Abstract: A display apparatus and an fingerprint sensing method thereof are provided. A display panel of the display apparatus has a pixel circuit array, an in-display touch sensor array, and an in-display fingerprint sensor array. A driving circuit drives the in-display fingerprint sensor array to read a fingerprint image. A current display frame period is divided into a plurality of unit periods, each of the unit periods includes at least one fingerprint sensing period and one or both of a display driving period and a touch sensing period. The driving circuit resets a current fingerprint sensor in the in-display fingerprint sensor array during a first fingerprint sensing period among these fingerprint sensing periods of the first display frame period. The driving circuit reads a sensing result of the current fingerprint sensor during a second fingerprint sensing period succeeding to the first fingerprint sensing period.

Abstract: A display apparatus and an fingerprint sensing method thereof are provided. A display panel of the display apparatus has a pixel circuit array, an in-display touch sensor array, and an in-display fingerprint sensor array. A driving circuit drives the in-display fingerprint sensor array to read a fingerprint image. A current display frame period is divided into a plurality of unit periods, each of the unit periods includes at least one fingerprint sensing period and one or both of a display driving period and a touch sensing period. The driving circuit resets a current fingerprint sensor in the in-display fingerprint sensor array during a first fingerprint sensing period among these fingerprint sensing periods of the first display frame period. The driving circuit reads a sensing result of the current fingerprint sensor during a second fingerprint sensing period succeeding to the first fingerprint sensing period.

Abstract: A display apparatus and an fingerprint sensing method thereof are provided. A display panel of the display apparatus has a pixel circuit array, an in-display touch sensor array, and an in-display fingerprint sensor array. A driving circuit drives the in-display fingerprint sensor array to read a fingerprint image. A current display frame period is divided into a plurality of unit periods, each of the unit periods includes at least one fingerprint sensing period and one or both of a display driving period and a touch sensing period. The driving circuit resets a current fingerprint sensor in the in-display fingerprint sensor array during a first fingerprint sensing period among these fingerprint sensing periods of the first display frame period. The driving circuit reads a sensing result of the current fingerprint sensor during a second fingerprint sensing period succeeding to the first fingerprint sensing period.

Abstract: A differential comparator circuit is provided that includes a differential input pair, an active load, a pair of cross voltage generation devices and a pair of switches. The differential input pair has a pair of input terminals and a pair of first connection terminals. The active load has a pair of second connection terminals. The cross voltage generation devices are electrically coupled between the first connection terminals and the second connection terminals, wherein the cross voltage generation devices are configured to be electrically activated to establish a cross voltage therebetween in a reset phase and electrically deactivated to become a short circuit in an operation phase. The switches are configured to electrically couple the pair of input terminals respectively to the pair of first connection terminals in the reset phase and not electrically couple the pair of input terminals respectively from the pair of first connection terminals.

Abstract: An image sensor includes a pixel unit and a pixel readout circuit. The pixel unit includes an image pixel array including a plurality of image pixel columns, respectively; a first reference pixel array including a plurality of first reference pixel columns; and a bias circuit, coupled to the image pixel columns for generating a plurality of column sensing signals, coupled to the first reference pixel columns for generating a plurality of first reference signals, and further for generating a first average reference voltage signal according to the plurality of first reference signals. The pixel readout circuit generates a plurality of reset values and a plurality of sampling values according to the column sensing signals and the first average reference voltage signal, wherein the plurality of reference pixel rows is less than the plurality of image pixel rows.

Abstract: A fixed pattern noise removal method for an image sensor includes steps of calculating each compensation value corresponding to each pixel column according to a plurality of compensation pixel values of the each pixel column; and sampling a plurality of active pixel values in an active pixel area and compensating the plurality of active pixel values according to the each compensation value of the each pixel column, to generate a plurality of compensated active pixel values. A plurality of active pixels sense light to generate the plurality of active pixel values.

Abstract: An image sensor includes a pixel unit and a pixel readout circuit. The pixel unit includes an image pixel array including a plurality of image pixel columns, respectively; a first reference pixel array including a plurality of first reference pixel columns; and a bias circuit, coupled to the image pixel columns for generating a plurality of column sensing signals, coupled to the first reference pixel columns for generating a plurality of first reference signals, and further for generating a first average reference voltage signal according to the plurality of first reference signals. The pixel readout circuit generates a plurality of reset values and a plurality of sampling values according to the column sensing signals and the first average reference voltage signal, wherein the plurality of reference pixel rows is less than the plurality of image pixel rows.

Abstract: A fixed pattern noise removal method for an image sensor includes steps of calculating each compensation value corresponding to each pixel column according to a plurality of compensation pixel values of the each pixel column; and sampling a plurality of active pixel values in an active pixel area and compensating the plurality of active pixel values according to the each compensation value of the each pixel column, to generate a plurality of compensated active pixel values. A plurality of active pixels sense light to generate the plurality of active pixel values.

Abstract: A correlated double sampling device (CDS device) of an image sensor is provided. The CDS device is coupled to a plurality of light-sensing pixels arranged along a first direction. The CDS device of the image sensor includes a regulator and a sampling circuit. The regulator provides the light-sensing pixels with a first voltage so that at least one of the light-sensing pixels provides a first linear current and a second linear current according to the first voltage. The sampling circuit is coupled between a second voltage and the regulator and includes a first sampling unit and a second sampling unit to respectively receive the first linear current for a first duration and the second linear current for a second duration and to respectively and correspondingly output a first sampling signal and a second sampling signal.

Abstract: An image sensor including a pixel array, a sampling circuit and a black level calibration circuit is provided. The pixel array includes a first optical black area, a second optical black area and an active pixel area. The sampling circuit respectively reads first optical black information, second optical black information and active pixel information from the first optical black area, the second optical black area and the active pixel area. The black level calibration circuit determines a black level offset according to the first optical black information, and determines a black level calibration value for calibrating the active pixel information.

Abstract: An image sensor including a pixel array, a sampling circuit and a black level calibration circuit is provided. The pixel array includes a first optical black area, a second optical black area and an active pixel area. The sampling circuit respectively reads first optical black information, second optical black information and active pixel information from the first optical black area, the second optical black area and the active pixel area. The black level calibration circuit determines a black level offset according to the first optical black information, and determines a black level calibration value for calibrating the active pixel information.

Abstract: A correlated double sampling device (CDS device) of an image sensor is provided. The CDS device is coupled to a plurality of light-sensing pixels arranged along a first direction. The CDS device of the image sensor includes a regulator and a sampling circuit. The regulator provides the light-sensing pixels with a first voltage so that at least one of the light-sensing pixels provides a first linear current and a second linear current according to the first voltage. The sampling circuit is coupled between a second voltage and the regulator and includes a first sampling unit and a second sampling unit to respectively receive the first linear current for a first duration and the second linear current for a second duration and to respectively and correspondingly output a first sampling signal and a second sampling signal.

Abstract: In a process for producing a TFT display, a polysilicon layer is patterned to define a first and a second TFT regions. A first doping material is implanted into a first exposed portion in the first TFT region to define a first doped region and a first channel region, and implanted into a second exposed portion in the second TFT region to define a second doped region and a second channel region. A second doping material is implanted into a third exposed portion smaller than the first exposed portion to form first source/drain regions and simultaneously define a first LDD region in the first TFT region. A first and a second gate structures are formed over the first and the second channel regions, respectively. In a certain direction, the first gate structure is longer than the first channel, and the second gate structure isn't longer than the second channel region.

Abstract: An image sticking elimination circuit is provided for an abnormal power-off of a display unit. The image sticking elimination circuit comprises: a charge storage device and an isolation device. The isolation device being turned on when the abnormal power-off of a display occurs; wherein the charge storage device releases charges stored therein when the isolation device is turned on.

Abstract: A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.

Abstract: A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.

Abstract: In a process for producing a TFT display, a polysilicon layer is patterned to define a first and a second TFT regions. A first doping material is implanted into a first exposed portion in the first TFT region to define a first doped region and a first channel region, and implanted into a second exposed portion in the second TFT region to define a second doped region and a second channel region. A second doping material is implanted into a third exposed portion smaller than the first exposed portion to form first source/drain regions and simultaneously define a first LDD region in the first TFT region. A first and a second gate structures are formed over the first and the second channel regions, respectively. In a certain direction, the first gate structure is longer than the first channel, and the second gate structure isn't longer than the second channel region.

Abstract: A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a second LDD region and a first channel region between the first and the second LDD regions. The first gate region is disposed over the first channel region, and partially or completely overlies the first and the second LDD regions. The active matrix is controlled by the driving circuit and comprises a second thin film transistor structure. The second thin film transistor structure includes a second gate, source and drain regions, a third LDD region, a fourth LDD region and a second channel region between the third and the fourth LDD regions. The second gate region is disposed over the second channel region and substantially overlaps with neither of the first and the second LDD regions.

Abstract: A non-destructive contact test method and apparatus for testing an electric characteristic of a test object is provided. The method includes providing an apparatus having a conductor, wherein the conductor is in a liquid state; and using the conductor to contact a surface of the test object for testing the electric characteristic of the test object. Thus, damage to the test object during the test can be effectively avoided.

Abstract: A process for producing an active matrix organic light-emitting diode (AMOLED) display is provided. The process includes steps of providing a substrate; forming an active matrix structure having a first semiconductor layer on the substrate; and forming a driving circuit structure having a second semiconductor layer on the substrate wherein the grain size of the second semiconductor layer is larger than that of the first semiconductor layer. The planar display with improved uniform luminance generated from the process is also provided. It includes the substrate; the active matrix structure having the first semiconductor layer with smaller grain size; and the driving circuit structure having the second semiconductor with larger grain size.