Patents by Inventor Chao-Wen Shih

Chao-Wen Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PACKAGE STRUCTURE
    Publication number: 20230261361
    Abstract: A package structure including a first redistribution circuit structure, a semiconductor die, first antennas and second antennas is provided. The semiconductor die is located on and electrically connected to the first redistribution circuit structure. The first antennas and the second antennas are located over the first redistribution circuit structure and electrically connected to the semiconductor die through the first redistribution circuit structure. A first group of the first antennas are located at a first position, a first group of the second antennas are located at a second position, and the first position is different from the second position in a stacking direction of the first redistribution circuit structure and the semiconductor die.
    Type: Application
    Filed: April 18, 2023
    Publication date: August 17, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Nan-Chin Chuang, Chen-Hua Yu, Chung-Shi Liu, Chao-Wen Shih, Shou-Zen Chang
  • Wafer on wafer bonding structure
    Patent number: 11715723
    Abstract: A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Sung-Feng Yeh
  • Semiconductor device having antenna on chip package and manufacturing method thereof
    Patent number: 11705409
    Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: July 18, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Albert Wan, Ching-Hua Hsieh, Chao-Wen Shih, Han-Ping Pu, Meng-Tse Chen, Sheng-Hsiang Chiu
  • Chip package with antenna element
    Patent number: 11705411
    Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: July 18, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Ping Chiang, Yi-Che Chiang, Nien-Fang Wu, Min-Chien Hsiao, Chao-Wen Shih, Shou-Zen Chang, Chung-Shi Liu, Chen-Hua Yu
  • PACKAGE AND METHOD OF FABRICATING THE SAME
    Publication number: 20230187391
    Abstract: Provided is packages and method of fabricating the same. The package includes a first die, a second die, and an inductor. The second die is bonded to the first die through a bonding structure thereof. The inductor is located in the bonding structure. The inductor includes a spiral pattern parallel to top surfaces of the first die and the second die, and the spiral pattern includes at least a turn.
    Type: Application
    Filed: February 6, 2023
    Publication date: June 15, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Tzuan-Horng Liu, Jen-Li Hu
  • Method for manufacturing a semiconductor device having an interconnect structure over a substrate
    Patent number: 11658069
    Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih
  • Package structure
    Patent number: 11658392
    Abstract: A package structure including a first redistribution circuit structure, a semiconductor die, first antennas and second antennas is provided. The semiconductor die is located on and electrically connected to the first redistribution circuit structure. The first antennas and the second antennas are located over the first redistribution circuit structure and electrically connected to the semiconductor die through the first redistribution circuit structure. A first group of the first antennas are located at a first position, a first group of the second antennas are located at a second position, and the first position is different from the second position in a stacking direction of the first redistribution circuit structure and the semiconductor die.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: May 23, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Nan-Chin Chuang, Chen-Hua Yu, Chung-Shi Liu, Chao-Wen Shih, Shou-Zen Chang
  • PACKAGE HAVING MULTIPLE CHIPS INTEGRATED THEREIN AND MANUFACTURING METHOD THEREOF
    Publication number: 20230116818
    Abstract: A package includes an integrated circuit. The integrated circuit includes a first chip, a dummy chip, a second chip, and a third chip. The first chip includes a semiconductor substrate that extends continuously from an edge of the first chip to another edge of the first chip. The dummy chip is disposed over the first chip and includes a semiconductor substrate that extends continuously from an edge of the dummy chip to another edge of the dummy chip. Sidewalls of the first chip are aligned with sidewalls of the dummy chip. The second chip and the third chip are sandwiched between the first chip and the dummy chip. A thickness of the second chip is substantially equal to a thickness of the third chip.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 13, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • METHOD AND STRUCTURE FOR A BRIDGE INTERCONNECT
    Publication number: 20230095134
    Abstract: Embodiments utilize a bridge die that directly bonds to and bridges two or more device dies. Each of the device dies can have additional device dies stacked thereupon. In some embodiments, the bridge die can bridge device dies disposed both under and over the bridge die. In some embodiments, several bridge dies may be used to bridge a device die to other adjacent device dies.
    Type: Application
    Filed: March 18, 2022
    Publication date: March 30, 2023
    Inventors: Ming-Fa Chen, Min-Chien Hsiao, Chih-Chia Hu, Han-Ping Pu, Ching-Yu Huang, Chen-Sheng Lin, Sung-Feng Yeh, Chao-Wen Shih
  • Integrated Circuit Packages
    Publication number: 20230067035
    Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.
    Type: Application
    Filed: November 10, 2022
    Publication date: March 2, 2023
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih, Sung-Feng Yeh, Nien-Fang Wu
  • Package and method of fabricating the same
    Patent number: 11587894
    Abstract: Provided is packages and methods of fabricating a package and. The method includes bonding a first device die with a second device die. The second device die is over the first device die. A bonding structure is formed in a combined structure including the first and the second device dies. A component is formed in the bonding structure. The component includes a passive device or a transmission line. The method further includes forming a first and a second electrical connectors electrically coupling to a first end and a second end of the component.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: February 21, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Tzuan-Horng Liu, Jen-Li Hu
  • Package having multiple chips integrated therein and manufacturing method thereof
    Patent number: 11562983
    Abstract: A package includes an integrated circuit. The integrated circuit includes a first chip, a second chip, a third chip, and a fourth chip. The second chip and the third chip are disposed side by side on the first chip. The second chip and the third chip are hybrid bonded to the first chip. The fourth chip is fusion bonded to at least one of the second chip and the third chip.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: January 24, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Package structures and methods of fabricating the same
    Patent number: 11552074
    Abstract: A package structure and a method of fabricating the same are provided. The method includes bonding a first die and a second die to a wafer in a first die region of the wafer hybrid bonding; bonding a first dummy structure to the wafer in the first die region and a first scribe line of the wafer; and singulating the wafer and the first dummy structure along the first scribe line to form a stacked integrated circuit (IC) structure.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: January 10, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Simplified Carrier Removable by Reduced Number of CMP Processes
    Publication number: 20220395953
    Abstract: A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.
    Type: Application
    Filed: November 16, 2021
    Publication date: December 15, 2022
    Inventors: Chun-Wei Chang, Ming-Fa Chen, Chao-Wen Shih, Ting-Chu Ko
  • DIE ON DIE BONDING STRUCTURE
    Publication number: 20220384314
    Abstract: A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Sung-Feng Yeh
  • Semiconductor packages and manufacturing methods thereof
    Patent number: 11515618
    Abstract: A semiconductor package includes a semiconductor chip and a redistribution layer structure. The redistribution layer structure is arranged to form an antenna transmitter structure and an antenna receiver structure over the semiconductor chip, wherein patterns of the antenna receiver structure are located at different levels of the redistribution layer structure, and at least one pattern of the antenna transmitter structure is at the same level of the topmost patterns of the antenna receiver structure.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: November 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Ping Chiang, Chao-Wen Shih, Shou-Zen Chang, Albert Wan, Yu-Sheng Hsieh
  • Semiconductor Device and Method
    Publication number: 20220375793
    Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 24, 2022
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih
  • SEMICONDUCTOR PACKAGES AND MANUFACTURING METHODS THEREOF
    Publication number: 20220368005
    Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Ping Chiang, Chao-Wen Shih, Shou-Zen Chang, Albert Wan, Yu-Sheng Hsieh
  • PACKAGE STRUCTURES
    Publication number: 20220367446
    Abstract: A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Integrated circuit package and method
    Patent number: 11502062
    Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: November 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih, Sung-Feng Yeh, Nien-Fang Wu