Abstract: A structure including a first semiconductor die, second semiconductor dies, a bridge die, and a gap filling material is provided. The first semiconductor die includes integrated circuit regions. The second semiconductor dies are disposed over and electrically connected to the first semiconductor die. The bridge die is disposed over and electrically connected to the first semiconductor die, and the integrated circuit regions are electrically connected to each other through the bridge die. The gap filling material is disposed on the first semiconductor die to laterally encapsulate the bridge die and the second semiconductor dies.

Abstract: A semiconductor package includes a first die and a through via. The through via is electrically connected to the first die. The through via includes a first conductive layer having a first width, a second conductive layer having a second width different from the first width and a first seed layer disposed aside an interface between the first conductive layer and the second conductive layer.

Abstract: An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include a first die, a first gap-fill layer along sidewalls of the first die, a first bonding layer on the first die and the first gap-fill layer, and a first die connector in the first bonding layer. The first die connector may be directly over an interface between the first die and the first gap-fill layer.

Abstract: A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Abstract: An embodiment package comprises an integrated circuit die encapsulated in an encapsulant, a patch antenna over the integrated circuit die, and a dielectric feature disposed between the integrated circuit die and the patch antenna. The patch antenna overlaps the integrated circuit die in a top-down view. The thickness of the dielectric feature is in accordance with an operating bandwidth of the patch antenna.

Abstract: A semiconductor device and methods of manufacture are discussed herein. A device includes a first semiconductor package including a first semiconductor die encapsulated in an insulating material, a first thermal expansion resistant layer over the first semiconductor die, a bonding layer over the first thermal expansion resistant layer and the insulating material, and a second semiconductor die directly bonded to the bonding layer.

Abstract: A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.

Abstract: Provided is packages and method of fabricating the same. The package includes a first die, a second die, and an inductor. The second die is bonded to the first die through a bonding structure thereof. The inductor is located in the bonding structure. The inductor includes a spiral pattern parallel to top surfaces of the first die and the second die, and the spiral pattern includes at least a turn.

Abstract: A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

Abstract: A stacking structure including a first die and a second die bonded with the first die is provided. The first die has a first region and a second region encircled by the first region. The first die includes first metallization structures having a first seal ring structure and a first bonding structure having first dummy pads located over the first seal ring structure. The second die includes second metallization structures having a second seal ring structure and a second bonding structure having second dummy pads located over the second seal ring structure. The first die and the second die are bonded through bonding of the first and second bonding structures. The first and second seal ring structures are substantially vertically aligned, and the first dummy pads are respectively bonded with the second dummy pads.

Abstract: Embodiments include methods of forming three-dimensional packages and the packages resulting therefrom. The packages may utilize a bridge die to electrically connect one die to another die and at least one additional die adjacent to the bridge die. The height-to-width ratio of the gap between the bridge die and the at least one additional die is controlled by thinning the bridge die to be thinner than the at least one additional die. The packages may utilize landing structures to adjoin a dielectric material of an attached die to a metallic landing structure of a base die.

Abstract: Provided is packages and method of fabricating the same. The package includes a first die, a second die, and an inductor. The second die is bonded to the first die through a bonding structure thereof. The inductor is located in the bonding structure. The inductor includes a spiral pattern parallel to top surfaces of the first die and the second die, and the spiral pattern includes at least a turn.

Abstract: A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

Abstract: A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.

Abstract: A method includes etching a substrate to form an opening, depositing a first dielectric liner extending into the opening, and depositing a second dielectric liner over the first dielectric liner. The second dielectric liner extends into the opening. A conductive material is filled into the opening. The method further includes performing a first planarization process to planarize the conductive material so that a portion of the conductive material in the opening forms a through-via, performing a backside grinding process on the substrate until the through-via is revealed from a backside of the substrate, and forming a conductive feature on the backside of the substrate. The conductive feature is electrically connected to the through-via.

Abstract: A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.

Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.

Abstract: A method includes: forming first semiconductor dies in a first wafer, each die of the first semiconductor dies comprising: first active devices over a front-side of a first semiconductor substrate; performing first probe tests on the first wafer; based on the first probe tests, classifying each die of the first semiconductor dies as a first good die, a first marginal die, or a first bad die; forming second semiconductor dies in a second wafer; performing second probe tests on the second wafer; based on the second probe tests, classifying each die of the second semiconductor dies as a second good die, a second marginal die, or a second bad die; and bonding the second wafer to the first wafer, each die of the first semiconductor dies aligning with a corresponding die of the second semiconductor dies.