyramid classification network.

Abstract: Techniques are provided for assessing uniqueness of information using string-based collection frequency techniques. One method comprises obtaining multiple collections of documents from at least one data source; determining a collection frequency for a given character string based on a number of the collections comprising the given character string relative to a total number of the collections; assigning a uniqueness rating to the given character string based at least in part on a comparison of the collection frequency of the given character string to a collection frequency of one or more additional character strings in one or more of the plurality of collections; and performing an automated action using the given character string based on the assigned uniqueness rating. The automated action may comprise protecting the given character string and/or identifying the given character string as important information satisfying one or more importance criteria.

Abstract: Methods for programming memory cells of a resistive memory device include applying a voltage pulse sequence to a memory cell to set a logic state of the memory cell. An initial set sequence of voltage pulses may be applied to the memory cell, followed by a reform voltage pulse having an amplitude greater than the amplitudes of the initial set sequence, and within ±5% of the amplitude of a voltage pulse used in an initial forming process. Additional voltage pulses having amplitudes that are less than the amplitude of the reform voltage pulse may be subsequently applied. By applying a reform voltage pulse in the middle of, or at the end of, a memory set sequence including multiple voltage pulses, a resistive memory device may have a larger memory window and improved data retention relative to resistive memory devices programmed using conventional programming methods.

Abstract: Methods for programming memory cells of a resistive memory device include applying a voltage pulse sequence to a memory cell to set a logic state of the memory cell. An initial set sequence of voltage pulses may be applied to the memory cell, followed by a reform voltage pulse having an amplitude greater than the amplitudes of the initial set sequence, and within ±5% of the amplitude of a voltage pulse used in an initial forming process. Additional voltage pulses having amplitudes that are less than the amplitude of the reform voltage pulse may be subsequently applied. By applying a reform voltage pulse in the middle of, or at the end of, a memory set sequence including multiple voltage pulses, a resistive memory device may have a larger memory window and improved data retention relative to resistive memory devices programmed using conventional programming methods.

Abstract: The invention relates to a bogie for a rail vehicle characterized by a high lightweight construction potential. The bogie (1, 1*, 1**) according to the invention has, for primary suspension, a torsion spring system (12) in the inner volume of which a roll stabilizer having a torsion rod (11) is arranged in a torsionally movable manner. The roll stabilizer can be articulated to the car body of the rail vehicle or to the torsion spring system (12). The bogie (1, 1*, 1**) according to the invention advantageously has a particularly large installation space for built-in components.

Abstract: An apparatus, system and method for testing a micro-optical component system. The apparatus, system and method may include a receiver for receiving the micro optical component system; a light source; and a coupler for passing aspects of light from the light source through the micro optical component system to a termination, and for passing remaining aspects from the light source back reflected from the micro optical component system to a power meter. A reading at the power meter of the back reflection may correspond to a diagnosis of the micro optical component system.

Abstract: The present invention provides novel DNA molecules and constructs, including their nucleotide sequences, useful for modulating gene expression in plants and plant cells. The invention also provides DNA molecules and constructs, including their nucleotide sequences, useful for expressing proteins in plants to promote symbiotic infection. The invention also provides plants and plant cells transgenic plants, plant cells, plant parts, seeds, and commodity products comprising the DNA molecules operably linked to heterologous transcribable polynucleotides, along with methods of their use.

Abstract: Methods for programming memory cells of a resistive memory device include applying a voltage pulse sequence to a memory cell to set a logic state of the memory cell. An initial set sequence of voltage pulses may be applied to the memory cell, followed by a reform voltage pulse having an amplitude greater than the amplitudes of the initial set sequence, and within ±5% of the amplitude of a voltage pulse used in an initial forming process. Additional voltage pulses having amplitudes that are less than the amplitude of the reform voltage pulse may be subsequently applied. By applying a reform voltage pulse in the middle of, or at the end of, a memory set sequence including multiple voltage pulses, a resistive memory device may have a larger memory window and improved data retention relative to resistive memory devices programmed using conventional programming methods.

Abstract: Methods, apparatus, and processor-readable storage media for implementing a machine learning-based recommendation engine for storage system usage within an enterprise are provided herein. An example computer-implemented method includes processing input data pertaining to multiple storage systems within an enterprise; determining association rules applicable to the multiple storage systems by applying machine learning techniques to the processed input data; generating configuration-related recommendations applicable to one or more of the storage systems by applying content filtering techniques to the determined association rules; and outputting, via user interfaces, the configuration-related recommendations to a user for use in connection with storage system configuration actions and/or an entity within the enterprise for use in connection with user-support actions.

Abstract: Methods, apparatus, and processor-readable storage media for determining user retention values using machine learning and heuristic techniques are provided herein. An example computer-implemented method includes processing multiple forms of input data pertaining to interactions between a user and an enterprise; generating one or more user sentiment values from the processed input data by applying machine learning techniques to the processed input data; determining a user-specific estimate for the enterprise retaining the user, wherein determining the user-specific estimate comprises combining the one or more sentiment values with one or more storage system heuristics-based values derived from enterprise-related data; and outputting the user-specific estimate to at least one entity within the enterprise for use in connection with user-support actions.

Abstract: Techniques are provided for assessing uniqueness of information using string-based collection frequency techniques. One method comprises obtaining multiple collections of documents from at least one data source; determining a collection frequency for a given character string based on a number of the collections comprising the given character string relative to a total number of the collections; assigning a uniqueness rating to the given character string based at least in part on a comparison of the collection frequency of the given character string to a collection frequency of one or more additional character strings in one or more of the plurality of collections; and performing an automated action using the given character string based on the assigned uniqueness rating. The automated action may comprise protecting the given character string and/or identifying the given character string as important information satisfying one or more importance criteria.

Abstract: An electronic structure and a method for fabricating the same are provided. An electronic component and conductive elements are disposed on a carrier. An encapsulation layer encapsulates the electronic component and the conductive elements. The encapsulation layer has concave portions corresponding in position to the conductive elements. Each of the conductive elements is in no contact with corresponding one of the concave portions.

Abstract: An apparatus, system and method for micro welding, wherein insulated object, such as a wire, that includes a metallic conductor that is at least partially covered by one or more layers of insulation, is positioned across a termination point. A laser beam may be applied to an area of the insulated object overlapping the termination point, wherein the applied laser beam is configured to substantially simultaneously (i) ablate the one or more layers of insulation in a first region of the area, (ii) weld the metallic conductor to the termination point in a second region of the area, and (iii) detach a portion of the object from the termination point in a third region of the area.

Abstract: A method of forming a memory device includes: forming a polish stop layer over a metallization layer in an inter-metal dielectric layer; performing an etching process to form an opening in the polish stop layer, in which a sidewall of the opening extends at an acute angle relative to a top surface of the polish stop layer; forming an electrode material in the opening and over the polish stop layer; planarizing the electrode material until a top surface of the polish stop layer is exposed so as to form a bottom electrode surrounded by the polish stop layer; and forming a stack of a resistance switching layer and a top electrode over the bottom electrode.

Abstract: A memory device includes a metal structure, a first dielectric layer, a bottom electrode, a second dielectric layer, a resistance switching layer, and a top electrode. The first dielectric layer surrounds the metal structure. The bottom electrode is in contact with a top surface of the metal structure. The second dielectric layer surrounds the bottom electrode, in which a top surface of the bottom electrode is higher than a top surface of the second dielectric layer. The resistance switching layer is over the bottom electrode. The top electrode is over the resistance switching layer.