Abstract: An image sticking elimination circuit is provided for an abnormal power-off of a display unit. The image sticking elimination circuit comprises: a charge storage device and an isolation device. The isolation device being turned on when the abnormal power-off of a display occurs; wherein the charge storage device releases charges stored therein when the isolation device is turned on.

Abstract: A non-destructive contact test method for testing an electric characteristic of a test object is provided. The method includes providing an apparatus having a conductor, wherein the conductor is in a liquid state; and using the conductor to contact a surface of the test object for testing the electric characteristic of the test object. Thus, damage to the test object during the test can be effectively avoided.

Abstract: The present invention provides a thin film transistor circuit having high aperture ratio. The circuit includes a first thin film transistor, a data line, and an adjusting capacitor. The first thin film transistor includes a semiconductor layer and a gate electrode. The semiconductor layer includes a drain region and a source region. The data line is connected to the source region of the first thin film transistor. The adjusting capacitor includes a first electrode plate connected to the drain region of the first thin film transistor. And the adjusting capacitor is covered by the data line.

Abstract: A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a second LDD region and a first channel region between the first and the second LDD regions. The first gate region is disposed over the first channel region, and partially or completely overlies the first and the second LDD regions. The active matrix is controlled by the driving circuit and comprises a second thin film transistor structure. The second thin film transistor structure includes a second gate, source and drain regions, a third LDD region, a fourth LDD region and a second channel region between the third and the fourth LDD regions. The second gate region is disposed over the second channel region and substantially overlaps with neither of the first and the second LDD regions.

Abstract: A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.

Abstract: A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.